Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/040644
Kind Code:
A1
Abstract:
The embodiments of the present disclosure relate to the technical field of semiconductors, and provide a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate; the substrate comprising a first doped region, and a second doped region surrounding the first doped region; the doping type of the first doped region is different from the doping type of the second doped region; and the first doped region and the second doped region jointly form a photodiode; wherein the second doped region comprises a bottom part, a middle part and a top part, the doping concentration of the middle part being smaller than the doping concentration of the bottom part and the doping concentration of the top part. The embodiments of the present disclosure at least help improve the problem of photon-generated carrier retention when a photodiode performs photon-generated carrier transmission, and the use of the second doped region surrounding the first doped region reduces the leakage current of the photodiode, thereby helping to improve the performance of the photodiode, and optimize the low-light imaging performance of the semiconductor structure.
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Inventors:
LIU CHIH-CHENG (CN)
Application Number:
PCT/CN2022/118570
Publication Date:
February 29, 2024
Filing Date:
September 13, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/146
Foreign References:
| CN204391115U | 2015-06-10 | |||
| CN103022069A | 2013-04-03 | |||
| US20210098524A1 | 2021-04-01 | |||
| CN103000645A | 2013-03-27 | |||
| CN101720510A | 2010-06-02 | |||
| CN111509074A | 2020-08-07 | |||
| CN107004709A | 2017-08-01 | |||
| CN108110039A | 2018-06-01 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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