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Matches 1 - 50 out of 4,259

Document Document Title
WO/2018/221357A1
The present invention addresses the problem of providing a ceria-based composite particle dispersion which is capable of performing polishing at high speed, even for silica films, Si wafers, and difficult to process materials, and which ...  
WO/2018/217978A1
The present disclosure is directed to a fluid composition that can be used in chemical-mechanical polishing processes of inorganic material. The fluid composition can include at least one oxidizing agent and a multivalent cation componen...  
WO/2018/208558A1
The present disclosure relates to compositions and methods of using the compositions for treating a floor surface. The disclosed compositions clean the floor surface, repair damage, or maintain the original look of the floor. The disclos...  
WO/2018/199453A1
The present invention relates to a slurry composition for chemical mechanical polishing. More particularly, the present invention relates to a slurry composition for chemical mechanical polishing which uses a compound having phosphate gr...  
WO/2018/196023A1
A liquid shoe polish and a preparation method therefor, comprising mixture A and mixture B, the ratio of mixture A to mixture B being 1:2. Mixture A comprises in terms of parts by weight: Tween 60 20-30 parts, castor oil 13-17 parts, and...  
WO/2018/193916A1
[Problem] To provide: a polishing composition which, when used in a wafer polishing step, gives a flat polished surface having a small difference in surface level between the central part and peripheral part (laser mark part) of the wafe...  
WO/2018/194792A1
The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.  
WO/2018/189239A1
The invention relates to a device (1) and a method for polishing a surface (2) of a strip (3) made of metal, in particular a continuous strip, the device (1) comprising at least one polishing head (4, 5) for polishing the surface (2), th...  
WO/2018/190077A1
The present invention provides a synthetic quartz glass substrate polishing agent comprising polishing particles and water, and is characterized in that the polishing particles comprise silica particles as base particles, on the surface ...  
WO/2018/191454A1
Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel-containing substrate surfaces such as nickel phosphorus (NiP) surfaces for hard disk application...  
WO/2018/180153A1
The present invention provides a polishing composition whereby it becomes possible to provide a silicon wafer that is reduced in the occurrence of edge roll off and is improved in the overall flatness when the silicon wafer is roughly po...  
WO/2018/182087A1
The present invention relates to a ski wax composition comprising superhydrophobic carbon nanoparticles, and a preparation method therefor and, specifically, to a ski wax composition comprising a wax and superhydrophobic carbon nanoparti...  
WO/2018/183310A1
The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2): Formula (I) at least one compound of structure (I): (I),...  
WO/2018/174008A1
Provided is a polishing composition which is capable of effectively improving the polishing rate. The present invention provides a polishing composition for polishing a polishing object material. This polishing composition contains water...  
WO/2018/173814A1
The present invention provides a polishing composition that is capable of attaining adequate planarization and has a low etching speed while having a high polishing speed. The present invention is a polishing composition including abrasi...  
WO/2018/168206A1
The present invention provides a polishing composition which can be used to reduce an unintended height difference occurring between different materials or an unintended height difference occurring between sparse and dense portions of a ...  
WO/2018/159530A1
One objective of the present invention is to provide a polishing solution which is not likely to cause dishing and defects on a polished surface when applied to CMP of an object to be polished, said object containing a cobalt-containing ...  
WO/2018/156629A1
A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surf...  
WO/2018/157087A1
Ooids, microabrasive compositions containing ooids and methods of making microabrasive compositions containing ooids are described. Generally, ooids represent small particles, which are selectable for size, size distribution, and other c...  
WO/2018/156678A1
Fluid synthesis system and corresponding method for synthesis of slurry containing abrasive particles. The system and method are configured to substantially segregate the abrasive particles passing through the filter, used at the filteri...  
WO/2018/150799A1
This floor coating agent composition comprises: a main agent (X) which can form a coating film, and contains a water dispersion (a1) of an acrylic polymer having a carboxyl group and a glass transition temperature of less than 70ºC, and...  
WO/2018/150856A1
[Problem] To provide a polishing composition having excellent performance of eliminating protrusions formed on the periphery of a hard laser mark. [Solution] A polishing composition comprising abrasive grains, a water-soluble polymer, a ...  
WO/2018/147074A1
Provided is a polishing liquid which is used to polish a surface-to-be-polished that contains a tungsten material, wherein: the polishing liquid contains abrasive grains, a polymer having cationic groups at terminals, an oxidizing agent,...  
WO/2018/139492A1
Provided are a processing medium which combines rust-preventive performance with metal-contamination-preventing performance, a processing composition, and a processing method. The processing medium according to the present invention cont...  
WO/2018/136511A1
A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly effica...  
WO/2018/131508A1
[Problem] To provide a polishing composition with which it is possible to use abrasive grains that do not cause defects and increase a mechanical friction effect to polish, at high speed, a substrate on which a coating film of silica or ...  
WO/2018/128849A1
The invention provides a chemical mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing compositi...  
