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Title:
SIDE-HEATING TYPE SILICON-BASED THIN FILM CATALYTIC HYDROGEN SENSOR AND PROCESSING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/052392
Kind Code:
A1
Abstract:
A side-heating type silicon-based thin film catalytic hydrogen sensor, which is obtained by means of an MEMS processing technology. The sensor comprises a silicon substrate (1), the upper surface of the silicon substrate (1) is provided with a thermal insulation layer (2), and the lower surface of the silicon substrate (1) is provided with one or a pair of thermal insulation grooves (7) extending to the thermal insulation layer (2); the surface of the thermal insulation layer (2) is provided with a first heating coil (4) and a second heating coil (5) formed by a high-resistance temperature coefficient material, a first catalytic thin film layer (5) and a second catalytic thin film layer (6) are respectively arranged on the inner side, the outer side or the upper side of the two heating coils, the surface of the first catalytic thin film layer (5) is covered with a high-temperature-resistant dielectric layer (9), and the surface of the second catalytic thin-film layer (6) is left empty; and the outer periphery of the thermal insulation layer (2) is provided with a precious metal thin film resistor (10). The hydrogen sensor can work in catalytic combustion and thermal conductivity modes at the same time, and has a small volume, low power consumption, a fast response and a long service life.

Inventors:
SHEN FANGPING (CN)
Application Number:
PCT/CN2021/070618
Publication Date:
March 17, 2022
Filing Date:
January 07, 2021
Export Citation:
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Assignee:
SUZHOU INNOMIC ELECTRONIC TECH CO LTD (CN)
International Classes:
B82Y15/00; G01N25/32; B82Y40/00; G01N27/16
Domestic Patent References:
WO2010084916A12010-07-29
Foreign References:
CN112034005A2020-12-04
CN108313972A2018-07-24
CN110865100A2020-03-06
CN108275649A2018-07-13
CN111443114A2020-07-24
KR20100026810A2010-03-10
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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