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WO/2004/053008A2 |
A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper element...
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WO/2004/053968A1 |
Disclosed is a slurry composition for secondary polishing of silicon wafers comprising: 2 ~ 10 weight% of colloidal silica having an average particle size of 30 ~ 80 nm; 0.5 ~ 1.5 % by weight of ammonia; 0.2 ~ 1 weight% of a hydroxyalkyl...
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WO/2004/048265A1 |
A high-concentration silica slurry characterized in that the ratio (DL/DT) of average particle diameter (DL) measured from laser diffraction particle size distribution to average particle diameter (DT) measured from TEM micrograph is 1.3...
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WO/2004/044075A2 |
Chemical mechanical slurries containing sulfonated zwitterions. The method comprises a) providing an etched wafer; b) contacting the wafer with the slurry; c) mechanical abrading the wafer.
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WO/2004/044076A1 |
To provide a polishing slurry composition which effectively reduces the occurrence of scratches, and a method of polishing which reduces the occurrence of scratches while realizing an economical polishing step. The aforementioned object ...
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WO/2004/044077A1 |
Furniture polishes, and methods for their use, are disclosed. The polishes are liquids in the form of a dispersion which is a biliquid foam with a thickener, where the foam is structured as an oil-in-water complex. The dispersion has an ...
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WO/2004/044078A1 |
A disposable wipe impregnated with furniture polish or another surface treating liquid such as a hard surface cleaner or insect repellant is disclosed. The liquid is in the form of a dispersion which is a biliquid foam with a thickener, ...
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WO/2004/044079A1 |
Pressurized mixtures of propellent gasses and liquid surface or air treating materials are disclosed. The liquid materials are in the form of a dispersion which is a biliquid foam with a thickener, where the foam is structured as an oil-...
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WO/2004/042812A1 |
A polishing composition and a rinsing composition which effectively prevent a wafer from being contaminated by metal impurities are disclosed. The polishing composition contains a chelating agent, an alkali compound, a silicon dioxide an...
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WO/2004/039905A1 |
A metal polishing composition is used for polishing a metal layer and comprises a film forming compound which polymerizes on a surface of the metal layer, forming a polymer film on the surface of the metal layer. A polishing method for t...
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WO/2004/037943A1 |
A polishing slurry comprising an abrasive comprising as a basic ingredient rare earth oxides containing cerium oxide, which polishing slurry further comprises an anionic surfactant and a nonionic surfactant and has a pH value of at least...
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WO/2004/037937A1 |
The present invention provides a slurry for chemical mechanical polishing (CMP) a metal surface of a semiconductor substrate with a polyurethane-free thermoplastic foam polishing body. The slurry includes an abrasive particle stabilizer ...
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WO/2004/033574A1 |
The invention provides methods of polishing a substrate comprising (i) contacting a substrate comprising at least one metal layer comprising copper with a chemical-mechanical polishing (CMP) system and (ii) abrading at least a portion of...
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WO/2004/033575A1 |
One aspect of the present invention provides an aqueous surface finish composition comprising a film-forming, reversibly crosslinked, emulsion-based polymer composition, and a surface modified inorganic particle material. The surface mod...
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WO/2004/031455A2 |
A slurry and method for chemical mechanical (CMP) a structure including at least one metal based film and at least one underlying dielectric film includes at least one selective such as adsorption additive, such surfactant or a polymer. ...
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WO/2004/031333A1 |
A cleaning agent for removing discolored parts of titanium building materials, which comprises a water-soluble inorganic salt, an organic acid or a salt thereof, a surfactant, and an oxygen-containing hydrophilic hydrocarbon solvent as t...
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WO/2004/030062A1 |
A polishing compound composition for chemical mechanical polishing of a substrate contains (A) an abrasive grain, (B) an aqueous medium, (C) a tartaric acid, (D) trishydroxymethylaminomethane, and (E) one selected from the group consisti...
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WO2003072669A9 |
A polishing composition for polishing a semiconductor wafer includes comprises water, an abrasive that is preferably colloidal silica, water-soluble cellulose having a molecular weight of at least about 1,000,000 and an alkaline compound...
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WO/2004/023539A1 |
A polishing agent composition for polishing the surface of an insulating film comprising an organic silicon material having a C-Si bond and a Si-O bond for use in a semiconductor integrated circuit, which comprises water and particles of...
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WO/2004/020543A1 |
A finishing method and finishing agent for a coated film surface are described. The finishing method and finishing agent, when applied in a finishing process for repairing a coated film, make the coated film surface sufficiently glossy w...
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WO/2004/020545A1 |
Method and apparatus for chemically, mechanically and/or electrolytically removing material from microelectronic substrates. A polishing medium for removing material can include a liquid carrier, an electrolyte disposed in the liquid car...
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WO/2004/015018A1 |
An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal ...
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WO/2004/015021A1 |
A CMP (chemical-mechanical polishing) technique of polishing a substrate efficiently and at high-speed so as to planarize an interlayer insulating film and an insulating film for shallow trench isolation in the manufacturing process of a...
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WO/2004/013242A2 |
This invention is directed to a slurry system and process of metal removal from a substrate. This invention is useful for polishing a microelectronic device. This invention is especially useful for chemical mechanical planarization of a ...
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WO/2004/012248A1 |
A polishing fluid which contains an oxidizing agent, water, a pH adjusting agent, and a cyclic organic compound for accelerating the chemical polishing of the surface to be polished, characterized in that the fluid has a pH of 5 to 10 or...
