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WO/2018/169629A1 |
Magneto-impedance (MI) sensors employing current confinement and exchange bias layer(s) for increased MI sensitivity are disclosed. MI sensors may be used as biosensors to detect biological materials. The sensing by the MI devices is bas...
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WO/2018/163575A1 |
[Problem] To provide a ferromagnetic tunnel junction element and a method for manufacturing the same with which it is possible to avoid increasing the element occupation area and the number of manufacturing steps, while also avoiding var...
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WO/2018/157859A1 |
A thin-film inductor (200) comprises multilayer magnetic thin films (211,212,213,214). The multilayer magnetic thin films at least comprise a first magnetic thin film and a second magnetic thin film that are adjacent, and the first magne...
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WO/2018/160286A1 |
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utiliz...
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WO/2018/155562A1 |
This magnetization reversal element is provided with: a ferromagnetic metal layer; and a spin orbit torque wire which extends in a first direction intersecting a stacking direction of the ferromagnetic metal layer and on one surface of w...
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WO/2018/140125A1 |
A perpendicular magnetic tunnel junction may include a free layer, a reference layer, and a barrier layer. The barrier layer may be arranged between the free layer and the reference layer. The barrier layer may include a first interface ...
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WO/2018/139276A1 |
The purposes of the present invention are to achieve a desired tunnel magnetoresistance (TMR) ratio by disposing a B absorption layer of sufficient thickness next to an upper CoFeB layer of a magnetic tunnel junction (MTJ), and subjectin...
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WO/2018/091879A1 |
Apparatus for generating spin waves comprising a body (102) of magnetic material and an elastic wave generator (120), wherein the body (102) has a surface (108) and the elastic wave generator (120) is arranged to transmit elastic waves s...
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WO/2018/084774A1 |
A spin oscillator device (1) comprising a first spin Hall effect nano-oscillator, SHNO (2), having an extended multilayered magnetic thin-film stack (2), wherein a nano-constriction, NC, (6) is provided in said magnetic film stack (2) pr...
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WO/2018/080589A1 |
An Fe-Al alloy magnetic thin film according to the present invention contains, in terms of atomic ratio, 0% to 35% (inclusive of 0%) of Co and 1.5% to 2% of Al. A [110] direction of a crystal contained in a material is perpendicular to a...
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WO/2018/061710A1 |
The purpose of the present invention is to provide a magnetoresistive effect element (10) having a larger magnetoresistive effect. A magnetoresistive effect element according to the present invention comprises a substrate (11), a first f...
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WO/2018/048281A1 |
A magnetic sheet according to an embodiment comprises: a first magnetic sheet portion comprising a first surface; a second magnetic sheet portion comprising a second surface that faces the first surface; and an attachment portion arrange...
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WO/2018/043702A1 |
This magnetoresistive effect element comprises: a first ferromagnetic metal layer; a second ferromagnetic metal layer; and a tunnel barrier layer that is arranged between the first ferromagnetic metal layer and the second ferromagnetic m...
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WO/2018/037777A1 |
This magnetoresistive element 10 is obtained by laminating a lower electrode 31, a first base layer 21A formed of a non-magnetic material, a storage layer 22 having perpendicular magnetic anisotropy, an intermediate layer 23, a magnetiza...
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WO/2018/030224A1 |
An exchange coupled film 10 of the present invention comprises an antiferromagnetic layer 2, a fixed magnetic layer 3, and a free magnetic layer 5 that are stacked. The antiferromagnetic layer 2 comprises a PtCr layer 2A and an XMn layer...
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WO/2018/029883A1 |
[Problem] To provide: an exchange-coupling film having a large magnetic field (Hex) in which the magnetic direction of a fixed magnetic layer inverts, and having high stability in high temperature conditions; and a magneto-resistive elem...
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WO/2018/021706A1 |
A nano-oscillation element according to one embodiment of the present invention comprises: a first fixed magnetic layer; a second fixed magnetic layer arranged on the first fixed magnetic layer; a free magnetic layer interposed between t...
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WO/2018/016522A1 |
The present invention realizes an electromagnetic absorber capable of good absorption of a plurality of types of electromagnetic waves of different frequencies in a high frequency band of at least the millimeter waveband. An electromagne...
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WO/2018/012668A1 |
The present invention provides a composite substrate for antenna module formation and a method for manufacturing the same, the composite substrate comprising: a first non-magnetic substrate having a first thin copper layer; a second non-...
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WO/2018/009115A1 |
The disclosure relates to a nanolaminated material of the formula (Mx ± β, M2y ± ɛ)2-δAl1 -αC1 ± ρ wherein M1 is Mo and M2 is selected from the group consisting of Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm and Lu. The M1 and M2 atom...
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WO/2017/222038A1 |
The purpose of the present invention is to provide a magnetoresistive element that has a high magnetic resistance (MR) ratio and a suitable device resistance (RA) for device applications. This magnetoresistive element has a structure in ...
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WO/2017/221896A1 |
The present invention improves the structure of a free magnetic layer of a tunnel magnetoresistance element, and achieves magnetoresistance characteristics having high linearity. A tunnel magnetoresistance element comprises a fixed magne...
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WO/2017/222588A1 |
An apparatus is provided which comprises: a current source; a bias tee having a first terminal coupled to the current source; a skyrmion spin oscillator (SSO) coupled to a second terminal of the bias tee; and a load coupled to a third te...
