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WO/2012/014132 |
The invention relates to a writeable magnetic element, comprising a stack of layers having a magnetic writing layer, characterised in that the stack comprises a central layer (13, 53, 90) made of at least one magnetic material having a d...
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WO/2012/011294 |
Disclosed is a non-magnetic material dispersion-type ferromagnetic material sputtering target in which non-magnetic material particles comprising oxides are dispersed in a metal having a composition containing 20 mol% or less of Cr, and ...
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WO/2011/154477 |
The present invention relates to a spin transfer oscillator (30) comprising a magnetic stack (E) including at least two magnetic layers (32, 34), at least one of said two magnetic layers, referred to as the oscillating layer (32), has va...
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WO/2011/152333 |
Provided is a Bi-substituted rare earth iron garnet single crystal, which has a composition represented by R3-xBixFe5-wAwO12 (R must contain Gd, and may optionally contain at least one rare earth element selected from a group consisting ...
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WO/2011/149366 |
A method for preparing magnetic materials is disclosed. The magnetic materials are prepared by implanting low energy magnetic ions into a substrate and annealing with a charged particle beam. Magnetic materials comprising magnetic nanocl...
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WO/2011/148944 |
Disclosed is a thin film magnetic device which comprises a magnetic layer, an alcohol etchable layer, and a factor barrier layer. The magnetic layer is provided on top of a substrate. The alcohol etchable layer is provided on the magneti...
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WO/2011/128585 |
The present invention relates to a method for manufacturing particles such as magnetic micro- or nanoparticles. Said manufacturing method comprises the following steps: depositing a layer of a first sacrificial material on a substrate; d...
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WO/2011/120495 |
The invention relates to a domain-structured ferroic element, a method and an apparatus for generating and for controlling the electrical conductivity of the domain walls at room temperature in these elements and applications of the elem...
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WO/2011/114921 |
A method of feeding, as a grease, a grease composition for greasing bearings, said grease composition comprising 35-85 wt% of a fluorinated grease and 15-65 wt% of a fluorinated organic solvent, which comprises spraying said grease compo...
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WO/2011/093252 |
Disclosed is a magnetoresistive effect element which uses a vertically magnetized material and has a high TMR ratio. Intermediate layers (31, 32) are inserted on the outer sides of a structure that consists of a CoFeB layer (41), an MgO ...
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WO/2011/088375 |
A magnetic tunnel junction (MTJ) storage element (300) and method of forming the MTJ are disclosed. The magnetic tunnel junction (MTJ) storage element includes a pinned layer (206, 210), a barrier layer (212), a free layer (214) and a co...
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WO/2011/088375 |
A magnetic tunnel junction (MTJ) storage element and method of forming the MTJ are disclosed. The magnetic tunnel junction (MTJ) storage element includesa pinned layer, a barrier layer, a free layer and a composite hardmask or top electr...
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WO/2011/072498 |
A magnetoresistive thin film material with extremely high sensitivity and preparation method thereof are provided. The film with the structure of buffer layer/MgO/NiFe/MgO/protective layer is prepared by annealing at a high temperature i...
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WO/2011/070850 |
Disclosed is a sputtering target comprising an oxide phase dispersed in a Co or Co alloy phase. The sputtering target comprises: a Co-containing metal matrix phase; and a phase containing SiO2 and having an oxide dispersed therein in an ...
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WO/2011/066579 |
Disclosed is an electronic device manufacturing process including depositing a bottom electrode layer (711). Then an electronic device (721) is fabricated on the bottom electrode layer. Patterning of the bottom electrode layer is perform...
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WO/2011/066579 |
An electronic device manufacturing process includes depositing a bottom electrode layer. Then an electronic device is fabricated on the bottom electrode layer. Patterning of the bottom electrode layer is performed after fabricating the e...
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WO/2011/062005 |
Disclosed is a ferromagnetic tunnel junction element which is capable of reducing the current value necessary for writing both in a magnetic field writing type MRAM and in a spin injection magnetization reversal type MRAM. Specifically d...
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WO/2011/051498 |
Magnetic setting member for a wristwatch movement, comprising: a balance (1); permanent magnets (2, 10) for bringing said balance into at least one rest position; and an escapement (5, 6) for transmitting pulses to the balance in order t...
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WO/2011/048343 |
The invention relates to a method for producing a magnetophotonic crystal (100) characterised in that said method includes the following steps: producing a photonic crystal in a first layer (102); producing a magneto-optical crystal in a...
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WO/2011/039001 |
The invention relates to a transformer core or transformer sheet and a method for the production thereof. According to the invention, the transformer sheet (and the transformer core) comprises magnetically soft layers (22) and separator ...
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WO/2011/029629 |
The invention relates to a method for producing an electric component comprising at least two electric contacts and nanoparticles which are arranged on a substrate and which are made of an electrically conductive material, nanoparticles ...
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WO/2011/016399 |
Disclosed are a magnetostrictive film which can exhibit excellent magnetostrictive properties at around a zero field; and a process for producing the magnetostrictive film. The magnetostrictive film comprises a metal glass film which is ...
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WO/2011/008614 |
A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning la...
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WO/2011/001068 |
The invention relates to a method for changing the direction of magnetization in a top layer (2) including a ferromagnetic material, characterized in that: a) the top layer (2) is placed over a bottom layer (3) that is not magnetically c...