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WO/2004/011567A1 |
To provide a floor polish composition which has excellent gloss, black heel mark (BHM) resistance, scuff resistance, and storage stability, which in particular has removability, adhesive properties, stain resistance, and water resistance...
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WO/2004/010487A1 |
A semiconductor abrasive comprising cerium oxide abrasive grains, water and an additive wherein the additive is an anionic surfactant or water-soluble organic polymer, such as ammonium polyacrylate, and the pH value at 25ºC is in the ra...
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WO/2004/009726A1 |
Powders of particles comprising a ceramic core and a coating of ceria deposited thereon provide an economical and effective abrasive for glass polishing formulations.
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WO/2004/000916A2 |
A process to prepare a stable dispersion of nanoparticles in aqueous media. A dispersant and aqueous are combined to form a mixture. The dispersant is selected from the group comprising copolymers and cyclic phosphates. Nanoparticles are...
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WO/2003/107407A1 |
A method of polishing an organic insulating film superimposed on a semiconductor substrate at a high polishing rate while inhibiting the occurrence of crack, scratch, film detachment, etc. An organic insulating film of semiconductor inte...
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WO/2003/103894A2 |
The present invention relates chemical mechanical planarization ('CMP') of copper surfaces and describes copper CMP slurries including an oxidizer, one or more hydroxylamine compounds and at least one abrasive. The hydroxylamine composit...
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WO/2003/104350A1 |
A metal polish composition contains an amine represented by general formula (1): wherein m represents an integer of from 1 to 3 and n represents an integer of from 0 to 2, with m and n being such that (3-n-m) is an integer of from 0 to 2...
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WO/2003/104351A1 |
The present invention relates to a metal oxide powder for high precision polishing and prepartion thereof, comprising aggregates formed by cohesion of primary particles, which has a cohesive degree (&agr ) of 1.1 to 2.0 and a cohesive sc...
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WO/2003/104344A1 |
In a slurry solution for chemical mechanical planarization (CMP) of a semiconductor wafer, an abrasive particle is provided having a central body and a plurality of extensions from the central body of the abrasive particle. The plurality...
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WO/2003/104343A2 |
The invention provides a method of polishing a substrate containing a low-k dielectric layer comprising (i) contacting the substrate with a chemical-mechanical polishing system comprising (a) an abrasive, a polishing pad, or a combinatio...
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WO/2003/103033A1 |
A polishing fluid which comprises an oxidizing agent for metals, anticorrosive for metals, metal oxide-dissolving agent, and water, wherein the metal oxide-dissolving agent comprises at least one member selected among acids having a diss...
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WO/2003/101665A1 |
The present invention provides a chemical mechanical polishing slurry for use in removing a first substance from a surface of an article in preference to silicon nitride by chemical mechanical polishing. The chemical mechanical polishing...
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WO/2003/098680A1 |
The present invention relates to apparatus, procedures, and compositions for avoiding and reducing damage to low dielectric constant materials and other soft materials, such as Cu and Al, used in fabricating semiconductor devices. Damage...
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WO/2003/094216A1 |
A polishing fluid which comprises an oxidizing agent, a metal oxide dissolving agent, an anti-corrosive agent for a metal and water and has a pH of 2 to 5, wherein the metal oxide dissolving agent comprises one or more selected from amon...
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WO/2003/092945A1 |
An electrolytic polishing method in which conductivity is enhanced without causing aggregation or precipitation of abrasive grains and good planarization is realized without causing any defect in a metal film or wiring to be polished. In...
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WO/2003/091351A2 |
An unexpanded perlite ore polishing composition is shown. The composition comprises base material having grains of unexpanded perlite ore of a selected distribution of particle sizes which undergo fracturing of the grains as a function o...
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WO2003043780B1 |
According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is perform...
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WO2002061824A9 |
A copper polish slurry, useful in the manufacture of integrated circuits generally, and for chemical mechanical polishing of copper and copper diffusion barriers particularly, may be formed by combining a chelating, organic acid buffer s...
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WO/2003/080757A1 |
A cerium based abrasive material containing a chlorine -containing compound, which contains chlorine (element) in an total amount of 0.05 to 5.0 mass % relative to the total mass of the oxides of rare earth elements contained therein. An...
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WO/2003/076538A1 |
The invention provides a polishing composition comprising (a) a silica abrasive, (b) methanol, and (c) a liquid carrier, wherein the polishing composition has a pH of 1 to 6, and the polishing composition is colloidally stable. The inven...
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WO/2003/075332A1 |
A first polishing composition which comprises at least one selected from among silicon dioxide and periodic acid and salts thereof, at least one selected from tetraalkylammonium hydroxides and tetraalkylammonium chlorides, hydrochloric a...
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WO/2003/073448A2 |
Apparatus and method for in-line automation of a semiconductor fabrication process allowing for the selection of a control parameter value that will move a measured workpiece geometry toward a target acceptance range. Such feed-forward a...
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WO/2003/073481A2 |
A system (70) for crystallography including a sample holder (74), an electron source (76) for generating an electron beam, and a scanning actuator (80) for controlling the relative movement between the electron beam and the crystalline s...
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WO/2003/072671A1 |
CMP formulations for use on nickel/phosphorus alloys comprising abrasive particles and an oxidant, a modifier for the action of the oxidant and first and second accelerants to sequester removed materials containing phosphonate and ammoni...
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WO/2003/072670A1 |
A slurry for chemical mechanical polishing (CMP) of a copper or silver containing film provides at least one reactant for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film. The soft ...
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