Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/189754
Kind Code:
A1
Abstract:
This semiconductor device comprises: a chip having a first surface on one side and a second surface on the other side; a plurality of IGBT regions provided on the chip so as to be spaced apart from each other; a boundary region provided on the chip in an region between the plurality of IGBT regions; a first electroconductive-type cathode region formed in the boundary region, in a surface layer section of the second surface; and a second electroconductive-type well region formed in the boundary region, in a surface layer section of the first surface.
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Inventors:
AONO MASAKI (JP)
NOCHIDA ATSUSHI (JP)
NOCHIDA ATSUSHI (JP)
Application Number:
PCT/JP2023/010676
Publication Date:
October 05, 2023
Filing Date:
March 17, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L29/06; H01L29/12; H01L29/739; H01L29/861; H01L29/868
Foreign References:
| JP2017147435A | 2017-08-24 | |||
| JP2016197678A | 2016-11-24 | |||
| JP2021192447A | 2021-12-16 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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