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WO/2024/091104A1 |
Provided are cerium oxide particles for chemical-mechanical polishing and a chemical-mechanical polishing slurry composition comprising same. By combining the cerium oxide particles that are characteristic of the present invention with a...
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WO/2024/091103A1 |
Provided are cerium oxide particles for chemical-mechanical polishing and a chemical-mechanical polishing slurry composition comprising same. By combining the cerium oxide particles that are characteristics of the present invention with ...
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WO/2024/091100A1 |
Provided are cerium oxide particles for chemical mechanical polishing and a chemical mechanical polishing slurry composition comprising same. A combination of the characteristic cerium oxide particles of the present invention with a dish...
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WO/2024/091586A1 |
Radionuclide brachytherapy sources (RBS) for applying radiation to a target area, for example for treating macular edema (ME), diabetic retinopathy (DR), diabetic macular edema (DME), cystoid macular edema (CME), ME secondary to central ...
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WO/2024/091102A1 |
Provided are cerium oxide particles for chemical-mechanical polishing and a slurry composition for chemical-mechanical polishing comprising same. By means of a combination of cerium oxide particles, the characteristic of the present inve...
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WO/2024/091105A1 |
Provided are: cerium oxide particles for chemical mechanical polishing; and a slurry composition for chemical mechanical polishing comprising same. Provided are: a slurry composition for chemical mechanical polishing that can significant...
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WO/2024/091101A1 |
Provided are: chemical mechanical polishing cerium oxide particles; and a chemical mechanical polishing slurry composition containing same. Provided are the chemical mechanical polishing slurry composition and a method for manufacturing ...
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WO/2024/091098A1 |
Provided are: cerium oxide particles for chemical mechanical polishing; and a chemical mechanical polishing slurry composition containing same. The characteristic cerium oxide particles of the present invention can be combined with a sur...
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WO/2024/091099A1 |
Provided are cerium oxide particles for chemical mechanical polishing and a chemical mechanical polishing slurry composition comprising same. A combination of the characteristic cerium oxide particles of the present invention with a cati...
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WO/2024/084957A1 |
Provided are: a polishing method which can maintain a sufficiently high insulating-film polishing rate and selectivity and can be sufficiently inhibited from causing polishing flaws; and a method for producing a semiconductor component u...
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WO/2024/080833A1 |
The present invention provides a slurry composition for chemical mechanical polishing and a manufacturing method therefor, wherein the slurry composition is capable of achieving a high polishing rate for low dielectric constant films rel...
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WO/2024/081201A1 |
The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 or less. The invention...
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WO/2024/075546A1 |
Provided is a polishing agent, a polishing method, and a method for manufacturing a semiconductor component that exhibit a good polishing speed in CMP of a surface to be polished, said surface including boron-doped silicon. The polishi...
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WO/2024/070832A1 |
The present invention provides a composition for finish polishing, the composition enabling efficient proceeding of etching, thereby being capable of improving the polishing rate, while maintaining the surface quality after the polishing...
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WO/2024/073209A1 |
Synthesis of cationic-modified water-soluble polysaccharide is disclosed. The cation is pendent to the polysaccharide backbone. Chemical Mechanical Planarization (CMP) slurries comprise abrasives; activator; oxidizing agent; additive com...
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WO/2024/070831A1 |
The present invention provides a polishing composition that allows etching to proceed efficiently. Provided is a polishing composition containing: silica particles as the abrasive grains; a basic compound; and water. Here, the basic comp...
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WO/2024/073211A1 |
Synthesis of guanidinium-based polymers is disclosed. Chemical Mechanical Planarization (CMP) slurries comprise abrasives; activator; oxidizing agent; additive comprising guanidinium-based polymers; and water. The use of the synthesized ...
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WO/2024/069578A1 |
An abrasive article, along with related compositions and methods, are provided. The abrasive article includes a backing, an abrasive layer, and a supersize coat comprising a supersize coating composition. The supersize coating compositio...
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WO/2024/071086A1 |
Provided are a polishing composition, a substrate protection agent, and manufacturing methods therefor, said polishing composition containing a cellulose derivative, and being effective for reducing surface defects after polishing. Provi...
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WO/2024/064127A1 |
A chemical mechanical polishing composition for tungsten CMP consists of, consists essentially of, or comprises a liquid carrier, cationic abrasive particles dispersed therein, an iron-containing accelerator, a tungsten etch inhibitor, a...
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WO/2024/053390A1 |
The present invention provides: a polishing agent which is capable of polishing a surface to be polished, the surface containing a resin, highly flat at a high rate; an additive solution for polishing agents; and a polishing method. Th...
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WO/2024/048271A1 |
Provided are: a composition for chemical mechanical polishing; and a polishing method using the same. The composition allows rapid polishing of a polishing surface that contains a silver material for wiring, and makes it possible to obta...
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WO/2024/043061A1 |
Provided is a polishing composition capable of achieving high HLM rim protrusion resolving ability while maintaining a polishing rate. Also provided is a polishing composition for preliminarily polishing the surface of a silicon material...
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WO/2024/040007A1 |
A surface treating formulation with an organic solvent and a reduced amount of silicone fluid. In examples, the organic solvent may be a gas-to-liquid solvent and may include a synthetic paraffinic hydrocarbon. The silicone fluid may inc...
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WO/2024/035770A1 |
The present disclosure describes a slurry composition to reduce roughness a surface, such as a polycrystalline material including silicon carbide, alumina, diamond, and carbon. The present disclosure can also be applied to single crystal...
