SUBSTRATE PROCESSING DEVICE, PLASMA GENERATION DEVICE, SEMICONDUCTOR DEVICE PRODUCTION METHOD, AND PROGRAM

Title:

SUBSTRATE PROCESSING DEVICE, PLASMA GENERATION DEVICE, SEMICONDUCTOR DEVICE PRODUCTION METHOD, AND PROGRAM

Document Type and Number:

WIPO Patent Application WO/2021/044504

Kind Code:

A1

Abstract:

Provided is a technology that enables reduction of variation in substrate processing performance with respect to a plurality of substrates. The technology provided herein is equipped with: a reaction tube that has a processing chamber for processing a substrate and a buffer chamber for forming plasma; and a heating device for heating the reaction tube. The buffer chamber is equipped with: at least two application electrodes of different lengths to which high-frequency electric power is applied; a reference electrode to which a reference potential is imparted; and an electrode protective tube which provides protection for the application electrodes and the reference electrode.

More Like This:

JP6749258	Microwave plasma source, microwave plasma processing equipment, and plasma processing method
JPS59224118	PHOTOCHEMICAL VAPOR-PHASE REACTION METHOD
JP5337376	Monolayer deposition method and equipment

Inventors:

TAKEDA TSUYOSHI (JP)
HARA DAISUKE (JP)

Application Number:

PCT/JP2019/034502

Publication Date:

March 11, 2021

Filing Date:

September 02, 2019

Export Citation:

Click for automatic bibliography generation Help

Assignee:

KOKUSAI ELECTRIC CORP (JP)

International Classes:

H01L21/31

Domestic Patent References:

WO2018016131A1

2018-01-25

Foreign References:

JP2012094652A	2012-05-17
JP2010283331A	2010-12-16
JP2016213033A	2016-12-15
JP2014146805A	2014-08-14
JP2014038923A	2014-02-27

Attorney, Agent or Firm:

POLAIRE I.P.C. (JP)

Download PDF:

View/Download PDF PDF Help

Previous Patent: SLIDE MECHANISM, FIXED DIE, MOVABLE DIE, AND MOLD FOR FORMING

Next Patent: OBJECT TRANSFER APPARATUS AND PROCESSING SYSTEM