VAPOR DEPOSITION RAW MATERIAL FOR USE IN PRODUCTION OF FILM CONTAINING INDIUM AND AT LEAST ONE ANOTHER METAL, AND METHOD FOR PRODUCING FILM CONTAINING INDIUM AND AT LEAST ONE ANOTHER METAL

Title:

VAPOR DEPOSITION RAW MATERIAL FOR USE IN PRODUCTION OF FILM CONTAINING INDIUM AND AT LEAST ONE ANOTHER METAL, AND METHOD FOR PRODUCING FILM CONTAINING INDIUM AND AT LEAST ONE ANOTHER METAL

Document Type and Number:

WIPO Patent Application WO/2022/118744

Kind Code:

A1

Abstract:

Provided are: a chemical vapor deposition raw material for use in the production of a film containing indium and at least one another metal, which can be stored stably for a long period of time and is easy to handle; and a method for producing the film. A vapor deposition raw material for use in the production of a film containing indium and at least one another metal comprises 100 mol of a compound represented by general formula (1) or (2) and 0.1 mol or more of at least one of compounds respectively represented by general formulae (3) to (6).　(1): In(C5H4R) (2): In(C5(CH3)4R) (3): M1(C5H4R) (4): M2(C5H4R)n (5): M1(C5(CH3)4R) (6): M2(C5(CH3)4R)n (In general formulae (1) to (6), R's independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; in general formulae (3) and (5), M1 represents a metal other than indium ; and in general formulae (4) and (6), M2 represents a metal other than indium and n represents an integer of 2 to 4.)

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Inventors:

TAKAHASHI NOBUTAKA (JP)
MIZUTANI FUMIKAZU (JP)
HIGASHI SHINTARO (JP)

Application Number:

PCT/JP2021/043311

Publication Date:

June 09, 2022

Filing Date:

November 26, 2021

Export Citation:

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Assignee:

KOJUNDO CHEMICAL LABORATORY CO LTD (JP)

International Classes:

C23C16/40

Domestic Patent References:

WO2015145907A1

2015-10-01

Foreign References:

JP2012244168A	2012-12-10
JP2008091470A	2008-04-17
JP2007053186A	2007-03-01
JPS61104079A	1986-05-22

Attorney, Agent or Firm:

KINOSHITA Shigeru (JP)

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