Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/124110
Kind Code:
A1
Abstract:
A manufacturing method for a semiconductor device, comprising: providing a semiconductor substrate (100), and forming a shallow trench isolation structure (104) in the semiconductor substrate (100); forming a gate structure comprising a gate oxidation layer (105a) and a gate material layer (105b) that are stacked from the bottom up on the semiconductor substrate (100); executing first ion implantation so as to form first doping ions in the gate material layer (105b); and executing second ion implantation (109) so as to form second doping ions at the part of the gate material layer (105b) that is located over a top corner of the shallow trench isolation structure (104), the second doping ions and the first doping ions being opposite in conduction type.
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Inventors:
LI WEI (CN)
HAO LONG (CN)
JIN YAN (CN)
HAO LONG (CN)
JIN YAN (CN)
Application Number:
PCT/CN2016/072743
Publication Date:
August 11, 2016
Filing Date:
January 29, 2016
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB1 CO LTD (CN)
International Classes:
H01L21/265; H01L21/28; H01L21/336; H01L29/423; H01L29/78
Foreign References:
| CN101197288A | 2008-06-11 | |||
| CN102087990A | 2011-06-08 | |||
| US20100320529A1 | 2010-12-23 | |||
| JP2004281504A | 2004-10-07 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
广州华进联合专利商标代理有限公司 (CN)
广州华进联合专利商标代理有限公司 (CN)
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