Title:
SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY
Document Type and Number:
WIPO Patent Application WO/2024/000640
Kind Code:
A1
Abstract:
Provided in the present disclosure are a sense amplifier and a semiconductor memory. The sense amplifier comprises a control module provided with an input end and an output end and an amplification module. The control module is configured to acquire temperature data of the amplification module, perform pulse width adjustment on a first offset cancellation signal received at the input end thereof according to the temperature data of the amplification module, and generate and output a second offset cancellation signal. The amplification module has a control end connected to the output end of the control module, and is configured to cancel a noise signal of the amplification module under the control of the second offset cancellation signal. The above arrangement can compensate for the defect that a transistor in the amplification module changes with a change in the temperature, such that a complementary voltage of an appropriate magnitude is generated on a bit line and a complementary bit line, thereby accurately cancelling a noise signal in the amplification module, and improving the accuracy of the sense amplifier.
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Inventors:
SU HSIN-CHENG (CN)
LEE JUNGHWA (CN)
LEE JUNGHWA (CN)
Application Number:
PCT/CN2022/105038
Publication Date:
January 04, 2024
Filing Date:
July 12, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C7/06; G11C7/04; G11C7/08
Foreign References:
| CN112992200A | 2021-06-18 | |||
| CN101908369A | 2010-12-08 | |||
| CN104934058A | 2015-09-23 | |||
| CN106057231A | 2016-10-26 | |||
| CN112767975A | 2021-05-07 | |||
| US5303191A | 1994-04-12 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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