REFLECTIVE MASK BLANK, REFLECTIVE MASK, REFLECTIVE MASK BLANK MANUFACTURING METHOD, AND REFLECTIVE MASK MANUFACTURING METHOD

WIPO Patent Application WO/2024/009809

A1

This reflective mask blank has, in the following order, a substrate, a multilayer reflective film that reflects EUV light, a protective film that protects the multilayer reflective film, and a phase shift film that shifts the phase of the EUV light. The phase shift film includes Ir as the main material component, has a ratio (Ip/Ia) of the peak intensity maximum value Ip in the 2θ range from 35° to 45° to the average intensity value Ia in the 2θ range from 55° to 60° of 1.0 to 30 as determined by XRD with CuKα rays, has a refractive index n for the EUV light of 0.925 or less, and has an extinction coefficient k for the EUV light of 0.030 or more.

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NAGATA YUYA (JP)
AKAGI DAIJIRO (JP)
SASAKI KENICHI (JP)
IWAOKA HIROAKI (JP)

PCT/JP2023/023323

January 11, 2024

June 23, 2023

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AGC INC (JP)

G03F1/24; C23C14/04; C23C14/06; C23C14/34

WO2022138360A1

2022-06-30

JP2022024617A

2022-02-09

ITOH, Tadashige et al. (JP)

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