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WO/2020/101998A1 |
A multilayer film (10) includes a substrate (12); a first magnetic layer (14) disposed on the substrate and a second magnetic layer (16) disposed on the first magnetic layer (14). The first magnetic layer (14) includes Fe(50-80)N(10-20)B...
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WO/2020/099846A1 |
A magnetic particle (30, 70) has a layered structure (6, 56) between a top surface of the particle and an opposed bottom surface of the particle. Layers of the structure include one or more nonmagnetic layer(s) and one or more magnetized...
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WO/2020/095360A1 |
This domain wall motion type magnetic recording element (100) is provided with: a domain wall motion layer (10) in which first layers (11) that contain a rare earth metal and second layers (12) that contain a transition metal are alterna...
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WO/2020/090719A1 |
A spin torque generating element 10 comprises: a conductive layer 1 supplied with a current Jc; an insulating layer 2 formed on a surface on one side of the conductive layer 1; and a ferromagnetic layer 3 formed on a surface on the other...
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WO/2020/090914A1 |
Provided is a CoPt-oxide-based in-plane magnetized film which has a magnetic coercive force Hc of 2.00 kOe or more and has remanent magnetization Mrt per unit area of 2.00 memu/cm2 or more. An in-plane magnetized film (10) for use as a h...
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WO/2020/087062A1 |
In some examples, a patterned magnetic core includes a first sub- score and at least one second sub-core. The first and second sub-cores are spaced apart by a gap, optionally filled with material of sufficiently low electrical conductivi...
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WO/2020/084157A1 |
The present invention relates to a heavy-metal-, rare-earth-element- and iron-free ferromagnetic electrical insulator thin film material transparent to visible light. The thin film material possesses a formula Αι+nxΤz1-xO3, where A is...
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WO/2020/066826A1 |
This sputtering target has (100-x)MgO-xCuO(0
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WO/2020/059542A1 |
Provided are a skyrmion circuit and a manufacturing method for a skyrmion circuit. This skyrmion circuit (1) includes a magnetic film (10) patterned with a circuit part (1A) in which skyrmions can exist, in which the skyrmions are propag...
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WO/2020/060035A1 |
The present invention relates to a magnetic field shielding sheet, a method for producing a magnetic field shielding sheet, and an antenna module using same, wherein the magnetic field shielding sheet is in the form of a roll and may pro...
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WO/2020/045655A1 |
Provided is a magnetoresistance effect element provided with a quadruple interface, the magnetoresistance effect element having a small resistance-area product RA, a large magnetoresistance ratio, and a large effective magnetic anisotrop...
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WO/2020/040082A1 |
The present invention addresses the problem of providing a Co-based alloy with which it is possible to produce a target exhibiting excellent toughness and to obtain a soft magnetic layer having a low saturation magnetic flux density. Wit...
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WO/2020/041582A1 |
Fabrication of a magnetoresistive device, comprising a magnetically fixed region (40) on at least one seed region (20, 25) on an electrically conductive region (15), involves forming a seed region (20'; 21), treating the seed region by e...
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WO/2020/040264A1 |
A Hall element (100) is provided with: a substrate (1); and a thin film (2) that serves as a magnetism sensing layer and that is provided on the substrate (1). The thin film (2) is formed from an amorphous ferromagnetic metal having a co...
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WO/2020/033399A1 |
A magnetized playing card having: a first component; and a second component that joins with the first component to form the magnetized playing card; the first component having: a front first component face; a back first component face; w...
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WO/2020/031460A1 |
This sputtering target contains at least 0.05 at% of Bi, wherein the total contained amount of metal oxides is 10-60 vol%, and the remaining portion includes Co and Pt.
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WO/2020/027268A1 |
In order to obtain an inductor element advantageous for miniaturization, an inductor element 10 according to an embodiment of the present disclosure is provided with a metal medium 2 in which ordered spins are spatially oriented so as to...
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WO/2020/009095A1 |
In order to provide a Ni-based alloy for a seed layer, the alloy enabling achievement of a seed layer that exhibits enhanced alignment to the (111) plane and that has a fine crystal grain size, a sputtering target which contains said all...
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WO/2019/244662A1 |
The present invention provides a magnetic storage element that has a multilayer structure which is composed of a fixed layer (102) that has a fixed magnetization direction, a storage layer (106) that has a reversible magnetization direct...
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WO/2019/232839A1 |
Provided are a ferromagnetic insulating material and a manufacturing method and use thereof. The ferromagnetic insulating material has a structural formula of BiFexOy, wherein x has a given value range of 2-3, and y has a given value ran...
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WO/2019/230351A1 |
This spin-orbit torque magnetoresistance effect element (101) is provided with a first ferromagnetic layer (1), a second ferromagnetic layer (2), a nonmagnetic layer (3) positioned between the first ferromagnetic layer and the second fer...
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WO/2019/223999A1 |
The invention relates to a method for reconfiguration of a vortex density in a rare earth manganate, to a non-volatile impedance switch having reconfigurable impedance, and to the use thereof as micro-inductance having a small footprint....
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WO/2019/219470A1 |
The invention relates to hard magnets, comprising an intermetallic compound having the general composition XaX'bYcZd wherein X and X' independently from one another are representative of a 3d transition metal with unpaired electrons; Y i...
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WO/2019/203454A1 |
A magnetic device according to the present invention comprises: a fixed layer having an in-plane magnetization direction; a free layer, which has an in-plane magnetization direction and is aligned so as to be vertically spaced apart from...
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WO/2019/187674A1 |
Provided is a magnetoresistive element capable of achieving stable storage at higher temperatures even when the device size of the magnetoresistive element is small and demonstrating higher thermostability. This magnetoresistive element ...
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WO/2019/187520A1 |
Provided is a sputtering target that can be used to form a buffer layer that, if a magnetic recording layer granular film is layered above a ruthenium underlayer, makes good separation of magnetic crystal particles in the magnetic record...
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WO/2019/181302A1 |
[Problem] The purpose of the present invention is to provide a soft magnetic thin film and the like having a high saturation magnetic flux density and a low coercivity. [Solution] A soft magnetic thin film having soft magnetic crystallin...
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WO/2019/163203A1 |
This spin orbit torque type magnetization rotational element comprises a spin orbit torque wiring extending in a first direction, and a first ferromagnetic layer layered on the spin orbit torque wiring. The spin orbit torque wiring conta...
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WO/2019/160080A1 |
According to the present invention, a magnetic material having a higher Curie temperature can be achieved. This magnetic material is made of Sr3-xAxOs1-yByO6 (-0.5≤x≤0.5, -0.5≤y≤0.5, A is an alkali metal or an alkali earth metal,...
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WO/2019/151746A1 |
An antenna module according to one embodiment of the present invention, comprises: a coil layer including a wound first coil; a shield layer disposed on the coil layer and including a plurality of sequentially stacked magnetic sheets; an...
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WO/2019/131394A1 |
According to the present invention, a tunnel magnetoresistive effect (TMR) element 11 that is able to properly operate in a high temperature environment, a high magnetic field environment and the like is provided with an exchange coupled...
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WO/2019/131392A1 |
A magnetic field application bias film 11 having high magnetic field resistance is provided with an exchange coupling film 10 having a permanent magnet layer 3 and an antiferromagnetic layer 4 layered upon the permanent magnet layer 3. T...
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WO/2019/131391A1 |
A magnetic field application bias film 11 having high magnetic field resistance is provided with an exchange coupling film 10 having a ferromagnetic layer 3 and an antiferromagnetic layer 4 layered upon the ferromagnetic layer 3. The ant...
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WO/2019/131393A1 |
Provided are: a position sensing element which is provided with an exchange coupled film that has a large exchange coupling magnetic field; and a position sensor which has good sensing accuracy in a high temperature environment. A positi...
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WO/2019/125382A1 |
An apparatus is provided which comprises: a magnet; a magnetoelectric structure adjacent to the magnet; a structure adjacent to the magnet, the structure to provide a spin orbit coupling effect; a first conductor adjacent to the magnetoe...
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WO/2019/125954A1 |
Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a...
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WO/2019/090060A3 |
A magnetoresistive stack (100) includes a free magnetic region (70), an intermediate region (60), and a fixed magnetic region (50), preferably comprising a reference region (58), a transition region (56), and a synthetic antiferromagneti...
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WO/2019/106063A1 |
The invention relates to a garnet-structured ferrite material having the following chemical formula: YaTRbBib'FecAldlneCafCugZrhViCojSikO12±γ, where TR is a rare earth or a combination of rare earths, TR not comprising Yttrium and ∘ ...
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WO/2019/092333A1 |
This permanent magnet comprises: - an antiferromagnetic layer (40), - a ferromagnetic layer (42) having: a first sub-layer (44, 48) made of a first type of ferromagnetic material, the first type of ferromagnetic material being an at leas...
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WO/2019/075481A1 |
Disclosed herein are devices, systems, and methods that provide improved tunneling magnetoresistance (TMR) through the use of innovative device structures and heterostructure layers therein. Particularly, two or more magnetic layers form...
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WO/2019/064972A1 |
This thermoelectric conversion element 10 comprises an anomalous Nernst material 11 exhibiting an anomalous Nernst effect, the anomalous Nernst material 11 containing at least an element exhibiting an inverse spin Hall effect, and the el...
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WO/2019/065690A1 |
According to the present invention, an exchange coupled film 10 that has a fixed magnetic layer for which a magnetic field (Hex) in which the magnetization direction thereof inverts is large, that is highly stable at high temperatures, a...
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WO/2019/064994A1 |
According to the present invention, an exchange coupled film 10 that has a fixed magnetic layer for which a magnetic field (Hex) in which the magnetization direction thereof inverts is large, that is highly stable at high temperatures, a...
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WO/2019/028079A3 |
The invention relates to magnetic thin films including a single magnetic layer of La(1-X)SrxMn03 deposited on a non-magnetic substrate. The invention further relates to devices comprising said magnetic thin films and methods of manufacture.
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WO/2019/049740A1 |
By utilizing, as a basic configuration, a combination between MgAl2O4 and an alloy containing Fe as the main component, the present invention provides a perpendicular magnetization film structure having high interface-induced magnetic an...
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WO/2019/034953A1 |
A magnetic film includes iron and copper distributed between opposing first and second major surfaces of the magnetic film. The copper has a first atomic concentration C1 at a first depth d1 from the first major surface and a peak second...
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WO/2019/034967A1 |
A magnetic film includes iron and copper distributed between opposing first and second major surfaces of the magnetic film. The copper has a first atomic concentration C1 at a first depth d1 from the first major surface and a peak second...
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WO/2019/008576A1 |
A method of manufacturing a security paper is presented. The method comprises: preparing a composition A containing a mixture of softwood and hardwood pulp, and preparing a mixture β of a refined pulp and magnetic wires having predeterm...
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WO/2018/236541A1 |
A frequency selective limiter (FSL) is provided having a transmission line structure with a tapered width. The FSL includes a substrate having a magnetic material, a signal (or center) conductor disposed on the substrate and first and se...
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WO/2018/222944A1 |
An optical device comprises a metasurface including a plurality of nanostructures. The nanostructures define a phase profile and a group delay profile at a design wavelength. The phase profile and the group delay profile determine and co...
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