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WO/2005/012451A2 |
The claimed invention involves a novel aqueous slurry for chemical-mechanical planarization that is effective for polishing copper at high polish rates. The aqueous slurry according to the present invention comprises particles of MoO2 or...
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WO/2005/010966A1 |
A method for polishing a wafer is disclosed which prevents linear defects. In the method for polishing the surface of a wafer, a wafer is held by a rotatable wafer-holding plate and brought into sliding contact with a polishing cloth whi...
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WO/2005/007770A1 |
An abrasive composition for polishing substrates including a plurality of abrasive particles having a polydisperse particle size distribution with median particle size, by volume, being about 20 nanometers to about 100 nanometers; a span...
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WO/2005/007769A1 |
A method for producing a cerium oxide abrasive, characterized in that the method comprises firing a raw material of cerium carbonate having a fluorine content F (ppm by mass) falling within a range of 10 to 500 ppm by mass, at a firing t...
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WO/2005/005561A1 |
The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (...
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WO/2005/000984A1 |
A polishing composition characterized in that the composition is boehmite-free and comprises water, abrasive grains, a polishing accelerator, and an organic acid ammonium salt or an inorganic acid ammonium salt. The polishing composition...
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WO/2004/111157A1 |
A polishing fluid which comprises an oxidizing agent, an agent for dissolving an oxidized metal, an anticorrosive agent for a metal and water, wherein the anticorrosive agent for a metal comprises at least one of a compound having an ami...
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WO/2004/112105A2 |
A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer (320) that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial “rough” p...
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WO/2004/111146A1 |
A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The ...
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WO/2004/111145A1 |
A polishing composition characterized by comprising water, abrasive grains, a polishing accelerator, and auxiliary abrasive grains, wherein the auxiliary abrasive grains assume a finely divided crystal powder having a ratio of a primary ...
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WO/2004/107429A1 |
An abrasive comprising a slurry obtained by dispersing particles of a tetravalent metal hydroxide in a medium and an additive, wherein the additive is a polymer containing at least one monomer component selected from the group consisting...
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WO/2004/104122A2 |
A polishing composition for polishing a magnetic disk substrate, characterized by comprising water, abrasive grains, a polishing accelerator, and a surface cleaning agent which is a compound comprising a main chain of 2 to 6 carbon atoms...
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WO/2004/103640A1 |
The invention relates to a substance for exposing surfaces of materials comprising distinct Si crystals, especially cylindrical tracks made of aluminum materials that comprise distinct primary Si crystals. The inventive exposing substanc...
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WO/2004/101695A1 |
A polishing composition, comprising water, abrasive grains, a finely divided crystal powder having a polishing accelerator, and a surfactant which is a polycarboxylic acid salt having a carboxylic group number per molecule (n) of 20 to 3...
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WO/2004/101221A2 |
A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process...
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WO/2004/101222A2 |
A CMP composition and process for planarization of a semiconductor wafer surface having a copper barrier layer portion, said composition comprising an oxidizing agent, a boric acid component, and an abrasive.
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WO/2004/100242A1 |
A polishing liquid for CMP processes is characterized by comprising an abrasive, an aqueous solvent and an additive, and by containing 15 weight% or more of abrasive particles based on the weight of the polishing liquid which particles h...
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WO/2004/098830A1 |
An aqueous dispersion having a pH value of between 3 and 7 containing 1 to 35 wt.% of a pyrogenically produced silicon-aluminium mixed oxide powder with a specific surface area of 5 to 400 m²/g, wherein the proportion of aluminium oxide...
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WO/2004/100243A1 |
A slurry composition for chemical-mechanical polishing capable of compensating the nanotopography effect present on the surface of a wafer, and a method for planarizing the surface of a semiconductor device using the composition. The slu...
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WO/2004/096941A1 |
A method for machining a ceramic substrate containing Al, including providing a slurry between a substrate and a machine tool, the slurry containing alumina abrasive and an additive including a phosphorus compound, and moving the substra...
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WO/2004/094547A2 |
The invention provides a method of polishing a substrate, which method comprises the steps of (i) providing a polishing composition, (ii) providing a substrate comprising at least one metal layer, and (iii) abrading at least a portion of...
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WO/2004/092290A1 |
The invention provides a water-based low VOC shoe and leather care product having good product properties and characteristics, which can be formulated by making an appropriate and careful selection of ingredients and their amounts. A sho...
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WO/2004/092291A1 |
Disclosed is a lubricant for solid surfaces, especially skis, comprising a partially fluorinated compound of formula RF-(A)a-(O)b-(B)c-(D)d-(RF)e, wherein RF represents a perfluorinated radical of formula F(CF2)n-, n represents a number ...
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WO/2004/092298A2 |
This invention relates generally to compositions and methods for removing adherent materials and polishing surfaces. In one embodiment, the method employs an improved media comprising core-shell particles. The media can be applied to mic...
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WO/2004/089816A1 |
Process for the production of an aqueous dispersion of pyrogenically produced metal oxide and metalloid oxide powders with a BET surface area of between 5 and 600 m²/g, with a metal oxide or metalloid oxide content in the dispersion of ...
