SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Title:

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2022/042018

Kind Code:

A1

Abstract:

A semiconductor device and a manufacturing method therefor. The semiconductor device comprises a substrate (1), a semiconductor structure (2), an insulation layer (3), and an electrically conductive layer (4). The semiconductor structure (2) is located at one side of the substrate (1), and comprises a first semiconductor structure (21) and a second semiconductor structure (22). The first semiconductor structure (21) and the second semiconductor structure (22) form a PN junction (23). The insulation layer (3) is located at one side of the semiconductor structure (2) facing away from the substrate (1). The electrically conductive layer (4) is located at one side of the insulation layer (3) facing away from the substrate (1). An orthographic projection of the electrically conductive layer (4) on the substrate (1) at least partially overlaps with an orthographic projection of the PN junction (23) on the substrate (1). The electrically conductive layer (4) is used to reduce a barrier of the PN junction (23) formed from the first semiconductor structure (21) and the second semiconductor structure (22), thereby increasing the current density of the PN junction (23) at the same voltage.

Inventors:

WANG LIANHONG (CN)
PING ERXUAN (CN)

Application Number:

PCT/CN2021/103782

Publication Date:

March 03, 2022

Filing Date:

June 30, 2021

Export Citation:

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Assignee:

CHANGXIN MEMORY TECH INC (CN)

International Classes:

H01L29/861; H01L21/329; H01L29/49

Foreign References:

CN102195623A	2011-09-21
CN108336082A	2018-07-27
CN111326589A	2020-06-23
US20090168492A1	2009-07-02

Other References: