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JP6051301B2 |
When a scanning electron microscope is used to measure a superposition error between upper-layer and lower-layer patterns, an SN of the lower-layer pattern may often be lower, so that when simple frame adding processing is used, the addi...
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JP2016217816A |
To provide a pattern measurement program, method and device in which the influences of noise are small, and with which it is possible to properly measure way up a high-frequency component.The program includes the steps of: detecting elec...
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JP2016210501A |
To exclude a defective product in which positional deviation of objects to be packaged occurs without being restricted by size of a packaging material, in a packaging machine for packaging the objects to be packaged in the opaque packagi...
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JP6044704B2 |
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JP6043529B2 |
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JP6043735B2 |
Provided are an image evaluation method and an image evaluation apparatus to evaluate a two-dimensional shape and a change in shape of a pattern side wall of a semiconductor pattern based on a SEM image, thus estimating an exposure condi...
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JP6043528B2 |
An object of the present invention is to provide a pattern measuring apparatus which performs high-accuracy concavity/convexity determination (e.g., distinguishing between a line segment and space) while simultaneously reducing the dose ...
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JP2016205859A |
To provide a device for measuring the distance between conductor cores with which it is possible to accurately measure the distance between conductor cores even when a differential signal transmission cable is inclined.Provided is a devi...
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JP2016205951A |
To provide a film thickness measurement method and film thickness measurement device capable of easily and speedily acquiring the thickness of a thin film formed on a substrate using an XPS.A film thickness measurement method of a thin f...
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JP6038053B2 |
An pattern evaluation method includes a step of estimating imaging deviation allowed to evaluate an overlay position on one or more evaluation point candidates based on pattern layout information, a step of deciding one or more evaluatio...
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JP6040632B2 |
To provide a sample preparation method for improving throughput of thickness measurement and for precisely processing a sample based upon a measured thickness.A sample preparation method includes the steps of: acquiring a reflected elect...
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JP6034468B1 |
[Subject] A real-time non-contact non-destroying thickness measurement device using a terahertz wave which can measure thickness of a specimen is provided. [Means for Solution] Wavelength fixed laser 100 and wavelength sweep laser 200, M...
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JP6030602B2 |
The present invention discloses a millimeter wave holographic scan imaging apparatus for inspecting a human body. The apparatus includes a first millimeter wave transceiver device (40) comprising a first millimeter wave transceiver anten...
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JP6031857B2 |
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JP6027362B2 |
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JP6021764B2 |
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JP6018803B2 |
An error of an outline point due to a brightness fluctuation cannot be corrected by a simple method such as a method of adding a certain amount of offset. However, in recent years as the miniaturization of the pattern represented by a re...
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JP6018802B2 |
A dimension measuring apparatus for measuring a dimension between a first data contour which is an evaluation reference of a pattern to be evaluated and a second data contour which is the pattern to be evaluated generates first correspon...
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JP6004956B2 |
A pattern evaluation device of the present invention includes a model estimation unit that estimates a model caused by a manufacturing method on the basis of an inspection image, a deformation amount estimation unit that estimates a defo...
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JP6006768B2 |
The disclosure provides an apparatus for amplifying scattering intensity during tSAXS measurements. The apparatus includes an enhancement grating object (14) and a placement mechanism. The enhancement grating object is positioned within ...
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JP2016176689A |
To provide a displacement measurement method and device which measure the thickness of a target substance inside a dielectric substance not transmitting visible light, and the depth and height of a fault and a foreign body inside the tar...
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JP2016178037A |
To enable achievement of images of excellent visibility by removing noise components from a minute secondary charged particle detection signal from a minute pattern in a charged particle beam device.A charged particle beam device include...
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JP6002486B2 |
To provide a pattern measurement device for highly accurately measuring a pattern whose measurement start point or measurement end point is difficult to specify such as a curved closed graphic pattern.A pattern measurement device is conf...