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WO/2004/090937A2 |
A composition that rapidly passivates copper-containing surface to yield a uniform layer of insoluble copper oxide, the composition being useful in chemical-mechanical planarization of copper-containing surfaces is disclosed. The composi...
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WO/2004/085311A1 |
Pyrogenically produced silicon dioxide powder with a specific surface area of between 5 and 600 m²/g and a carbon content of less than 500 ppm, which displays a specific dibutyl phthalate absorption of less than or equal to 1.2 g dibuty...
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WO/2004/083328A2 |
A chemical-mechanical abrasive composition for use in semiconductor processing uses abrasive particles having a non-spherical morphology.
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WO/2004/078410A2 |
An agent for increasing a selection ratio of polishing rates, wherein the agent comprises an organic cationic compound, which increases a ratio of a polishing rate of a silicon nitride film to a polishing rate of a silicon oxide film, wh...
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WO/2004/078864A1 |
A hydrophilizing agent composition which comprises a surfactant having a branched chain, a silicate represented by the general formula (1), at least one silane coupling agent selected from the group consisting of those represented by the...
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WO/2004/076574A2 |
The invention provides a method of polishing a substrate comprising a noble metal comprising (i) contacting the substrate with a CMP system and (ii) abrading at least a portion of the substrate to polish the substrate. The CMP system com...
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WO/2004/076575A2 |
An aqueous slurry is useful for chemical mechanical planarizing a semiconductor substrate. The slurry includes by weight percent, 0.1 to 25 oxidizing agent, 0.1 to 20 silica particles having an average particle size of less than 200 run,...
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WO/2004/073922A2 |
An aqueous chemical mechanical polishing slurry is provided that comprises precipitated amorphous silica abrasive particles treated with acidic aluminum. Also provided is a method of polishing an electronic component substrate comprising...
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WO/2004/072332A1 |
A polishing fluid for polishing a surface of a substrate which has a copper film deposited on the surface so that the copper comes into minute recesses. It is characterized by containing at least one of water-soluble inorganic acids or s...
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WO2004043613A9 |
A dispenser assembly for dispensing a substance from a receptacle is provided. Preferably the collar therefore comprises outwardly projecting and elongated angled ribs for forming complementary elongated grooves in the outer surface of t...
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WO/2004/072199A2 |
The invention provides a polishing composition comprising (i) an abrasive comprising (a) 5 to 45 wt.% of first abrasive particles having a Mohs hardness of 8 or more, (b) 1 to 45 wt.% of second abrasive particles having a three-dimension...
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WO/2004/072203A1 |
A process for producing a polishing composition excelling in dispersion stability wherein the amount of agglomerated particles is reduced. In step 1-1 thereof, ultrapure water is adjusted so as to have a pH value of 1.0 to 2.7. Under she...
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WO2004030041B1 |
A slurry includes a plurality of particles and at least one selective adsorption additive. The particles are preferably composite particles including a core surrounded by a shell provided by the selective adsorption additive. The slurry ...
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WO/2004/069947A1 |
The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier...
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WO/2004/067659A1 |
A self−shining aerosol−type shoe polish composition consisting essentially of 0.5 to 25 % by volume of silicone compound, 1 to 25 % by volume of a drying retarding and wetting agent, optionally 0.1 to 1 % by volume of an anti−stati...
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WO/2004/067660A1 |
The polishing solution is useful for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent sel...
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WO/2004/068570A1 |
A CMP polishing compound which comprises cerium oxide particles, a dispersant, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of either of an N-mono-substituted compound and an N,N-di...
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WO/2004/065506A1 |
The invention relates to a grip wax of skis containing polyisobutylene base, resin as grip material and wax as glide material. Furthermore, the invention relates to a corresponding method and product for applying grip wax os skis to the ...
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WO/2004/065505A1 |
A composition for application to a surface and a method of making the same, said composition comprising at least one wax; at least one reaction product derived from a first surfactant and a second surfactant; and between 40% and 99.8% wa...
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WO/2004/063301A1 |
Compositions for use in CMP processing and methods of CMP processing. The composition (12) utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer...
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WO/2004/061027A1 |
The present invention provides methods of polishing and/or cleaning copper interconnects using sulfonic acid compositions.
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WO/2004/061028A1 |
The present invention provides methods of polishing and/or cleaning copper interconnections using bis (perfluoroalkanesulfonyl) imide acids or tris (perfluoroalkanesulfonyl) methide acids compositions.
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WO/2004/061925A1 |
A method for controlling the selection ratio of a slurry composition for chemical mechanical polishing wherein an oxide layer is rather selectively polished and removed to a nitride layer, characterized in that the slurry composition com...
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WO/2004/055864A2 |
A family of slurries are disclosed which are useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing suc...
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WO/2004/053456A2 |
A method is provided for using abrasive colloidal particles having multi-component composition comprising mixed 1) metal or metalloid oxides, 2) oxyfluorides, or 3) oxynitrides, each grouping (1, 2, or 3) individually alone or in combina...
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