Title:
POWER DEVICE, PREPARATION METHOD THEREFOR, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/005578
Kind Code:
A1
Abstract:
The present application provides a power device, a preparation method therefor, and an electronic apparatus. The power device comprises a GaN buffer layer, a first barrier layer, a second barrier layer, a blocking layer, a first p-(Al)GaN part, and a gate. The GaN buffer layer and the first barrier layer are stacked. The first barrier layer is provided with a first through hole. The second barrier layer covers the side of the first barrier layer distant from the GaN buffer layer. The second barrier layer forms a trench at the first through hole. The blocking layer is provided on the side of the second barrier layer distant from the GaN buffer layer. The blocking layer is provided with a second through hole. The first p-(Al)GaN part is provided in the second through hole, and is in contact with the second barrier layer. The gate is provided on the side of the first p-(Al)GaN part distant from the blocking layer. The blocking layer may protect the second barrier layer when p-(Al)GaN is etched to reduce damage to the second barrier layer by etching, and prevent holes from being injected from the first p-(Al)GaN part to the second barrier layer during reverse conduction.
Inventors:
TANG GAOFEI (CN)
HUANG BONING (CN)
WANG HANXING (CN)
BAO QILONG (CN)
XU YUE (CN)
HUANG BONING (CN)
WANG HANXING (CN)
BAO QILONG (CN)
XU YUE (CN)
Application Number:
PCT/CN2022/102361
Publication Date:
February 02, 2023
Filing Date:
June 29, 2022
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/778; H01L21/335; H01L29/06
Foreign References:
| CN113707718A | 2021-11-26 | |||
| US20160336437A1 | 2016-11-17 | |||
| CN102881715A | 2013-01-16 | |||
| CN112510088A | 2021-03-16 | |||
| CN111463260A | 2020-07-28 |
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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