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WO/2003/072683A1 |
A slurry for chemical mechanical polishing (CMP) of a refractory metal based barrier film includes a plurality of composite particles and at least one selective adsorption additive, such as a surfactant or a polymer. The composite partic...
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WO/2003/072672A1 |
Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhib...
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WO/2003/071592A1 |
A method for polishing wherein an article is polished by the thrust thereof on fixed abrasive grains with sliding, characterized in that it comprises a first step of polishing the article to be polished while feeding a polishing fluid wh...
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WO/2003/071593A1 |
A method for polishing wherein an article is polished by the thrust thereof on fixed abrasive grains with sliding, characterized in that it comprises a first step of polishing the article to be polished while feeding a polishing fluid wh...
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WO/2003/068883A1 |
The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecul...
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WO/2003/068881A1 |
Abrasive composition for the chemical-mechanical polishing in one stage of substrates used in the microelectronics semiconductors industry containing at least one metal layer and one insulator layer, comprising an acid aqueous suspension...
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WO/2003/068882A1 |
The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The activator comprises a metal other than a metal o...
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WO/2003/064551A1 |
A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon comprising a noble metal, noble metal alloy, no...
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WO/2003/062338A1 |
The invention provides a chemical-mechanical polishing system and method comprising a liquid carrier, a polishing pad and/or an abrasive, and at least one amine-containing polymer, wherein the amine-containing polymer has 5 or more seque...
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WO/2003/062337A1 |
A tungsten CMP solution for planarizing semiconductor wafers includes a primary oxidizer having a sufficient oxidation potential for oxidizing tungsten metal to tungsten oxide&semi and the tungsten CMP solution has a static etch rate for...
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WO/2003/060962A2 |
An electrolyte composition and method for planarizing a surface of a wafer using the electrolyte composition is provided. In one aspect, the electrolyte composition includes ammonium dihydrogen phosphate, diammonium hydrogen phosphate, o...
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WO/2003/060980A2 |
A planarization method includes providing a second and/or third Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization co...
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WO/2003/060028A1 |
A planarization method includes providing a metal−containing surface (preferably, a Group VIII metal−containing surface, and more preferably a platinum−containing surface) and positioning it for contact with a polishing surface in ...
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WO/2003/060027A2 |
An abrading composition and a process for abrading factory pre-finished surface coverings, wherein the abrading composition comprises an effective amount of wear-resistant particles, a rheology modifier, and a solvent. This invention fur...
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WO/2003/055958A1 |
The present invention is drawn to a composition comprising abrasive particles comprising an organic resin for chemical mechanical planarization (CMP), which can be widely used in the semiconductor industry. The abrasive composition is an...
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WO/2003/054096A1 |
The present invention relates to a method for preparing cerium oxide coated silica particles and cerium oxide silica particles obtainable by the method. The invention further relates to cerium oxide coated silica particles and the use th...
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WO/2003/054944A1 |
Strontium carbonate, barium carbonate, Strontium sulphate and barium sulphate having a sufficient degree of fineness, especially when produced synthetically, are suitable as abrasive agents in the chemical-mechanical polishing of microel...
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WO/2003/050164A1 |
Polymerized fatty acid-based polyamides may be combined with low polarity and high polarity co-solvents to produce homogeneous water-in-oil emulsions. These emulsions have the appearance of white or translucent creams, with stiffness ran...
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WO/2003/050859A1 |
Disclosed is a chemical mechanical planarizing method useful for removing silicon carbide hardmask capping materials in the presence of Low-k dielectrics contained on semiconductor wafers. The method uses zirconia-containing slurries at ...
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WO/2003/050864A2 |
The invention provides a method of polishing a substrate comprising a metal layer comprising copper. The method comprises the steps of (i) providing a chemical-mechanical polishing system comprising a liquid carrier, a polishing pad, an ...
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WO/2003/044113A1 |
A wiping article for polishing hard painted surfaces, particularly automotive finishes, comprising a fabric substrate impregnated with a solution of fluorine compounds or a solution of fluorine and silicone compounds.
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WO/2003/042310A1 |
An additive composition for a slurry contains a first salt of polymeric acid including a first polymeric acid having a first weight average molecular weight and a first base material, and a second salt of polymeric acid including a secon...
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WO/2003/042321A1 |
A polish containing cerium oxide as a principal component, when dispersed in water in an amount of 10 % by mass, has a precipitate bulk specific density in the range of 0.8 g&sol ml to 1.0 g&sol ml, having a primary particle size in the ...
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WO/2003/042322A1 |
Non-spherical silica particles having nodular morphology for use as an abrasive media in chemical mechanical polishing are disclosed. Also disclosed are aqueous slurries of monodispersed non-spherical nodular shaped particles having mean...
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WO/2003/040252A2 |
A composition for chemical mechanical polishing that includes a slurry is described. A sufficient amount of a selectively oxidizing and reducing compound is provided to produce a differential removal of a metal and a dielectric material....
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WO/2003/038883A1 |
A polishing fluid which comprises at least one of a surfactant and an organic solvent, an oxidized metal dissolving agent and water, or comprises abrasive grains having a surface modified with an alkyl group and water&semi the polishing ...
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WO/2003/035782A1 |
The invention provides a chemical-mechanical polishing system comprising an abrasive, a carrier, andeither boric acid or a conjugate base thereof, wherein the boric acid and conjugate base are not presenttogether in the polishing system ...
