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Title:
SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2013/012050
Kind Code:
A1
Abstract:
Provided is a semiconductor element in which atomic interdiffusion between a semiconductor region and an electrode is suppressed and increase in the interface resistance is suppressed even in cases where the semiconductor element is exposed to high temperatures during the production processes or the like. A semiconductor element of the present invention is provided with: a semiconductor region that contains silicon; an electrode that contains aluminum; and a diffusion preventing layer that is interposed between the semiconductor region and the electrode and contains germanium. The germanium content in at least a part of the diffusion preventing layer is 4 at% or more.

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Inventors:
MAEDA TAKEAKI
OKUNO HIROYUKI
YOKOTA YOSHIHIRO
Application Number:
PCT/JP2012/068383
Publication Date:
January 24, 2013
Filing Date:
July 19, 2012
Export Citation:
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Assignee:
KOBE STEEL LTD (JP)
MAEDA TAKEAKI
OKUNO HIROYUKI
YOKOTA YOSHIHIRO
International Classes:
H01L21/28
Foreign References:
JPS6276550A1987-04-08
JPH0423319A1992-01-27
JP2010238800A2010-10-21
JP2011035153A2011-02-17
JP2003142581A2003-05-16
JPH04280424A1992-10-06
JP2007242699A2007-09-20
JP2008010801A2008-01-17
Other References:
See also references of EP 2741318A4
Attorney, Agent or Firm:
HAMADA Yuriko et al. (JP)
Yuriko Hamada (JP)
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Claims:



 
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