VARIABLE RESISTANCE MEMORY ELEMENT AND FABRICATION METHODS

Title:

VARIABLE RESISTANCE MEMORY ELEMENT AND FABRICATION METHODS

Document Type and Number:

WIPO Patent Application WO/2012/024544

Kind Code:

A3

Abstract:

An electronic device comprises a variable resistance memory element on a substrate. The variable resistance memory element comprises (i) an amorphous carbon layer comprising a hydrogen content of at least about 30 atomic percent, and a maximum leakage current of less than about 1 x 10-9 amps, and (ii) a pair of electrodes about the amorphous carbon layer. Methods of fabricating this and other devices are also described.

More Like This:

JP6005401	A manufacturing method of a semiconductor device
JP3537041	FERROELECTRIC CAPACITOR AND FERROELECTRIC/CMOS INTEGRATED STRUCTURE
JP5639749	Manufacturing method of semiconductor device

Inventors:

CHENG SIU F (US)
PARK HEUNG LAK (US)
PADHI DEENESH (US)

Application Number:

PCT/US2011/048328

Publication Date:

June 07, 2012

Filing Date:

August 18, 2011

Export Citation:

Click for automatic bibliography generation Help

Assignee:

APPLIED MATERIALS INC (US)
CHENG SIU F (US)
PARK HEUNG LAK (US)
PADHI DEENESH (US)

International Classes:

H01L27/115; H01L21/8247; H01L27/10

Foreign References:

US20100181546A1	2010-07-22
US7220982B2	2007-05-22
US20100012914A1	2010-01-21

Attorney, Agent or Firm:

JANAH, Ashok K. (P.C.650 Delancey Street, Suite 10, San Francisco California, US)

Download PDF:

View/Download PDF PDF Help

Previous Patent: CIRCULATING BIOMARKERS FOR DISEASE

Next Patent: HIFU APPLICATOR