Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/040864
Kind Code:
A1
Abstract:
A semiconductor device and a method for manufacturing same. The method comprises: step 1, providing a semiconductor substrate (100), forming a source, a drain, and a gate (101) on the semiconductor substrate (100), and forming a drift region on the semiconductor substrate (100) between the gate (101) and the drain; step 2, forming a first dielectric layer (1031) to cover the surface of the semiconductor substrate (100) as well as the source, the drain, and the gate (101); and step 3, forming a first field plate layer (1041) on the first dielectric layer (1031), the first field plate layer (1041) being located at least in part above the drift region and adjacent to one side of the gate (101).
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Inventors:
LUO ZEHUANG (CN)
Application Number:
PCT/CN2017/096593
Publication Date:
March 08, 2018
Filing Date:
August 09, 2017
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L29/78
Foreign References:
| CN104882409A | 2015-09-02 | |||
| CN204118076U | 2015-01-21 | |||
| CN105742365A | 2016-07-06 | |||
| EP2665101A1 | 2013-11-20 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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