Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2022/078004
Kind Code:
A1
Abstract:
A semiconductor structure and a manufacturing method therefor, and a memory. The semiconductor structure comprises: a substrate (10), the substrate (10) internally comprising a plurality of active regions, which are arranged in an array; buried word lines (20) located in the substrate (10), with each active region intersecting two buried word lines (20); trenches, which are located in the upper surface of the substrate (10) and between the two buried word lines (20) in each active region; bit line contact layers (31) filling the trenches; an insulating layer (32) distributed between two trenches, with the thickness of the upper surface of the insulating layer (32) relative to the upper surface of the substrate (10) being less than the thickness of the upper surface of the bit line contact layer (31) relative to the upper surface of the substrate (10); and bit line conductive layers (40, 60) covering the bit line contact layers (31) and the insulating layer (32).
More Like This:
Inventors:
LIU CHIH-CHENG (CN)
Application Number:
PCT/CN2021/109353
Publication Date:
April 21, 2022
Filing Date:
July 29, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
| CN111640746A | 2020-09-08 | |||
| CN109979940A | 2019-07-05 | |||
| CN111640759A | 2020-09-08 | |||
| CN110890369A | 2020-03-17 | |||
| US20130256904A1 | 2013-10-03 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
Download PDF: