REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK

WIPO Patent Application WO/2022/149530

A1

The present invention provides a reflective photomask blank and a reflective photomask that have high interlayer adhesion between a capping layer and a low-reflection layer, and suppress or reduce a projection effect in a reflective photomask for patterning transfer in which light with a wavelength in the extreme UV range is used as a light source. A reflective photomask blank (10) according to the present embodiment comprises a substrate (1), a reflection section (5), and a low-reflection section (4). The reflection section (5) comprises a multilayered reflection film (2) and a capping layer (3). The capping layer (3) includes Ru. The low-reflection section (4) includes 40 at% or more of a material selected from Ag, Co, In, Pt, Sn, Ni, Te, and compounds thereof, and in a region that is at a thickness of 2 nm from the capping layer (3) side of the low-reflection section (4), includes 25 at% or more of a material belonging to a first material group, or includes 30 at% or more of a material belonging to a second material group. The total film thickness of the low-reflection section (4) is 45 nm or less.

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YAMAGATA YUTO (JP)
GODA AYUMI (JP)
NAKANO HIDEAKI (JP)
ICHIKAWA KENJIRO (JP)

PCT/JP2021/048633

July 14, 2022

December 27, 2021

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TOPPAN PHOTOMASK CO LTD (JP)

G03F1/24

WO2019009211A1

2019-01-10

JP2020197606A	2020-12-10
US20190146331A1	2019-05-16
JP2011035104A	2011-02-17
JP2008118143A	2008-05-22

HIROSE Hajime et al. (JP)

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