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JP6001945B2 |
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JP6002480B2 |
The purpose of the present invention is to provide an overlay error measuring device which measures an overlay error with high accuracy even when a lower layer pattern is disposed under a thin film and a sufficient signal amount cannot b...
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JP2016173615A |
To provide a measurement system capable of easily reusing an identification surface which has been used in previous pattern matching.The measurement system has a storage for storing a matching identification surface for determining wheth...
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JP5996674B2 |
The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knif...
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JP5992188B2 |
To provide an extracting method of coal ash particles which bases on a reflected electron image of a sample containing several kinds of particles but not only on a luminance value in the reflected electron image and can isolate and deter...
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JP5993781B2 |
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JP5987781B2 |
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JP5986817B2 |
The purpose of the present invention is to provide an overlay error measuring device for correcting a pattern displacement other than an overlay error to thereby achieve high-precision overlay error measurement. To accomplish the aboveme...
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JP5978162B2 |
In order to reduce the amount of time it takes to collect images of defects, this defect inspection device is provided with the following: a read-out unit that reads out positions of defects in a semiconductor wafer that have already bee...
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JP5972536B2 |
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JP5970229B2 |
To provide a sample dimension measuring method for measuring and inspecting a high aspect pattern with high accuracy while suppressing beam irradiation amount, and to provide a charged particle beam apparatus.In the charged particle beam...
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JP5970300B2 |
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JP5967500B1 |
[Subject] In the method of carrying out X diffraction measurement of the same part over a long period of time, even if the intensity of the diffraction X-rays which occur by removing the subject surface becomes weak, measurement does not...
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JP5967394B2 |
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JP2016142685A |
To effectively reduce a manufacturing cost of a device.A terahertz device (10) includes: terahertz wave generation means (110) for generating a terahertz wave irradiating an object (500); voltage application means (210) for applying a pr...
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JP2016143651A |
To provide a novel inspection apparatus for inspecting the surface roughness of an inspection object.An inspection system 100 includes an electron source 101 generating an electron beam, a primary electron optical system 102 for introduc...
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JP2016139531A |
To provide a charged particle beam and a method therefor with which it is possible to accurately observe, inspect, and measure an actual sample shape for the problem that when observing, inspecting, and measuring a bottom on a pattern ha...
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JP2016139467A |
To allow for creation of a mixed image by mixing a plurality of images, detected by means of a plurality of detectors, while automatically adjusting the weighting factors when mixing (synthesizing) a plurality of images, while taking acc...
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JP5960502B2 |
To provide an X-ray inspection calibration method having sufficient reliability by suppressing an occurrence of erroneous determination and an error due to a deterioration in hardware in an X-ray inspection performed when inspecting a nu...
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JP5957357B2 |
Provided is a pattern inspecting and measuring device that decreases the influence of noise and the like and increases the reliability of an inspection or measurement result during inspection or measurement using the position of an edge ...
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JP5951223B2 |
The electrical charging by a primary electronic is inhibited to produce a clear edge contrast from an observation specimen (i.e., a specimen to be observed), whereby the shape of the surface of a sample can be measured with high accuracy...
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JP5948074B2 |
An image forming device is provided that is capable of forming a proper integrated signal even when an image or a signal waveform is acquired from a pattern having the possibility of preventing proper matching, such as a repetition patte...
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JP5946012B2 |
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JP5941704B2 |
The present invention aims at providing a pattern dimension measuring device that realizes the measurement of a dimension of a pattern difficult to set up a measurement box, or between patterns away from each other with high precision. I...
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JP5941782B2 |
An inspection device that performs pattern matching on a searched image performs matching between a template image of an inspection object and the searched image by using: a feature region extraction process unit that extracts a feature ...
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JP2016114473A |
To precisely identify a measurement error by contamination.An error evaluation method includes: a process of performing N scans of each of a plurality of areas set in a sample where a pattern is formed using an electron beam; a process o...
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JP5934309B2 |
The invention relates to a distance measuring device and a method for determining a distance, which uses a sensor in the form of a cavity resonator to determine a distance on a continuous basis and which can be used for a wide range of a...
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