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WO/2003/036705A1 |
A method for producing a polishing compound, which comprises dissolving a heterocyclic benzene compound such as benzotriazole in one or more organic solvents selected from the group consisting of a primary alcohol having 1 to 4 carbon at...
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WO/2003/035783A1 |
A furniture polish comprising a mineral oil, a silicone polish, and a bittering agent may be prepared. Such a composition may be made suitable for dispensing as a spray or mist by means of a non-pressurized spray apparatus by the additio...
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WO/2003/035243A2 |
A method for the thickening of mineral oil products, wherein the thickened mineral oil product exhibits shear-thinning so as to be applicable to a surface by non-pressurized spray mechanisms. The thickening agent added to the petroleum d...
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WO/2003/033608A1 |
The invention relates to improved compositions comprising paraffin waxes and fluoropoylmer micro powders, and to their uses in products and articles where reduced friction is desirable, such as snow slider equipment.
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WO/2003/031527A1 |
The invention provides a chemical-mechanical polishing system for a substrate comprising a liquid carrier, a polishing pad and/or an abrasive, a per-type oxidizer, and a phosphono group-containing additive, as well as a method of using t...
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WO/2003/031333A2 |
Aluminium oxide doped with a divalent metal oxide, produced by flame hydrolysis and which has no spinell structures or alpha-aluminium detectable in an x-ray diffractogram. It is produced by a pyrogenic process in which, during the flame...
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WO/2003/027202A1 |
A hydrophilizing wax composition which gives a wax coating layer whose surface is hydrophilic and imparts a gloss and long−lasting antifouling properties to a base. It comprises: a hydrophilizing agent having one or more hydrolyzable g...
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WO/2003/027201A1 |
The invention provides a method for polishing a substrate comprising a metal layer using achemical-mechanical polishing system comprising an abrasive and/or polishing pad, a rare earth salt, anoxidizer that is a stronger oxidant than the...
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WO/2003/025085A1 |
A cerium−based abrasive material slurry containing cerium−based abrasive material particles having a content of the total rare earth oxide (TREO) of 95 wt % or more, wherein the cerium−based abrasive material particles have a fluor...
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WO/2003/020856A1 |
One or more oligomers of an olefin are prepared in the presence of a single-site catalyst. Preferably, the olefin is an $g(a)-olefin, and the oligomers are a poly-alpha-olefin (PAO). The PAO so prepared is completely or substantially fre...
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WO/2003/020839A1 |
A polishing composition of abrasive grains, a phosphorus-containing inorganic acid or salt thereof and another inorganic acid or salt thereof contained in an aqueous medium is used for the polishing of magnetic disk substrates or the like.
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WO/2003/021651A1 |
A polishing fluid for a metallic film which exhibits an etching rate of 10 nm&sol min or less, a finishing rate at a load of 10 KPa of 200 nm or more, and a contrast, which means a ratio of the finishing rate to the etching rate, of 20 o...
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WO/2003/018714A1 |
An abrasive free formulation for chemical mechanical polishing and method for using the formulation for polishing copper and related materials. The abrasive free formulation has a high removal rate on copper and a low removal rate on bar...
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WO/2003/019646A1 |
A polishing fluid for polishing a metal includes, submicron particles, water, and a nonoxidizing reagent for removal of the metal, the nonoxidizing reagent being a hard base anion species of a Lewis base having a chemical bonding affinit...
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WO/2003/016424A1 |
A polishing slurry composition for CMP comprising 0.5 to 5 % by weight of a silica-coated ceria powder dispersed in an aqueous medium can be beneficially used in the planarization of the surfaces of various film layers of semi-conductors...
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WO/2003/015981A2 |
A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper (14), barrier material (13), and dielectric material (12) that comprises first and second-step slurries. The first-step s...
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WO/2003/014251A1 |
Non−magnetic particles, in particular, of an oxide such as cerium oxide, zirconium oxide, aluminum oxide, silicon oxide or iron oxide which have the shape of a plate and have an average particle diameter in the direction of the plate s...
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WO/2003/015148A1 |
Disclosed herein are slurry compositions for use in CMP(chemical mechanical polishing) process of metal wiring in manufacturing semiconductor devices, comprising a peroxide, an inorganic acid, a propylenediaminetetraacetate(PDTA)-metal c...
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WO/2003/014021A1 |
Granules based on aluminium oxide having the characteristics: Average grain diameter: 5.0 to 150 $g(m)m; Tamped density: 300 to 1200 g/l. The granules are produced by dispersing aluminium oxide in water, performing spray drying, optional...
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WO/2003/012169A1 |
A metal surface protection film forming agent containing a specific &agr −amino acid such as leucine and phenyl alanine, and a metal abrasive liquid using this. The agent can be used as an abrasive liquid used in a chemical−mechanica...
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WO/2003/009349A2 |
Methods and compositions are provided for planarizing a substrate surface with reduced or minimal defects in surface topography. In one aspect, a method is provided for processing a substrate including positioning a substrate comprising ...
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WO/2003/006205A2 |
The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressure...
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WO/2003/004590A1 |
The invention relates to a lanolin substitute that can absorb up to at least twice the weight thereof in water, aqueous solution or aqueous suspension. The inventive lanolin substitute forms real emulsions which are stable over time and ...
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