SEMICONDUCTOR PORCELAIN COMPOSITION AND PROCESS FOR PRODUCING THE SAME

Title:

SEMICONDUCTOR PORCELAIN COMPOSITION AND PROCESS FOR PRODUCING THE SAME

Document Type and Number:

WIPO Patent Application WO/2006/118274

Kind Code:

A1

Abstract:

[PROBLEMS] To provide a semiconductor porcelain composition having the Ba of BaTiO₃ partially replaced by Bi-Na so as to be able to suppress evaporation of Bi during calcining operation, suppress hetero-phase formation through prevention of Bi-Na composition deviance, lower resistivity at room temperature and suppress fluctuation of Curie temperature, and provide a relevant process for producing the same. [MEANS FOR SOLVING PROBLEMS] (BaQ)TiO₃(Q is a semiconducting element) calcined powder and (BiNa)TiO₃ calcined powder are separately provided. (BaQ)TiO₃ composition and (BiNa)TiO₃ composition are calcined at optimum temperatures suiting the respective compositions, at relatively high temperature for the former and relatively low temperature for the latter. Thus, evaporation of Bi can be suppressed, and Bi-Na composition deviance can be prevented to thereby suppress any hetero-phase formation. Further, through mixing of the calcined powders and subsequent molding/sintering, there can be obtained a semiconductor porcelain composition that is low in resistivity at room temperature and realizes suppressing of Curie temperature fluctuation.

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Inventors:

SHLMADA TAKESHI (JP)
TERAO KOICHI (JP)
TOJI KAZUYA (JP)

Application Number:

PCT/JP2006/309038

Publication Date:

November 09, 2006

Filing Date:

April 28, 2006

Export Citation:

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Assignee:

NEOMAX CO LTD (JP)
SHLMADA TAKESHI (JP)
TERAO KOICHI (JP)
TOJI KAZUYA (JP)

International Classes:

C04B35/468; H01C7/02

Foreign References:

JPS56169301A	1981-12-26
JPS5058106A	1975-05-20
JP2005255493A	2005-09-22

Other References: