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WO/2019/160080A1 |
According to the present invention, a magnetic material having a higher Curie temperature can be achieved. This magnetic material is made of Sr3-xAxOs1-yByO6 (-0.5≤x≤0.5, -0.5≤y≤0.5, A is an alkali metal or an alkali earth metal,...
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WO/2019/151746A1 |
An antenna module according to one embodiment of the present invention, comprises: a coil layer including a wound first coil; a shield layer disposed on the coil layer and including a plurality of sequentially stacked magnetic sheets; an...
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WO/2019/131394A1 |
According to the present invention, a tunnel magnetoresistive effect (TMR) element 11 that is able to properly operate in a high temperature environment, a high magnetic field environment and the like is provided with an exchange coupled...
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WO/2019/131392A1 |
A magnetic field application bias film 11 having high magnetic field resistance is provided with an exchange coupling film 10 having a permanent magnet layer 3 and an antiferromagnetic layer 4 layered upon the permanent magnet layer 3. T...
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WO/2019/131391A1 |
A magnetic field application bias film 11 having high magnetic field resistance is provided with an exchange coupling film 10 having a ferromagnetic layer 3 and an antiferromagnetic layer 4 layered upon the ferromagnetic layer 3. The ant...
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WO/2019/131393A1 |
Provided are: a position sensing element which is provided with an exchange coupled film that has a large exchange coupling magnetic field; and a position sensor which has good sensing accuracy in a high temperature environment. A positi...
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WO/2019/125382A1 |
An apparatus is provided which comprises: a magnet; a magnetoelectric structure adjacent to the magnet; a structure adjacent to the magnet, the structure to provide a spin orbit coupling effect; a first conductor adjacent to the magnetoe...
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WO/2019/125954A1 |
Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a...
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WO/2019/090060A3 |
A magnetoresistive stack (100) includes a free magnetic region (70), an intermediate region (60), and a fixed magnetic region (50), preferably comprising a reference region (58), a transition region (56), and a synthetic antiferromagneti...
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WO/2019/106063A1 |
The invention relates to a garnet-structured ferrite material having the following chemical formula: YaTRbBib'FecAldlneCafCugZrhViCojSikO12±γ, where TR is a rare earth or a combination of rare earths, TR not comprising Yttrium and ∘ ...
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WO/2019/092333A1 |
This permanent magnet comprises: - an antiferromagnetic layer (40), - a ferromagnetic layer (42) having: a first sub-layer (44, 48) made of a first type of ferromagnetic material, the first type of ferromagnetic material being an at leas...
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WO/2019/075481A1 |
Disclosed herein are devices, systems, and methods that provide improved tunneling magnetoresistance (TMR) through the use of innovative device structures and heterostructure layers therein. Particularly, two or more magnetic layers form...
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WO/2019/064972A1 |
This thermoelectric conversion element 10 comprises an anomalous Nernst material 11 exhibiting an anomalous Nernst effect, the anomalous Nernst material 11 containing at least an element exhibiting an inverse spin Hall effect, and the el...
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WO/2019/065690A1 |
According to the present invention, an exchange coupled film 10 that has a fixed magnetic layer for which a magnetic field (Hex) in which the magnetization direction thereof inverts is large, that is highly stable at high temperatures, a...
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WO/2019/064994A1 |
According to the present invention, an exchange coupled film 10 that has a fixed magnetic layer for which a magnetic field (Hex) in which the magnetization direction thereof inverts is large, that is highly stable at high temperatures, a...
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WO/2019/028079A3 |
The invention relates to magnetic thin films including a single magnetic layer of La(1-X)SrxMn03 deposited on a non-magnetic substrate. The invention further relates to devices comprising said magnetic thin films and methods of manufacture.
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WO/2019/049740A1 |
By utilizing, as a basic configuration, a combination between MgAl2O4 and an alloy containing Fe as the main component, the present invention provides a perpendicular magnetization film structure having high interface-induced magnetic an...
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WO/2019/034953A1 |
A magnetic film includes iron and copper distributed between opposing first and second major surfaces of the magnetic film. The copper has a first atomic concentration C1 at a first depth d1 from the first major surface and a peak second...
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WO/2019/034967A1 |
A magnetic film includes iron and copper distributed between opposing first and second major surfaces of the magnetic film. The copper has a first atomic concentration C1 at a first depth d1 from the first major surface and a peak second...
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WO/2019/008576A1 |
A method of manufacturing a security paper is presented. The method comprises: preparing a composition A containing a mixture of softwood and hardwood pulp, and preparing a mixture β of a refined pulp and magnetic wires having predeterm...
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WO/2018/236541A1 |
A frequency selective limiter (FSL) is provided having a transmission line structure with a tapered width. The FSL includes a substrate having a magnetic material, a signal (or center) conductor disposed on the substrate and first and se...
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WO/2018/222944A1 |
An optical device comprises a metasurface including a plurality of nanostructures. The nanostructures define a phase profile and a group delay profile at a design wavelength. The phase profile and the group delay profile determine and co...
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WO/2018/206591A1 |
The present invention relates to a method for tuning the magnetic coercivity of a nanoporous film, a device and uses thereof The method comprises: - providing a thick nanoporous film having a thickness above 10 nm and an average nanopore...
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WO/2018/203554A1 |
This magnetic element is formed of a magnetic material, wherein the magnetic material can generate skyrmions, and a defect is introduced at a position corresponding to each side of an approximate triangle in a plan view. In the magnetic ...
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WO/2018/198713A1 |
According to an embodiment of the invention, this magnetic element comprises a first magnetic layer and a first non-magnetic layer. In a state wherein substantially no voltage or magnetic field is applied to the first magnetic layer, the...
