Title:
PLASMA PROCESSING DEVICE AND ENDPOINT DETECTION METHOD
Document Type and Number:
WIPO Patent Application WO/2024/019020
Kind Code:
A1
Abstract:
According to the present invention, a mounting base for mounting a substrate is provided inside a chamber. An electrode is disposed inside the chamber. The electrode or a wire connected to the electrode is fitted with a measurement unit to measure voltage or current. A gas supply unit supplies the interior of the chamber with a gas for plasma conversion. A power supply supplies the chamber with a cyclic power for converting the gas supplied into the chamber into a plasma, the power having a power level that varies in each period in one cycle. A detection unit detects the endpoint of first etching on the basis of at least one of a voltage, a current, and a phase difference between the voltage and the current that are measured by the measurement unit at a first timing in one cycle of the cyclic power. The detection unit detects the endpoint of second etching on the basis of at least one of a voltage, a current, and a phase difference between the voltage and the current that are measured by the measurement unit at a second timing different from the first timing in one cycle.
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Inventors:
HAYASHI MASAKAZU (JP)
Application Number:
PCT/JP2023/026144
Publication Date:
January 25, 2024
Filing Date:
July 14, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2007531999A | 2007-11-08 | |||
| US5576629A | 1996-11-19 | |||
| JP2004079727A | 2004-03-11 | |||
| JP2001267301A | 2001-09-28 | |||
| JP2021182620A | 2021-11-25 | |||
| JP2022041874A | 2022-03-11 | |||
| JP2022102856A | 2022-07-07 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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