Title:
SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC EQUIPMENT
Document Type and Number:
WIPO Patent Application WO/2022/085304
Kind Code:
A1
Abstract:
The present invention improves signal charge transfer. This solid-state imaging device comprises: a first charge storage region and a second charge storage region provided apart from each other on a semiconductor layer; and a transfer transistor which transfers the signal charge stored in the first charge storage region to the second charge storage region through a channel formed in the semiconductor layer adjacent to a gate electrode via a gate insulating film. The thickness of the gate insulating film is thinner on the downstream side in the signal charge transfer direction than on the upstream side in the signal charge transfer direction.
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Inventors:
SASAKI KAZUYA (JP)
Application Number:
PCT/JP2021/031767
Publication Date:
April 28, 2022
Filing Date:
August 30, 2021
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/283; H01L21/336; H01L21/8234; H01L27/088; H01L27/146; H01L29/41; H01L29/423; H01L29/49; H01L29/78; H04N5/374
Domestic Patent References:
| WO2020045142A1 | 2020-03-05 |
Foreign References:
| JP2008227263A | 2008-09-25 | |||
| JPS507436A | 1975-01-25 | |||
| JP2005183835A | 2005-07-07 | |||
| JP2007134633A | 2007-05-31 | |||
| JP2012169433A | 2012-09-06 |
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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