Title:
SIC SINGLE CRYSTAL WAFER AND PROCESS FOR PRODUCTION THEREOF
Document Type and Number:
WIPO Patent Application WO/2011/024931
Kind Code:
A1
Abstract:
Disclosed is an SiC single crystal wafer on which a good-quality epitaxial film having reduced defects originated from a wafer can be grown. The SiC single crystal wafer has a surface-modified layer having a thickness of 50 nm or less and an SiC single crystal part having an oxygen content of 1.0 × 1017 atoms/cm3 or less. The SiC single crystal wafer is produced from high-purity SiC bulk single crystals which are produced by a solution growth method using a raw material having an oxygen content of 100 ppm or less and employing a non-oxidative atmosphere having an oxygen concentration of 100 ppm or less.
Inventors:
KUSUNOKI KAZUHIKO (JP)
KAMEI KAZUHITO (JP)
YASHIRO NOBUYOSHI (JP)
KOIKE JUNICHI (JP)
KAMEI KAZUHITO (JP)
YASHIRO NOBUYOSHI (JP)
KOIKE JUNICHI (JP)
Application Number:
PCT/JP2010/064549
Publication Date:
March 03, 2011
Filing Date:
August 27, 2010
Export Citation:
Assignee:
SUMITOMO METAL IND (JP)
KUSUNOKI KAZUHIKO (JP)
KAMEI KAZUHITO (JP)
YASHIRO NOBUYOSHI (JP)
KOIKE JUNICHI (JP)
KUSUNOKI KAZUHIKO (JP)
KAMEI KAZUHITO (JP)
YASHIRO NOBUYOSHI (JP)
KOIKE JUNICHI (JP)
International Classes:
C30B29/36; C30B19/04; H01L21/02
Foreign References:
| JP2008110907A | 2008-05-15 | |||
| JP2008159740A | 2008-07-10 | |||
| JPH01298100A | 1989-12-01 | |||
| JP2005126248A | 2005-05-19 |
Other References:
H.M.HOBGOOD ET AL: "Large diameter 6H-SiC for microwave device applications", JOURNAL OF CRYSTAL GROWTH, vol. 137, no. 1/2, March 1994 (1994-03-01), pages 181 - 186, XP024681365
See also references of EP 2471981A4
See also references of EP 2471981A4
Attorney, Agent or Firm:
HIROSE SHOICHI (JP)
Hirose Shoichi (JP)
Hirose Shoichi (JP)
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