Title:
SILICON CARBIDE POWDER, AND PRODUCTION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/162721
Kind Code:
A1
Abstract:
[Problem] To provide a silicon carbide powder in which both Si-based impurities and free carbon are significantly reduced. [Solution] The silicon carbide powder contains at most 0.04 mass% of free carbon, and has a ratio of silicon atoms to carbon atoms (Si/C molar ratio) of 1.00-1.02. The silicon carbide powder can be produced by a method for producing a silicon carbide powder, the method comprising: a combustion synthesis step in which a mixed powder that is a mixture of a metal silicon powder and a carbon powder and has a Si/C molar ratio of 1.00 to 1.02 is preheated at 900-1,300 °C in an inert atmosphere, and then a part of the mixed powder is ignited to perform combustion synthesis, thereby obtaining a crude silicon carbide powder; and a heating step in which the crude silicon carbide powder is heated at 2,000-2,500 °C in an inert atmosphere. Further, the silicon carbide powder can be obtained, without undergoing the heating step, by preheating the mixed powder at 900-1,300 °C under atmospheric pressure in an inert atmosphere, and then igniting a part of the mixed powder to perform combustion synthesis.
Inventors:
FUKUNAGA YUTAKA (JP)
Application Number:
PCT/JP2023/004556
Publication Date:
August 31, 2023
Filing Date:
February 10, 2023
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
C01B32/956
Foreign References:
| CN108752003A | 2018-11-06 | |||
| JP2014122131A | 2014-07-03 | |||
| JPS62167212A | 1987-07-23 | |||
| JPS5325300A | 1978-03-08 | |||
| JPH01119568A | 1989-05-11 | |||
| JPH01103913A | 1989-04-21 | |||
| CN113277515A | 2021-08-20 | |||
| JPH07179844A | 1995-07-18 |
Attorney, Agent or Firm:
MAEDA & SUZUKI (JP)
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