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WO/2018/194155A1 |
A magnetization control element (100) according to an embodiment of the present invention is provided with: a magnetization control layer (10) which includes a magnetoelectric material exhibiting a magnetoelectric effect; and a magnetic ...
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WO/2018/179961A1 |
According to this embodiment, a magnetic element includes a first layer and a second layer. The first layer contains a first element containing at least one selected from the group consisting of Fe, Co, and Ni and a second element contai...
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WO/2018/169629A1 |
Magneto-impedance (MI) sensors employing current confinement and exchange bias layer(s) for increased MI sensitivity are disclosed. MI sensors may be used as biosensors to detect biological materials. The sensing by the MI devices is bas...
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WO/2018/163575A1 |
[Problem] To provide a ferromagnetic tunnel junction element and a method for manufacturing the same with which it is possible to avoid increasing the element occupation area and the number of manufacturing steps, while also avoiding var...
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WO/2018/157859A1 |
A thin-film inductor (200) comprises multilayer magnetic thin films (211,212,213,214). The multilayer magnetic thin films at least comprise a first magnetic thin film and a second magnetic thin film that are adjacent, and the first magne...
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WO/2018/160286A1 |
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utiliz...
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WO/2018/155562A1 |
This magnetization reversal element is provided with: a ferromagnetic metal layer; and a spin orbit torque wire which extends in a first direction intersecting a stacking direction of the ferromagnetic metal layer and on one surface of w...
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WO/2018/140125A1 |
A perpendicular magnetic tunnel junction may include a free layer, a reference layer, and a barrier layer. The barrier layer may be arranged between the free layer and the reference layer. The barrier layer may include a first interface ...
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WO/2018/139276A1 |
The purposes of the present invention are to achieve a desired tunnel magnetoresistance (TMR) ratio by disposing a B absorption layer of sufficient thickness next to an upper CoFeB layer of a magnetic tunnel junction (MTJ), and subjectin...
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WO/2018/091879A1 |
Apparatus for generating spin waves comprising a body (102) of magnetic material and an elastic wave generator (120), wherein the body (102) has a surface (108) and the elastic wave generator (120) is arranged to transmit elastic waves s...
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WO/2018/084774A1 |
A spin oscillator device (1) comprising a first spin Hall effect nano-oscillator, SHNO (2), having an extended multilayered magnetic thin-film stack (2), wherein a nano-constriction, NC, (6) is provided in said magnetic film stack (2) pr...
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WO/2018/080589A1 |
An Fe-Al alloy magnetic thin film according to the present invention contains, in terms of atomic ratio, 0% to 35% (inclusive of 0%) of Co and 1.5% to 2% of Al. A [110] direction of a crystal contained in a material is perpendicular to a...
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WO/2018/061710A1 |
The purpose of the present invention is to provide a magnetoresistive effect element (10) having a larger magnetoresistive effect. A magnetoresistive effect element according to the present invention comprises a substrate (11), a first f...
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WO/2018/048281A1 |
A magnetic sheet according to an embodiment comprises: a first magnetic sheet portion comprising a first surface; a second magnetic sheet portion comprising a second surface that faces the first surface; and an attachment portion arrange...
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WO/2018/043702A1 |
This magnetoresistive effect element comprises: a first ferromagnetic metal layer; a second ferromagnetic metal layer; and a tunnel barrier layer that is arranged between the first ferromagnetic metal layer and the second ferromagnetic m...
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WO/2018/037777A1 |
This magnetoresistive element 10 is obtained by laminating a lower electrode 31, a first base layer 21A formed of a non-magnetic material, a storage layer 22 having perpendicular magnetic anisotropy, an intermediate layer 23, a magnetiza...
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WO/2018/030224A1 |
An exchange coupled film 10 of the present invention comprises an antiferromagnetic layer 2, a fixed magnetic layer 3, and a free magnetic layer 5 that are stacked. The antiferromagnetic layer 2 comprises a PtCr layer 2A and an XMn layer...
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WO/2018/029883A1 |
[Problem] To provide: an exchange-coupling film having a large magnetic field (Hex) in which the magnetic direction of a fixed magnetic layer inverts, and having high stability in high temperature conditions; and a magneto-resistive elem...
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WO/2018/021706A1 |
A nano-oscillation element according to one embodiment of the present invention comprises: a first fixed magnetic layer; a second fixed magnetic layer arranged on the first fixed magnetic layer; a free magnetic layer interposed between t...
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WO/2018/016522A1 |
The present invention realizes an electromagnetic absorber capable of good absorption of a plurality of types of electromagnetic waves of different frequencies in a high frequency band of at least the millimeter waveband. An electromagne...
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WO/2018/012668A1 |
The present invention provides a composite substrate for antenna module formation and a method for manufacturing the same, the composite substrate comprising: a first non-magnetic substrate having a first thin copper layer; a second non-...
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WO/2018/009115A1 |
The disclosure relates to a nanolaminated material of the formula (Mx ± β, M2y ± ɛ)2-δAl1 -αC1 ± ρ wherein M1 is Mo and M2 is selected from the group consisting of Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm and Lu. The M1 and M2 atom...
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WO/2017/222038A1 |
The purpose of the present invention is to provide a magnetoresistive element that has a high magnetic resistance (MR) ratio and a suitable device resistance (RA) for device applications. This magnetoresistive element has a structure in ...
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WO/2017/221896A1 |
The present invention improves the structure of a free magnetic layer of a tunnel magnetoresistance element, and achieves magnetoresistance characteristics having high linearity. A tunnel magnetoresistance element comprises a fixed magne...
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WO/2017/222588A1 |
An apparatus is provided which comprises: a current source; a bias tee having a first terminal coupled to the current source; a skyrmion spin oscillator (SSO) coupled to a second terminal of the bias tee; and a load coupled to a third te...
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