SIC EPITAXIAL WAFER PRODUCTION METHOD - MITSUBISHI ELECTRIC CORP

Title:

SIC EPITAXIAL WAFER PRODUCTION METHOD

Document Type and Number:

WIPO Patent Application WO/2014/125550

Kind Code:

A1

Abstract:

Provided is a SiC epitaxial wafer production method with which, when inducing SiC epitaxial growth at a first temperature and a second temperature, the formation of surface imperfections during temperature increase, such as step bunching, can be inhibited. The present invention is provided with: a first step in which a Si supply gas and a C supply gas are supplied to a top of a SiC bulk substrate having, as a main surface thereof, 4H-SiC(0001) having an off angle of less than 5˚, and first epitaxial growth is induced at a first temperature in the range of 1480˚C to 1530˚C inclusive; a second step in which supply of the Si supply gas and the C supply gas is stopped, and the temperature of the SiC bulk substrate is increased from the first temperature to a second temperature; and a third step in which the Si supply gas and the C supply gas are supplied to the top of the SiC bulk substrate having had the temperature thereof increased in the second step, and second epitaxial growth is induced at the second temperature.

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Inventors:

TOMITA NOBUYUKI (JP)
MITANI YOICHIRO (JP)
TANAKA TAKANORI (JP)
KAWABATA NAOYUKI (JP)
TOYODA YOSHIHIKO (JP)
KUROIWA TAKEHARU (JP)
HAMANO KENICHI (JP)
ONO AKIHITO (JP)
OCHI JUNJI (JP)
KAWAZU ZEMPEI (JP)

Application Number:

PCT/JP2013/007619

Publication Date:

August 21, 2014

Filing Date:

December 26, 2013

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP (JP)

International Classes:

H01L21/205; C30B29/36

Domestic Patent References:

WO2010101016A1

2010-09-10

Foreign References:

JP2007131504A	2007-05-31
JP2009218575A	2009-09-24
JP2007284298A	2007-11-01
JP2006228763A	2006-08-31

Other References:

S. LEONE ET AL.: "Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates", JOURNAL OF CRYSTAL GROWTH, vol. 311, no. 12, pages 3265 - 3272

Attorney, Agent or Firm:

TAKAHASHI, Shogo et al. (JP)
Shogo Takahashi (JP)

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