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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/042404
Kind Code:
A1
Abstract:
Provided is a novel semiconductor device. A vertical channel transistor is provided overlapping a capacitive element. A ferroelectric body is used as a dielectric layer of the capacitive element. It is preferable that the ferroelectric body contains hafnium, zirconium, or at least one element that is selected from among group 13 to 15 elements. Using an oxide semiconductor for a semiconductor layer of the vertical channel transistor makes it possible to raise the dielectric breakdown voltage between the source and drain and to reduce the channel length.

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Inventors:
YAMAZAKI SHUNPEI (JP)
KUNITAKE HITOSHI (JP)
MATSUZAKI TAKANORI (JP)
Application Number:
PCT/IB2023/057887
Publication Date:
February 29, 2024
Filing Date:
August 04, 2023
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H10B53/30; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/786; H10B53/20
Domestic Patent References:
WO2022043825A12022-03-03
Foreign References:
JP2022049605A2022-03-29
JP2016149552A2016-08-18
JP2016131253A2016-07-21
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