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Title:
RESIST PATTERN FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/130872
Kind Code:
A1
Abstract:
The purpose of the present invention is to form a resist pattern with sufficient clarity using a resist composition that includes a polymer, said resist composition being able to suppress the occurrence of resist pattern collapse when used as a main-chain scission positive resist. This resist pattern forming method is characterized by including: a step in which a resist film is formed using a positive resist composition that includes a polymer, said polymer having a monomer unit (A) expressed by general formula (1) and a monomer unit (B) expressed by general formula (2), at least one of said monomer unit (A) and said monomer unit (B) having one or more fluorine atoms; an exposure step; and a development step, wherein the development is performed using a developing fluid with a surface tension of 17mN/m or less.

Inventors:
HOSHINO MANABU (JP)
Application Number:
PCT/JP2017/002029
Publication Date:
August 03, 2017
Filing Date:
January 20, 2017
Export Citation:
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Assignee:
ZEON CORP (JP)
International Classes:
G03F7/039; G03F7/20; G03F7/32; H01L21/027
Domestic Patent References:
WO2013145695A12013-10-03
Foreign References:
JP2011215243A2011-10-27
JPS57118243A1982-07-23
JPS5949536A1984-03-22
JPH02115852A1990-04-27
JP2013064970A2013-04-11
JPH08203929A1996-08-09
JPS53100774A1978-09-02
JPH083636B21996-01-17
Other References:
See also references of EP 3410209A4
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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