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WO/2024/031744A1 |
Provided in the embodiments of the present disclosure are a semiconductor structure and a preparation method therefor. The preparation method for a semiconductor structure comprises: providing a first dielectric layer and a second dielec...
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WO/2024/034618A1 |
The present invention provides a polishing liquid which contains: abrasive grains; an ether compound which has at least one group that is selected from the group consisting of a carboxy group and a carboxylate group; and water. The prese...
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WO/2024/029457A1 |
Provided is a polishing composition containing a water-soluble polymer, the polishing composition being capable of achieving a high-quality surface without compromising polishing rate. The polishing composition comprises: silica particle...
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WO/2024/025797A1 |
A composition includes at least one pH adjuster, at least one chelating agent, at least one anionic surfactant, at least one nitrogen containing heterocycle, at least one alkylamine compound, and an aqueous solvent, wherein the compositi...
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WO/2024/024413A1 |
The present invention provides means for preventing sedimentation of abrasive grains and improving redispersibility of abrasive grains, while improving polishing performance. The present invention relates to a polishing composition com...
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WO/2024/026380A1 |
In one embodiment, a polishing composition can comprise abrasive particles including zirconia, an oxidizing agent including hydroxylamine and water. The polishing composition can have a high copper removal rate of at least 3500 Å/min, a...
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WO/2024/014425A1 |
A cerium-based abrasive material containing composite rare earth abrasive material particles that contain lanthanum and cerium, wherein the cerium oxide content is at least 55.0 mass% of the total rare earth oxide (TREO) content, and the...
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WO/2024/010249A1 |
The present invention relates to a slurry composition for polishing a copper barrier layer for chemical mechanical planarizing (CMP) of tantalum nitride or tantalum as a diffusion barrier in the presence of an interconnect structure in a...
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WO/2024/004751A1 |
A polishing material slurry according to the present invention comprises: manganese oxide abrasive grains that contain manganese oxide particles; permanganate ions; phosphoric acids; and a polymer additive which contains one or more wate...
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WO/2024/004750A1 |
A polishing material slurry according to the present invention comprises: manganese oxide abrasive grains that contain manganese oxide particles; permanganate ions; and phosphoric acids. A polishing method of a polishing material slurry ...
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WO/2023/211707A9 |
A formulation that is an aqueous dispersion of abrasive particles and a surfactant configured to polish an external surface of plastic ophthalmic lens is provided along with a method of using such formulation to polish such lens. This fo...
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WO/2023/242394A1 |
The present invention relates to a suspension of oxygenated cerium compound particles, said particles having a D50 of from 10 to 200 nm and a D90 below 1000 nm, determined by laser particle size analysis, in a liquid medium, preferably a...
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WO/2023/243905A1 |
The present invention relates to a polishing slurry composition for a silicon carbide wafer, and a polishing slurry composition for a silicon carbide wafer according to an embodiment of the present invention comprises polishing particles...
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WO/2023/240260A1 |
A chemical mechanical polishing (CMP) slurry can comprise a plurality of particles distributed in a carrier, wherein at least a portion of the particles of the plurality of particles can have a body including a core comprising zirconia a...
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WO/2023/229009A1 |
An aspect of the present disclosure provides a grinding liquid composition that can reduce residue of silica on a substrate surface after grinding is performed, while maintaining a grinding rate. One aspect of the present disclosure pe...
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WO/2023/205721A1 |
Compositions comprising an alkyloxylated decyne diol, a poly-alkylene glycol, and/or a polydi methyl silane are disclosed. Embodiments of the present disclosure may be useful for decreasing the quantity of foam present or generated in co...
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WO/2023/198783A1 |
The present invention relates to improved compositions for cleansing dental appliances comprising hydrogen peroxide and at least one acid selected from the group consisting of salicylic acid, furoic acid and formic acid.
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WO/2023/201189A1 |
Synthesis of polycationic polymer or copolymer is disclosed. The polycationic polymer or copolymer are formed by at least one first cationic monomer and at least one second cationic monomer wherein the first cationic monomer and the seco...
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WO/2023/189512A1 |
Provided is a polishing composition that can achieve an excellent polishing/removal rate for a polishing target. The polishing composition provided by the present invention is used for polishing a polishing target. The polishing composit...
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WO/2023/189400A1 |
The present invention provides: a composition for chemical mechanical polishing, the composition being capable of selectively polishing tungsten films by increasing the polishing rate of tungsten films with respect to silicon oxide films...
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WO/2023/186762A1 |
The presently claimed invention relates to dielectric polishing composition and methods thereof. The presently claimed invention particularly relates to a composition comprising: (A) surface - modified colloidal silica particles comprisi...
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WO/2023/192248A1 |
This disclosure relates to polishing compositions containing at least one abrasive, at least one organic acid or a salt thereof, at least one organic solvent in an amount of from about 3% to about 50% by weight of the composition, and an...
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WO/2023/189812A1 |
The present invention provides a polishing composition that can realize a high-quality surface. The polishing composition includes silica particles (A), a basic compound (B), a first water-soluble polymer (C1), a second water-soluble pol...
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WO/2023/183100A1 |
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, abrasive particles in the liquid carrier, a pyrophosphate compound, and a sulfonate compound or a compound including a quate...
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WO/2023/181929A1 |
Provided is a polishing composition capable of imparting a high surface quality and improving the polishing rate. Specifically provided is a polishing composition containing: silica particles (A); a basic compound (B); a first water-solu...
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