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Title:
POWER SOURCE PROVIDING CIRCUIT AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2024/026964
Kind Code:
A1
Abstract:
The present disclosure relates to the field of semiconductor circuit design, in particular to a power source providing circuit and a memory. The power source providing circuit comprises: a voltage generation module, which is used for providing an initial voltage signal; a first power source providing module, which is configured to provide a power source reference voltage on the basis of the initial voltage signal; an amplification module, which is configured to generate a first power source voltage on the basis of the power source reference voltage and output same; a first power source network, which is configured to supply power to a functional module connected to the first power source network; and a second power source providing module, which is configured to provide a second power source voltage to a second power source network on the basis of the initial voltage signal, wherein corresponding nodes of the first power source network and the second power source network are connected by means of a voltage control module, and the voltage control module is switched on on the basis of a voltage control signal, so as to pull up the first power source voltage by means of the second power source voltage. A larger power source voltage is provided to improve the driving ability of a corresponding functional module of a memory, thereby increasing the read-write speed of the memory.

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Inventors:
QIN JIANYONG (CN)
Application Number:
PCT/CN2022/116644
Publication Date:
February 08, 2024
Filing Date:
September 01, 2022
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H02J7/00
Foreign References:
CN112332478A2021-02-05
CN113066779A2021-07-02
US6380720B12002-04-30
US20210119547A12021-04-22
CN202210935721A2022-08-04
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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