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WO/2011/001746 |
Provided are a magnetic memory element which enables a reduction in current density at the time of switching without impairing the reliabilities of read endurance, retention performance, and so on, and a driving method therefor. Specific...
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WO/2010/150853 |
Disclosed are: a process for producing a magnetic thin film having an insulating property, capable of acting as a permanent magnet, and capable of exhibiting improved remanent magnetization compared to the conventional magnetic thin film...
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WO/2010/143602 |
Disclosed is a soft magnetic Co-Fe-Ni alloy for a perpendicular magnetic recording medium, which has excellent saturation magnetic flux density, amorphousness, corrosion resistance and hardness. The Co-Fe-Ni alloy contains, in at%, 70-92...
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WO/2010/143370 |
The crystal c-axis orientations of a magnetic layer in the vicinity of the two opposing junction wall surfaces of a magnetoresistive element are aligned in the directions substantially perpendicular to the junction wall surfaces. A magne...
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WO/2010/144836 |
A magnetic tunneling junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, an apparatus is disclosed that includes an MTJ device. The MTJ device includes a free layer and a spin torque enhancing layer. Th...
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WO/2010/137679 |
Disclosed is a magneto-resistance effect element with a high TMR ratio, to which a perpendicular magnetization material is applied. Laminated ferri-structures (51, 52) each composed of a perpendicular magnetization magnetic layer (21, 22...
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WO/2010/136527 |
The present invention relates to a magnetic device (200) comprising a reference magnetic layer (201) with a fixed magnetisation direction either aligned with the plane of the layer (201) or perpendicular to the plane of the layer (201), ...
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WO/2010/134435 |
Provided is a ferromagnetic tunnel junction structure characterized by using an MgO barrier and using a Co2FeAl full-Heusler alloy as any of ferromagnetic layers. The ferromagnetic tunnel junction structure is further characterized in th...
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WO/2010/126854 |
A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell in...
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WO/2010/113791 |
Disclosed is a magnetic sheet which is obtained by forming a high-resistance soft magnetic film on a substrate by sputtering, said film having both high resistance and good soft magnetic characteristics. Specifically disclosed is a magne...
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WO/2010/107098 |
Provided is a method for evaluating the properties of a ferrite with which it is possible to continuously measure changes in magnetic properties that accompany changes in ferrite composition by preparing one sample only. A ferrite thin f...
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WO/2010/101862 |
A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material (112) on a free layer (110) of a magnetic tunneling junction structure to form the ca...
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WO/2010/074171 |
A sputtering target characterized by comprising: either cobalt and platinum or cobalt, chromium, and platinum; SiO2 and/or TiO2; and Co3O4 and/or CoO. By conducting sputtering using the sputtering target, a magnetic recording film havin...
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WO/2010/073790 |
Provided are magnetic memory elements that have 4F2 size memory cells that realize cross-point memory. In a magnetic memory element (100), a first magnetic layer (22), a third magnetic layer (spin polarized layer) (27), an intermediate l...
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WO/2010/067520 |
Disclosed are a magnetoresistance effect element equipped with an magnesium oxide passivation layer, and a high-speed, ultra-low power consumption nonvolatile memory using said element. A tunnel magnetoresistance effect (TMR) film compri...
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WO/2010/066976 |
According to this method for producing a magnetic tunnel junction, a film (4) of a dielectric capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films (1, 3). The dielectric constituting ...
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WO/2010/065619 |
Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference lay...
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WO/2010/064564 |
A magnetoresistive element having an MR ratio higher than those of prior arts. The magnetoresistive element is provided with a substrate (11), a first ferromagnetic layer (123) formed on top of the substrate (11), a tunnel barrier layer ...
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WO/2010/055597 |
Provided is a manufacturing method for a body with a magnetic film attached where a magnetic film is affixed to a base. The manufacturing method comprises a step of preparing the base and a step of forming a magnetic film composed of alt...
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WO/2010/055238 |
The present invention relates to a process for fabricating antiferromagnetic films, and more particularly those that are used in spintronics. The process according to the invention comprises the following steps: deposition (1) on a subst...
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WO/2010/053713 |
A magnetic memory cell (50) including a soft magnetic layer (104, 204, 254, 304, 354) and a coupling layer (106, 206, 256, 306, 356), and methods of operating the memory cell (50) are provided. The memory cell (50) includes a stack (52, ...
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WO/2010/053048 |
Disclosed is a Co-Fe alloy for soft magnetic films used in perpendicular magnetic recording media, etc., which maintains high soft magnetic properties and has excellent weather resistance. Disclosed is a Co-Fe alloy for soft magnetic fil...
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WO/2010/046614 |
The present invention relates to a magnetic actuation method according to which a magnetised mobile (4) is directed by means of at least one magnetic element (2, 2a, 2b) placed opposite said magnetised mobile, characterised in that the p...
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WO/2010/039423 |
Spin current generators (100, 200, 300) and systems and methods for employing spin current generators (100, 200, 300). A spin current generator (100, 200, 300) may be configured to generate a spin current polarized in one direction (116,...
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WO/2010/032574 |
Provided is a nonvolatile memory of a low power consumption type using a electric field write-in magnetic recording element. A multiferroic layer (301) is arranged adjacent to a magnetic recording layer (2002). An electric field is appl...
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WO/2010/032527 |
Disclosed is a magnetoresistive effect film (2) having a simpler structure than the conventional magnetoresistive effect films. The magnetoresistive effect film (2) has a structure wherein a half-metallic antiferromagnetic layer (21) com...
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