SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, REFLECTIVE MASK FOR EUV LITHOGRAPHY, METHOD FOR PRODUCING REFLECTIVE MASK FOR EUV LITHOGRAPHY, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Title:

Document Type and Number:

WIPO Patent Application WO/2015/037564

Kind Code:

A1

Abstract:

The purpose of the present invention is to provide a substrate with a multilayer reflective film, which provides a reflective mask achieving high reflectance and excellent cleaning resistance. The present invention is a substrate with a multilayer reflective film, which comprises: a substrate (12); a multilayer reflective film (14) that is formed on the substrate (12) by periodically laminating a plurality of layers containing Si that serves as a high refractive index material and a plurality of layers containing a low refractive index material; and an Ru-based protection film (16) that is formed on the multilayer reflective film (14) and protects the multilayer reflective film (14). A surface layer of the multilayer reflective film (14), said surface layer being on the opposite side of the substrate-side surface, is one of the layers containing Si. In addition, the Ru-based protection film (16) contains an Ru compound that contains Ru and Ti, and the Ru compound contains more Ru than RuTi of the stoichiometric composition.

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Inventors:

ONOUE TAKAHIRO (JP)

Application Number:

PCT/JP2014/073727

Publication Date:

March 19, 2015

Filing Date:

September 09, 2014

Export Citation:

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Assignee:

HOYA CORP (JP)

International Classes:

H01L21/027; G03F1/24; G03F1/48

Domestic Patent References:

WO2012102313A1	2012-08-02
WO2011071126A1	2011-06-16
WO2011068223A1	2011-06-09
WO2011071086A1	2011-06-16
WO2012014904A1	2012-02-02

Foreign References:

JP2005268750A	2005-09-29
JP2007273656A	2007-10-18

Attorney, Agent or Firm:

TSUKUNI & ASSOCIATES et al. (JP)
Patent business corporation Tsukuni (JP)

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