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WO/2021/002115A1 |
[Problem] To provide a random number generating unit and a computing system using the same, the random number generating unit comprising a magnetic tunnel junction element and enabling development of characteristics required for executio...
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WO/2020/252159A1 |
Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase h...
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WO/2020/223532A1 |
A magnetic tunnel junction is provided. The magnetic tunnel junction comprises an insulating tunnel barrier and a fixed ferromagnet layer adjacent the tunnel barrier. The fixed ferromagnet comprises a fixed magnetization along an easy ax...
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WO/2020/216627A1 |
A molecular magnetic material comprising salt molecules of a hexsacyanide tungsten anion complex of the formula: [WIV(CN)6(NN)]2-, a hexsacyanide tungsten anion complex of the formula: [WV(CN)6(NN)]-, wherein: W is a tungsten cation, CN ...
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WO/2020/191327A1 |
Embodiments generally relate to subwavelength antennas and, more particularly, extreme subwavelength antennas with high radiation efficiency. One embodiment and its derivatives achieve the objective of an extreme subwavelength dual acous...
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WO/2020/176154A1 |
A system for generating random noise includes a nanoscale magnetic device with two free ferromagnetic layers separated by a non-magnetic spacer layer. A current source directs a high current perpendicularly through the layers. The magnet...
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WO/2020/166141A1 |
Provided are a magnetic laminated film that is capable of improving write efficiency, and a magnetic memory element and magnetic memory that use the magnetic laminated film. The magnetic laminated film 1 is a laminated film for a magneti...
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WO/2020/161814A1 |
This spin-orbit torque-type magnetization rotating element (100) of the present application comprises: a first ferromagnetic layer (10); and a spin-orbit torque wiring (20) facing the first ferromagnetic layer and extending in a first di...
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WO/2020/158323A1 |
Provided is a magnetoresistance effect element comprising a first electrode (10), a fixed magnetic layer (120) in which the magnetization direction is fixed, a first insulating layer (130), a free magnetic layer (140) in which the magnet...
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WO/2020/160358A1 |
Magnetic memory devices are provided. The devices comprise a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer composed of a doped semiconductor (instead of an insulator or a dielectric) between the firs...
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WO/2020/137558A1 |
The present invention provides an exchange coupling film (10) in which a magnetic field (Hex) is high, the magnetic field being such that the orientation of magnetism of a fixed magnetic layer is reversed, and which has exceptional ferro...
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WO/2020/128018A1 |
A MEMS system comprises a first permanent-magnetic microstructure (10) and a second permanent-magnetic microstructure (15). The first permanent-magnetic microstructure (10) is movable in a first direction (IOv). The second permanent-magn...
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WO/2020/110899A1 |
A Co-based amorphous magnetic thin strip (1) for a magnetic sensor is made of a Co-based amorphous magnetic thin strip having a width W of 1 mm or less, a length L of 6-100 mm inclusive, an L/W ratio of 20-1000 inclusive, a strip thickne...
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WO/2020/110360A1 |
The purpose of the present invention is to provide: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device, each of w...
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WO/2020/110893A1 |
Provided is a magnetic alloy material which comprises metallic elements as main components and has a higher spin moment than iron-cobalt alloys. The magnetic alloy material is characterized by comprising iron and cobalt as main component...
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WO/2020/101998A1 |
A multilayer film (10) includes a substrate (12); a first magnetic layer (14) disposed on the substrate and a second magnetic layer (16) disposed on the first magnetic layer (14). The first magnetic layer (14) includes Fe(50-80)N(10-20)B...
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WO/2020/099846A1 |
A magnetic particle (30, 70) has a layered structure (6, 56) between a top surface of the particle and an opposed bottom surface of the particle. Layers of the structure include one or more nonmagnetic layer(s) and one or more magnetized...
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WO/2020/095360A1 |
This domain wall motion type magnetic recording element (100) is provided with: a domain wall motion layer (10) in which first layers (11) that contain a rare earth metal and second layers (12) that contain a transition metal are alterna...
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WO/2020/090719A1 |
A spin torque generating element 10 comprises: a conductive layer 1 supplied with a current Jc; an insulating layer 2 formed on a surface on one side of the conductive layer 1; and a ferromagnetic layer 3 formed on a surface on the other...
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WO/2020/090914A1 |
Provided is a CoPt-oxide-based in-plane magnetized film which has a magnetic coercive force Hc of 2.00 kOe or more and has remanent magnetization Mrt per unit area of 2.00 memu/cm2 or more. An in-plane magnetized film (10) for use as a h...
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WO/2020/087062A1 |
In some examples, a patterned magnetic core includes a first sub- score and at least one second sub-core. The first and second sub-cores are spaced apart by a gap, optionally filled with material of sufficiently low electrical conductivi...
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WO/2020/084157A1 |
The present invention relates to a heavy-metal-, rare-earth-element- and iron-free ferromagnetic electrical insulator thin film material transparent to visible light. The thin film material possesses a formula Αι+nxΤz1-xO3, where A is...
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WO/2020/066826A1 |
This sputtering target has (100-x)MgO-xCuO(0
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WO/2020/059542A1 |
Provided are a skyrmion circuit and a manufacturing method for a skyrmion circuit. This skyrmion circuit (1) includes a magnetic film (10) patterned with a circuit part (1A) in which skyrmions can exist, in which the skyrmions are propag...
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WO/2020/060035A1 |
The present invention relates to a magnetic field shielding sheet, a method for producing a magnetic field shielding sheet, and an antenna module using same, wherein the magnetic field shielding sheet is in the form of a roll and may pro...
