Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/157626
Kind Code:
A1
Abstract:
A semiconductor device according to the present invention comprises: a semiconductor layer; a first wiring line and a second wiring line, which are formed on the semiconductor layer; an insulating layer that has a first opening from which a part of the first wiring line is exposed and a second opening from which a part of the second wiring line is exposed; a first electrode; and a second electrode. The first electrode is formed so as to extend across the first wiring line and the insulating layer, and has a first edge that is arranged on the insulating layer. The second electrode is formed so as to extend across the second wiring line and the insulating layer, and has a second edge that is arranged on the insulating layer. The insulating layer comprises an intervening part that intervenes between the first edge and the second edge, which face each other. The intervening part is provided with a groove that is recessed from the upper surface of the intervening part toward the semiconductor layer. The groove extends along at least one of the first edge and the second edge.
Inventors:
YOSHIDA KAZUKI (JP)
Application Number:
PCT/JP2023/002870
Publication Date:
August 24, 2023
Filing Date:
January 30, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L21/3205; H01L21/768; H01L23/522; H01L23/532
Domestic Patent References:
| WO2016194419A1 | 2016-12-08 | |||
| WO2016170706A1 | 2016-10-27 |
Foreign References:
| JP2018073968A | 2018-05-10 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
Download PDF:
Previous Patent: METHOD FOR PRODUCING GLASS SHEET
Next Patent: COMPARATOR, LIGHT DETECTION ELEMENT, AND ELECTRONIC APPARATUS
Next Patent: COMPARATOR, LIGHT DETECTION ELEMENT, AND ELECTRONIC APPARATUS