Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/199754
Kind Code:
A1
Abstract:
Provided is a semiconductor device that enables realization of a capacitive element for which the bias dependency of the capacitance value is small, and which has a large capacitance density without reducing the operating voltage. The semiconductor device comprises: a semiconductor substrate; a first capacitive element that is stacked on the semiconductor substrate; and a second capacitive element that is stacked on the side of the first capacitive element opposite to the semiconductor substrate side and that has a characteristic which is the opposite of the bias characteristic of the capacitance value of the first capacitive element. The first capacitive element and the second capacitive element are connected in parallel.
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Inventors:
BAIRO MASAAKI (JP)
Application Number:
PCT/JP2021/005876
Publication Date:
October 07, 2021
Filing Date:
February 17, 2021
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/04; H01L21/3205; H01L21/768; H01L21/8234; H01L23/522; H01L27/00; H01L27/06; H01L27/146; H04N5/369; H04N5/374; H04N5/3745
Foreign References:
| JP2007208101A | 2007-08-16 | |||
| JP2013143446A | 2013-07-22 | |||
| JP2016511941A | 2016-04-21 | |||
| JP2006128468A | 2006-05-18 | |||
| JPH04241449A | 1992-08-28 |
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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