Title:
SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2021/085437
Kind Code:
A1
Abstract:
Provided is a semiconductor integrated circuit comprising a substrate of a first conductivity type, a buried insulating film provided on the substrate, an active layer of a first conductivity type provided on the buried insulating film, a first impurity region of a second conductivity type formed in the active layer, a field relaxation layer of a second conductivity type formed in the active layer surrounding the first impurity region, a second impurity region of a first conductivity type formed in the active layer surrounding the field relaxation layer, and a groove formed surrounding the second impurity region and reaching the buried insulating film.
Inventors:
SHIMA KENGO (JP)
KATAOKA YOSHIKAZU (JP)
ADACHI KAZUYA (JP)
HAKAMATA YUTO (JP)
KATAOKA YOSHIKAZU (JP)
ADACHI KAZUYA (JP)
HAKAMATA YUTO (JP)
Application Number:
PCT/JP2020/040320
Publication Date:
May 06, 2021
Filing Date:
October 27, 2020
Export Citation:
Assignee:
TOKAI RIKA CO LTD (JP)
International Classes:
H01L29/06; H01L21/329; H01L29/861; H01L29/868; H01L29/87
Foreign References:
| JPH05136436A | 1993-06-01 | |||
| JPH01103851A | 1989-04-20 | |||
| JP2013084903A | 2013-05-09 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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