| Document |
Document Title |
|
WO/2002/033023A1 |
The present invention provides a chemical-mechanical polishing slurry for use in removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure, and a method of retarding the corrosion of...
|
|
WO/2002/033014A1 |
A method for planarizing or polishing a memory or rigid disk is provided. The method comprises abrading at least a portion of the surface with a polishing system comprising (i) a polishing composition comprising water, an oxidizing agent...
|
|
WO/2002/033015A1 |
A polish composition includes a siloxane polymer of formula (III) wherein each group A independently represents an alkyl group having up to 6 carbon atoms, M represents an alkyl group having up to 6 carbons atoms and Q represents an alky...
|
|
WO/2002/033736A1 |
The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. Tslurry according to the invention includes an agent that suppresses the rate at w...
|
|
WO/2002/031072A1 |
The present invention relates to a CMP (chemical mechanical polishing) slurry composition and a method for planarizing a semiconductor device. The CMP composition comprises fumed silica, tetramethyl ammonium hydroxide, phosphates, fluori...
|
|
WO/2002/026906A1 |
The invention relates to a method for chemical-mechanical polishing of layers made from metal from the platinum group, particularly iridium. The CMP method functions with the aid of an abrasive liquid which contains 1 - 6 wt. % of abrasi...
|
|
WO/2002/024413A2 |
A polishing composition for polishing with a polishing pad to remove a metal layer (5) from a semiconductor wafer (1) having the metal layer (5) and further having recessed metal (5a) in trenches (4), the composition having a concentrati...
|
|
WO/2002/022725A1 |
A novel non-wax superior gloss polishing compound formulation is disclosed. The polishing compound comprises: a) a water repelling and film forming acrylic resin; b) silicone fluids; c) finely divided abrasives; d) a hydrocarbon and alka...
|
|
WO/2002/020682A2 |
The present invention provides a chemical mechanical polishing composition for planarizing copper and a method for planarizing, or initiating the planarization of, copper using the composition. The chemical mechanical polishing compositi...
|
|
WO/2002/020214A2 |
A method for planarizing or polishing a substrate, particularly a memory or rigid disk, is provided. The method comprises abrading at least a portion of a surface of a substrate with a polishing system comprising (i) a polishing composit...
|
|
WO/2002/016526A1 |
Method of making abrasive compositions comprised of water-insoluble abrasive polishing agents suspended in an aqueous medium in combination using wet grinding, and products thereof. The abrasive compositions made by the method contain ap...
|
|
WO/2002/014014A2 |
A method of polishing a wafer in a carrier with a polishing pad by controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or by controlling a first polishing step with a ratio of PS to CS in the range of...
|
|
WO/2002/010256A1 |
The invention relates to mono- or poly-quaternary polysiloxane derivatives, in which two siloxane units are linked to each other by means of amino or ammonium units. The invention further relates to a method of the production thereof and...
|
|
WO/2002/010257A1 |
The invention relates to polyammonium-polysiloxane compounds, a method for the production and use thereof.
|
|
WO/2002/006418A1 |
A polishing fluid composition which attains an improved rate of polishing without causing surface defects on the surface of the work and which is capable of reducing surface roughness; and a method of polishing a substrate. [1] The polis...
|
|
WO/2002/004573A2 |
In accordance with the invention, there is provided a chemical-mechanical polishing slurry for polishing a substrate. The slurry is comprised primarily of abrasive particles and an oxidizing agent, wherein the slurry exhibits a stability...
|
|
WO/2002/002712A1 |
A polishing composition includes at least water, alumina and a sol product derived from an aluminum salt. A magnetic recording disk substrate polished with the polishing composition suppresses formation of roll-off on the outer periphera...
|
|
WO/2002/002706A1 |
Chemical mechanical polishing compositions and slurries comprising a film forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride ...
|
|
WO/2002/002708A1 |
This invention relates to a furniture polish comprising a paraffin wax and a microcrystalline wax, preferably in combination wit beeswax and a silicon oil. An organic solvent and water are present, and there may additionally be a surfact...
|
|
WO/2002/002707A1 |
Polishing compositions comprising at least one soluble silane compound and at least one abrasive that are useful for polishing substrate surface features.
|
|
WO/2001/099170A2 |
An aqueous based ceria slurry system and method for chemical mechanical polishing of semiconductor wafers, the slurry comprising less than 5 wt % abrasive cerium oxide particles and up to about the critical micelle concentration of a cat...
|
|
WO/2001/098379A1 |
The invention relates to solvent-containing pastes having polyolefin wax as a constituent thereof. The polyolefin wax is produced from at least one olefin by means of catalysis with a single-site catalyst on the basis of a complex of a t...
|
|
WO/2001/098201A2 |
A method and system for planarizing or polishing a substrate, particularly a memory or rigid disk, are provided. The method comprises abrading at least a portion of the surface with a polishing sytem comprising (i) a polishing compositio...
|
|
WO/2001/096437A1 |
The invention relates to a lubricating agent containing fluorinated urethane produced by reacting a) compounds of formula (1): R¿f?-X-A-H, wherein R¿f? represents a perfluoroalkyl group with 1 - 20, preferably 4 - 16 C-atoms, X C¿2?-C...
|
|
WO/2001/085868A1 |
ABSTRACT For aluminum disks and glass-made hard disks, those disks having a mean waviness of less than 3 Å are being desired in order to increase the density of memory capacity. The present invention provides polishing compositions that...
|
|
WO/2001/083638A1 |
A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low ...
