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JP5400474B2 |
To provide a reference member for calibrating a dimension of an electronic microscope device, the reference member suppressing deposition of contamination and having a microscopic reference dimension. The reference member for calibrating...
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JP2014013170A |
To provide a measurement method for measuring a film thickness of a thin-film sample by irradiating a sample with an electron beam to detect a secondary electron beam dose, capable of performing accurate measurement without any time and ...
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JP5392312B2 |
The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these obj...
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JP5393550B2 |
In a process of acquiring an image of semiconductor patterns by using a scanning electron microscope (SEM), this invention provides an image generating method and device that allows a high-resolution SEM image to be produced while suppre...
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JP5395000B2 |
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JP5396496B2 |
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JP5391458B2 |
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JP5386502B2 |
Provided is a technology of performing more highly accurate semiconductor inspection by detecting a pattern edge which does not contribute as a mask in an etching step and measuring a pattern without including such edge at the time of ca...
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JP5389840B2 |
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JP5386446B2 |
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JP5380460B2 |
This invention provides a standard member allowing magnification calibration for use in an electron microscope to be performed with high precision. A (110) or (100) oriented silicon substrate including a magnification calibration pattern...
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JP5385786B2 |
The invention relates to a method of carrying out measurements with penetrating radiation on a hollow object comprising at least one wall surrounding an inner space of the object, said wall comprising an inner surface and an outer surfac...
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JP5378266B2 |
To extract and measure, a plurality of measurement areas too having a pattern whose width and length are identical with a measurement area to output a measurement result, when the measurement area is designated on an image, relating to a...
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JP5375541B2 |
To provide a piping thickness measurement apparatus for achieving a measurement by a three-beam system using a single radiation source at each predetermined angle, reducing a cost, and improving the measurement accuracy. The piping thick...
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JP2013255228A |
To provide a sensor device operated at radio frequencies and detecting accurate measurements, and an antenna for use in the sensor device.A sensor head 202 is configured for use in a sensing device operated at radio frequencies. The sens...
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JP2013253883A |
To instantaneously perform planar or linear measurement of profiles of surfaces of various sorts of charging materials inserted into an installation such as a blast furnace and a storehouse, to achieve charging operation even during meas...
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JP5365010B2 |
To provide a three-dimensional observation method using radioscopy capable of accurately finding three-dimensional position information of specific sections in objects, objects of radioscopy, such as void defects in aluminum die-cast par...
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JP5366467B2 |
The present invention provides a method and system of material identification using binocular steroscopic and multi-energy transmission image. With the method, any obstacle that dominates the ray absorption can be peeled off from the obj...
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JP5367617B2 |
To provide a CT device for tires for preventing X rays from being absorbed easily by a load member for giving a load to a tire with sufficient strength and obtaining a clear sectional image of a tire in a loaded state. In the CT device f...
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JP5357877B2 |
A distance measuring apparatus for detecting the position of a reflection body in a line structure is provided that includes a sensor device, which has at least one antenna for feeding a transmission signal as an electromagnetic wave int...
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JP5361137B2 |
Correction of widths obtained by measurement of a sample with the use of a scanning electron microscope is executed with greater precision. A standard sample for correction comprises a plurality of correction mark members, the respective...
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JP5359165B2 |
To measure warpage of a single-crystal substrate in a component sealed with a package material by diffracted X-rays through the package material without destroying the component. When the Bragg condition is satisfied when the rotation an...
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JP5357528B2 |
Disclosed is a semiconductor wafer testing apparatus that resolves the following problems which arise when semiconductor wafers become larger: (1) complexity of stage acceleration/deceleration control; (2) throughput reduction; and (3) i...
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JP5354395B2 |
Exposure is performed with a reticle installed in an exposure apparatus, and a measurement mark on the reticle is transferred onto a wafer so as to form a first transferred image of the measurement mark (step 212). Then, the wafer is rot...
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JP5350350B2 |
To provide an X-ray position measurement device for achieving high position measurement precision without increasing a cost.An X-ray position measurement device 10 includes: first movement means for moving an X-ray radiator 10a and an X-...
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JP5349978B2 |
To measure sizes with high accuracy without being affected by the factors of size variation difficult to prevent by only controlling an irradiation amount on an area-by-area basis of beam scanning. In this method and instrument, a positi...