WO/2018/124226A1
Provided is a polishing composition which is capable of further reducing microdefects and haze on polished wafers. The polishing composition includes silica particles, an inorganic alkali compound, polyglycerol, and a multi-chain polyoxy...  
WO/2018/123875A1
The present invention provides: a means for preventing sedimentation of abrasive grains while maintaining polishing performance; and a means for improving re-dispersibility of abrasive grains while maintaining polishing performance. The ...  
WO/2018/120809A1
The present invention provides a chemical-mechanical polishing liquid for flattening a barrier layer, comprising: abrasive particles, an azole compound, a complexing agent, a nonionic surfactant, and an oxidizing agent. The nonionic surf...  
WO/2018/124017A1
Provided in one embodiment are cerium oxide abrasive grains with which it is possible to improve a polishing rate. The present disclosure, in one embodiment, pertains to cerium oxide abrasive grains to be used in an abrasive, wherein the...  
WO/2018/124013A1
In one embodiment, provided is a cerium oxide abrasive grain with which it is possible to improve the polishing rate. The present disclosure, in one embodiment, pertains to a cerium oxide abrasive grain used for an abrasive, wherein the ...  
WO/2018/125905A1
The present disclosure provides chemical mechanical polishing compositions that achieve minimal dishing at reduced dishing reducer (DR) levels when compared to known CMP compositions. The compositions of the disclosure include a dynamic ...  
WO/2018/120812A1
A chemical mechanical polishing liquid used for planarizing a barrier layer and a use thereof, the polishing liquid comprising silicon dioxide particles, an azole compound, a complexing agent, a siloxane surfactant, and an oxidizing agen...  
WO/2018/124229A1
Provided is a polishing composition which is capable of further reducing microdefects and haze on polished wafers. The polishing composition includes silica particles, a basic compound, and polyglycerol. The mass ratio of silica to polyg...  
WO/2018/120808A1
Provided is a chem-mechanical polishing liquid for planarization of a barrier layer, comprising abrasive particles, an azole compound, a complexing agent, a nonionic surfactant and an oxygenant, wherein the nonionic surfactant is a block...  
WO/2018/120811A1
A chemical-mechanical polishing solution, comprising abrasive particles, a corrosion inhibitor, a complexing agent, an oxidant, and at least one sulphonate anionic surfactant. The polishing solution can be used for polishing copper metal...  
WO/2018/116521A1
A polishing liquid of the present invention comprises manganese oxide grindstone particles, permanganate ions, and a cellulose-based surfactant or a cationic surfactant, and has a pH of 5 to 11. The cellulose-based surfactant is preferab...  
WO/2018/116890A1
Provided is a polishing composition capable of attaining a high polishing rate. The polishing composition comprises abrasive silica grains, a pH regulator, and water. The affinity AV between the abrasive silica grains and the water is 0....  
WO/2018/099110A1
A silicon nitride chemical-mechanical polishing solution, comprising abrasive particles, a compound containing one or more carboxyl groups, and an anionic surfactant containing long alkyl chains. The silicon nitride chemical-mechanical p...  
WO/2018/099109A1
A chemical-mechanical polishing solution having high silicon nitride selectivity, comprising abrasive particles and a compound containing one or more carboxyl groups. The polishing solution has a high SiN polishing rate, a low Teos polis...  
WO/2018/099111A1
The present invention relates to a chemical-mechanical polishing solution having high silicon nitride selectivity, comprising water and abrasive particles and further comprising a heterocyclic compound containing one or more carboxyl gro...  
WO/2018/101583A1
A slurry composition for polishing an organic film of the present invention comprises an oxidant, an organic acid, a polishing accelerator comprising a repeating unit derived from maleic acid or maleic anhydride, and water, wherein the p...  
WO/2018/096991A1
Provided is a polishing composition containing a cellulose derivative, the polishing composition being effective in giving polished surfaces having few defects. This application provides a polishing composition comprising abrasive grains...  
WO/2018/097261A1
The present invention provides a method for polishing a glass substrate, which is capable of maintaining a polishing rate that is higher than ever before for a long period of time in a glass substrate polishing process wherein cerium oxi...  
WO/2018/088370A1
Provided are a polishing composition and a silicon wafer polishing method that are capable of providing a high degree of flatness. The polishing composition contains abrasive particles and a basic compound. These abrasive particles have ...  
WO/2018/088371A1
Provided are a polishing composition and a silicon wafer polishing method that are capable of providing a high degree of flatness. The polishing composition contains abrasive particles and a basic compound. The product of the abrasive pa...  
WO/2018/075409A2
The invention provides a chemical-mechanical polishing composition containing abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula (I) wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein...  
WO/2018/075409A3
The invention provides a chemical-mechanical polishing composition containing abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula (I) wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein...  
WO/2018/071285A1
CMP compositions providing stable and robust polishing performance at elevated pad or wafer surface temperatures are disclosed, as well as methods for use thereof. The compositions of the disclosure include reaction rate optimizing (RRO)...  

Matches 1 - 50 out of 4,259