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WO/2020/045655A1 |
Provided is a magnetoresistance effect element provided with a quadruple interface, the magnetoresistance effect element having a small resistance-area product RA, a large magnetoresistance ratio, and a large effective magnetic anisotrop...
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WO/2020/040082A1 |
The present invention addresses the problem of providing a Co-based alloy with which it is possible to produce a target exhibiting excellent toughness and to obtain a soft magnetic layer having a low saturation magnetic flux density. Wit...
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WO/2020/041582A1 |
Fabrication of a magnetoresistive device, comprising a magnetically fixed region (40) on at least one seed region (20, 25) on an electrically conductive region (15), involves forming a seed region (20'; 21), treating the seed region by e...
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WO/2020/040264A1 |
A Hall element (100) is provided with: a substrate (1); and a thin film (2) that serves as a magnetism sensing layer and that is provided on the substrate (1). The thin film (2) is formed from an amorphous ferromagnetic metal having a co...
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WO/2020/033399A1 |
A magnetized playing card having: a first component; and a second component that joins with the first component to form the magnetized playing card; the first component having: a front first component face; a back first component face; w...
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WO/2020/031460A1 |
This sputtering target contains at least 0.05 at% of Bi, wherein the total contained amount of metal oxides is 10-60 vol%, and the remaining portion includes Co and Pt.
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WO/2020/027268A1 |
In order to obtain an inductor element advantageous for miniaturization, an inductor element 10 according to an embodiment of the present disclosure is provided with a metal medium 2 in which ordered spins are spatially oriented so as to...
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WO/2020/009095A1 |
In order to provide a Ni-based alloy for a seed layer, the alloy enabling achievement of a seed layer that exhibits enhanced alignment to the (111) plane and that has a fine crystal grain size, a sputtering target which contains said all...
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WO/2019/244662A1 |
The present invention provides a magnetic storage element that has a multilayer structure which is composed of a fixed layer (102) that has a fixed magnetization direction, a storage layer (106) that has a reversible magnetization direct...
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WO/2019/232839A1 |
Provided are a ferromagnetic insulating material and a manufacturing method and use thereof. The ferromagnetic insulating material has a structural formula of BiFexOy, wherein x has a given value range of 2-3, and y has a given value ran...
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WO/2019/230351A1 |
This spin-orbit torque magnetoresistance effect element (101) is provided with a first ferromagnetic layer (1), a second ferromagnetic layer (2), a nonmagnetic layer (3) positioned between the first ferromagnetic layer and the second fer...
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WO/2019/223999A1 |
The invention relates to a method for reconfiguration of a vortex density in a rare earth manganate, to a non-volatile impedance switch having reconfigurable impedance, and to the use thereof as micro-inductance having a small footprint....
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WO/2019/219470A1 |
The invention relates to hard magnets, comprising an intermetallic compound having the general composition XaX'bYcZd wherein X and X' independently from one another are representative of a 3d transition metal with unpaired electrons; Y i...
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WO/2019/203454A1 |
A magnetic device according to the present invention comprises: a fixed layer having an in-plane magnetization direction; a free layer, which has an in-plane magnetization direction and is aligned so as to be vertically spaced apart from...
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WO/2019/187674A1 |
Provided is a magnetoresistive element capable of achieving stable storage at higher temperatures even when the device size of the magnetoresistive element is small and demonstrating higher thermostability. This magnetoresistive element ...
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WO/2019/187520A1 |
Provided is a sputtering target that can be used to form a buffer layer that, if a magnetic recording layer granular film is layered above a ruthenium underlayer, makes good separation of magnetic crystal particles in the magnetic record...
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WO/2019/181302A1 |
[Problem] The purpose of the present invention is to provide a soft magnetic thin film and the like having a high saturation magnetic flux density and a low coercivity. [Solution] A soft magnetic thin film having soft magnetic crystallin...
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WO/2019/163203A1 |
This spin orbit torque type magnetization rotational element comprises a spin orbit torque wiring extending in a first direction, and a first ferromagnetic layer layered on the spin orbit torque wiring. The spin orbit torque wiring conta...
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WO/2019/160080A1 |
According to the present invention, a magnetic material having a higher Curie temperature can be achieved. This magnetic material is made of Sr3-xAxOs1-yByO6 (-0.5≤x≤0.5, -0.5≤y≤0.5, A is an alkali metal or an alkali earth metal,...
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WO/2019/151746A1 |
An antenna module according to one embodiment of the present invention, comprises: a coil layer including a wound first coil; a shield layer disposed on the coil layer and including a plurality of sequentially stacked magnetic sheets; an...
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WO/2019/131394A1 |
According to the present invention, a tunnel magnetoresistive effect (TMR) element 11 that is able to properly operate in a high temperature environment, a high magnetic field environment and the like is provided with an exchange coupled...
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WO/2019/131392A1 |
A magnetic field application bias film 11 having high magnetic field resistance is provided with an exchange coupling film 10 having a permanent magnet layer 3 and an antiferromagnetic layer 4 layered upon the permanent magnet layer 3. T...
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WO/2019/131391A1 |
A magnetic field application bias film 11 having high magnetic field resistance is provided with an exchange coupling film 10 having a ferromagnetic layer 3 and an antiferromagnetic layer 4 layered upon the ferromagnetic layer 3. The ant...
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WO/2019/131393A1 |
Provided are: a position sensing element which is provided with an exchange coupled film that has a large exchange coupling magnetic field; and a position sensor which has good sensing accuracy in a high temperature environment. A positi...
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WO/2019/125382A1 |
An apparatus is provided which comprises: a magnet; a magnetoelectric structure adjacent to the magnet; a structure adjacent to the magnet, the structure to provide a spin orbit coupling effect; a first conductor adjacent to the magnetoe...
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