Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/034277
Kind Code:
A1
Abstract:
A unit cell (16) is a section between the centers of adjacent source trenches (11), includes two or more gate trenches (7) and one source trench (11), and has four or more channels formed therein. The two or more gate trenches (7) and the one source trench (11) are arranged repeating in an alternating manner in a direction parallel to the obverse surface of a semiconductor substrate (30). The total number of gate trenches (7) is greater than the total number of source trenches (11). The total area of the gate trenches (7) is greater than the total area of the source trenches (11). The width (w1) of the gate trenches (7) is equal to or less than the width (w2) of the source trenches (11). The depth (d2) of the source trenches (11) is equal to or greater than the depth (d1) of the gate trenches (7). A p-type base depth portion (4) of the bottom surfaces of the source trenches (11) relaxes an electric field in the vicinity of the bottom surfaces of the gate trenches (7). As a result, it is possible to reduce on-resistance.
Inventors:
OKUMURA KEIJI (JP)
Application Number:
PCT/JP2023/023685
Publication Date:
February 15, 2024
Filing Date:
June 26, 2023
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L29/06; H01L29/12
Foreign References:
| JP2019071314A | 2019-05-09 | |||
| JP2019161199A | 2019-09-19 | |||
| JP2019220727A | 2019-12-26 | |||
| JP2022080586A | 2022-05-30 | |||
| JP2012165018A | 2012-08-30 | |||
| JP2019068065A | 2019-04-25 |
Attorney, Agent or Firm:
SAKAI, Akinori (JP)
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