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JP5338517B2 |
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JP5341788B2 |
To provide a non-destructive measurement fixture capable of simply and accurately performing non-destructive measurement from an internal wall side concerning a small inside diameter and the depth part of an existing long hollow tube, an...
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JP2013228330A |
To provide a film thickness measuring apparatus that can measure a film thickness in a non-contact manner with high accuracy by a simple method even when a value obtained by multiplying a refractive index by the film thickness is less th...
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JP5333107B2 |
To noncontactly and simply calculate a calorie of an object to be heated, and simply manage a calorie value in a heating apparatus. The heating apparatus includes: an object to be heated calorie calculating means 12 for noncontactly dete...
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JP5337086B2 |
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JP2013224961A |
To solve the problems, when size of a semiconductor wafer is increased, in an inspection device such as (1) complication of acceleration/deceleration control of a stage, (2) degradation of throughput and (3) vibration increase (resolutio...
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JP2013217887A |
To measure the level of liquid such as water staying in piping within a comparative short time by using a radiation source of an authentication apparatus with a display of a very small dose having no usage restrictions.In a method for me...
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JP5321815B2 |
To measure warping without destructing a package, on a plurality of respective monocrystal substrates stored in the package by being mutually laminated. A method includes: a step of irradiating the package with an X-ray; a step of select...
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JP5324534B2 |
The high magnification, high resolution and real-time property of an SEM image are realized when the electrical characteristics of an inspection object are measured, without affecting the electrical characteristics of the inspection obje...
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JP5321775B2 |
A pattern inspection method includes scanning a substrate on which patterns are formed with a charged beam, detecting a charged particle generated from the surface of the substrate, and then acquiring an image of the patterns; comparing ...
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JP5325681B2 |
The present invention provides a charged particle beam device in which the change of expansion/contraction of a specimen which is an observing object is restricted thereby eliminating position deviation of the observing object and signif...
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JP2013213687A |
To provide a sealant inspection method and a sealant inspection apparatus, which can inspect the state of a seal portion of an aircraft member non-destructively, and the aircraft member.The sealant inspection method for inspecting a seal...
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JP5314272B2 |
To provide an X-ray mass measurement device capable of calculating a physical quantity of a continuum before becoming a product even when a measured object is a continuum, previously discovering excess/deficiency of a physical quantity s...
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JP5319931B2 |
The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecti...
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JP5314676B2 |
A method and apparatus are disclosed for providing image data for constructing an image of a region of a three dimensional target object. The method includes the steps of providing incident radiation, via at least one detector detecting ...
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JP5319112B2 |
A method for inspection includes irradiating a sample using an X-ray beam, which is focused so as to define a spot on a surface of the sample. At least one of the sample and the X-ray beam is shifted so as to scan the spot along a scan p...
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JP5313794B2 |
To provide a layer height level detector for inhibiting an effect due to heat within an industrial furnace, and an effect on the detection accuracy due to attached dust, and the industrial furnace. The layer height level detector for det...
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JP5308624B2 |
A system and method for determining a cross sectional feature of a measured structural element having a sub-micron cross section, the cross section is defined by an intermediate section that is located between a first and a second traver...
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JP5313069B2 |
In a panoramic image construction technology a wide-range imaging area (EP) of semiconductor patterns is divided into a plurality of imaging areas (SEP), and joined a group of images, which are obtained by imaging the SEPs using an SEM, ...
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JP5313468B2 |
To provide a film thickness measuring method for improving the accuracy for measuring the film thickness of an insulator layer, having a film thickness of several to several tens of atomic layers, without impairing general-purpose proper...
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JP2013200319A |
To provide an electron microscope system for outputting contour information adapted to an actual pattern edge end of a sample.A local projection waveform is generated by projecting an electron microscope image in a tangential direction t...
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JP2013200299A |
To provide a roughness evaluation device and method capable of accurately measuring and evaluating roughness of an internal interface of a sample.The roughness evaluation device includes generation means 1 for generating an electromagnet...
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JP2013193305A |
To provide a technique for detecting positions of register marks formed on both surfaces of a recording medium with high precision.A printing section 8 prints a top register mark 33 and a reverse register mark 35 on a top surface 9a and ...
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JP5289665B2 |
A method for evaluating thin films comprises the steps of inputting measurement conditions, generating electron beams from an electron source to condense the electron beams to a specimen by a condenser lens, enlarging the electron beams ...
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