|
|
WO/2001/081490A2 |
Oxidizing agents are added to slurries of inorganic oxides which have been heated, e.g., autoclaved, to produce abrasive slurries which impart relatively equal polishing rates for conductive metal and insulating layers used to make semic...
|
|
WO/2001/080296A1 |
A polishing compound for polishing semiconductor device containing water, fine particles of an abrasive material and a chelating agent, characterized in that the abrasive material comprises cerium oxide, the cerium oxide particles have a...
|
|
WO/2001/079331A1 |
The present invention relates to microemulsion compositions which can be utilized as coatings to improve the drying rate, protection, and shine of various surfaces, specifically metallic vehicle surfaces. Polyisobutylene, copolymers and ...
|
|
WO/2001/079377A1 |
A composition for use in polishing a magnetic disk substrate which comprises an aqueous medium containing an alkali metal ion, abrasive grains, a carboxylic acid, an oxidizing agent and an antigelling agent. The polishing of a substrate ...
|
|
WO/2001/078128A2 |
Metal CMP with reduced dishing and overpolish insensitivity is achieved with an abrasive-free polishing composition having a pH and oxidation-reduction potential in the domain of passivation of the metal and, therefore, a low static etch...
|
|
WO/2001/078116A2 |
A system, a composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt.% or more of fluoride ions, (b) ...
|
|
WO/2001/077241A2 |
Polishing compositions for metal CMP with reduced dishing and overpolish insensitivity are formulated to have a low static etching rate at high temperatures, e.g., higher than 50 °C. Embodiments include abrasive-free polishing compositi...
|
|
WO/2001/074958A2 |
Slurries containing SiO¿2? are used as a polishing agent for planarizing silicon dioxide layers. It was found that slurries have a higher abrasion rate during the polishing of SiO¿2? layers if the silica sols used have a bimodal partic...
|
|
WO/2001/074959A2 |
A method of planarizing or polishing the surface of a memory or rigid disk comprising abrading at least a portion of the surface with (i) a polishing composition comprising an oxidizing agent selected from the group consisting of persulf...
|
|
WO/2001/064354A2 |
A method for repairing and lustering defects on a hydrophilic coat surface is reported. The method comprises the steps of applying a buffing composition on a hydrophilic coat surface; and buffing the hydrophilic coat surface to which the...
|
|
WO/2001/062440A1 |
A transparent portion of a polishing pad in the solid phase has an index of refraction matched nearly to the index of refraction of a fluid polishing composition for chemical mechanical polishing, which minimizes scattering of an optical...
|
|
WO/2001/060940A1 |
Compounds containing both a sulfur and a nitrogen in a five-membered ring structure are used as biocides in polishing solutions and slurries.
|
|
WO/2001/057919A1 |
A polishing composite for LSI manufacture is provided that, adjusted to pH 5.5-9.0 by alkaline substance, includes water, abrasive, organic acid and oxidizer, so that a barrier metal of Ta or TaN (4) and a copper wiring layer (6) can be ...
|
|
WO/2001/057150A1 |
A polishing composition to remove metal from a dielectric layer by, either single step CMP polishing, or two step CMP polishing, the composition including, an aqueous solution provided with a substance having molecules with respective si...
|
|
WO/2001/055028A1 |
A method for preparing an oxide powder, which comprises holding in a fluidized state a base material powder comprising a first oxide and having an adsorbed water content of 0.1 to 50 %, an average particle size of 0.005 to 0.5 $g(m)m and...
|
|
WO/2001/052618A2 |
A surface stabilized, non-agglomerated silica is provided. The silica is prepared by the method of providing non-agglomerated silica, and then treating the surface of the silica, thereby substantially preventing agglomeration of silica. ...
|
|
WO/2001/049450A1 |
A multi-step polishing process for producing dopant-striation-free semiconductor wafers. The process includes polishing a surface of the wafer using a sodium stabilized colloidal silica slurry, an amine accelerant, and an alkaline etchan...
|
|
WO/2001/048114A1 |
A composition for polishing a magnetic disk substrate containing water, silicon oxide, a metal coordination compound, and an oxidizing agent. The composition may further contain a pH adjusting agent. A magnetic disk substrate polishing m...
|
|
WO/2001/048807A1 |
A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that...
|
|
WO/2001/048109A1 |
A treating agent characterized in that it comprises an organic solvent and, dispersed therein, anatase-type titanium dioxide and a thermoplastic resin, wherein the content of the thermoplastic resin is 0.05 to 20.0 %; a method for surfac...
|
|
WO/2001/044209A1 |
The invention describes fluorochemical triazine compounds, compositions containing the fluorochemical triazine compounds, the process for preparing the fluorochemical compounds and compositions, substrates treated with the fluorochemical...
|
|
WO/2001/044402A1 |
A method of polishing or planarizing a substrate comprising abrading at least a portion of the surface of a substrate comprising a metal, metal oxide, metal composite, or mixture thereof, with a composition comprising a metal oxide abras...
|
|
WO/2001/044396A1 |
The polishing composition of this invention is useful for chemical mechanical polishing of substrates containing noble metals such as platinum and contains sulfur-containing compounds at about 0.1 % to 50 % by weight of the polishing com...
|
|
WO/2001/044394A1 |
A glass cleaning composition is described having 20 % - 60 % by volume of alcohol, such as methylated spirits, 5 % - 30 % by volume of a volatile solvent, 1 % - 20 % by volume of an abrasive agent in powder form such as ceric oxide, and ...
|