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WO/2017/208576A1 |
This magnetic memory element (100) is provided with: a conductive layer which contains a heavy metal layer (10) containing a 5d transition metal; a first ferromagnetic layer (20) which is adjacent to the conductive layer and contains a f...
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WO/2017/210155A1 |
An iron-based magnetic thin film comprising from 0% to 25% of aluminum in terms of atomic ratio; wherein the iron-based magnetic thin film comprises a plurality of crystals having an average crystallite size of 100 Å or less; the iron-...
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WO/2017/204708A1 |
The disclosure relates to a nanolaminated material of the formula (M1x ± β,M2y ± ɛ)2-δA1-αC1 ± ρ wherein M1 is a first transition metal and M2 is a second transition metal. The M1 and M2 atoms are chemically ordered in relation t...
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WO/2017/179422A1 |
A rare earth thin film magnet which contains Nd, Fe and B as essential components, and which is characterized in that: an Nd-Fe-B base film having a composition in which the Nd content is higher than that of the stoichiometric compositio...
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WO/2017/169291A1 |
[Problem] To make it possible to further improve the magnetoresistance change rate without deteriorating reliability as an element. [Solution] Provided is a magnetoresistive element that is provided with: a storage layer wherein the magn...
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WO/2017/165058A1 |
A seed layer stack (25) in a magnetic tunnel junction (MTJ) with a smooth top surface is formed by sputter deposition of alternating layers of Ni (26) and X (27), wherein X is one of Mo, Ru, Nb, Zr, Rh, W, Os, Ir, and Hf. An uppermost Ni...
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WO/2017/154653A1 |
A rare-earth thin-film magnet which includes Nd, Fe, and B as essential components, characterized by including an Si base having an oxide film present on a surface thereof, an Nd underlying film formed as a first layer over the Si base, ...
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WO/2017/153883A1 |
The present disclosure concerns a magnetoresistive element (1) comprising: a storage layer (21) having a first storage magnetostriction; a sense layer (23) having a first sense magnetostriction; a barrier layer (22) between and in contac...
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WO/2017/149874A1 |
A magnetoresistive element 10 is provided with: a first laminated structure 20 having a first surface 20A, and a second surface 20B on the reverse side of the first surface 20A; and a second laminated structure 30, which is formed by lam...
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WO/2017/150524A1 |
A film which is composed of a non-magnetic material and a magnetic metal containing Fe and Pt, and which is characterized by additionally containing Mg and having a composition represented by (Fe1-αPtα)1-βMgβ (wherein α and β are n...
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WO/2017/141557A1 |
A sputtering target or a film that is characterized by having 0.1-10mol% of an oxide of one or more elements selected from Ca, K, Na, Pb, and Zn, 45mol% or less of Cr, and 45mol% or less of Pt, the remainder comprising Co. The present in...
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WO/2017/141558A1 |
A sputtering target or a film that is characterized by having 0.1-10mol% of an oxide comprising one or more compounds selected from FeO, Fe3O4, K2O, Na2O, PbO, and ZnO, and 5-70mol% of Pt, the remainder comprising Fe. The present inventi...
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WO/2017/141999A1 |
Heat resistance of a tunnel magnetic resistance element is improved, and excellent magnetic resistance characteristics are acquired after heat treatment in a magnetic field at higher temperatures. A free magnetic layer (4) has: a ferroma...
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WO/2017/139821A1 |
The invention relates to a wet chemical method for coating metal surfaces with spin transition compounds by gradually applying components of the spin transition compound to the surface to be coated, characterized in that a) the metal sur...
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WO/2017/115995A1 |
The present invention relates to a magnetic shielding block for a wireless power receiver, and a method of manufacturing same. A method of manufacturing a magnetic shielding block according to an embodiment of the present invention may c...
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WO/2017/111688A1 |
A spin oscillator device (NCI) comprising a first spin torque oscillator, STO (2), having an extended multilayered magnetic thin-film stack (2), wherein a nano-contact, NC, (6) is provided on said magnetic film stack (2) providing an NC-...
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WO/2017/110834A1 |
[Problem] To provide a spintronic element which is capable of preventing deterioration of magnetic characteristics due to outward diffusion of boron, thereby having excellent magnetic characteristics, and which is capable of preventing v...
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WO/2017/089575A1 |
One subject of the invention is a ferrite material of garnet structure with very low saturation magnetization characterized in that it corresponds to the following chemical formula: YaTRbBib'FecAldlneCafCugZrhViCOjSikO12±γ with TR: a r...
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WO/2017/091310A1 |
A seed layer stack (24) with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer (22) on a seed layer (21) such as Mg where the seed layer has a resputtering rate 2 to 30X tha...
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WO/2017/074104A1 |
Provided are a magnetic field shield sheet for wireless power transmission and a wireless power receiving module comprising the same. A magnetic field shield sheet for wireless power transmission according to one exemplary embodiment of ...
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WO/2017/061773A1 |
A magnetic sheet is provided. A magnetic sheet according to an embodiment of the present invention comprises: a magnetic layer formed of fragments of a magnetic body which are crushed in order to improve the flexibility of a sheet; and a...
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WO/2017/057972A1 |
A magnetic shielding unit for magnetic security transmission is provided. The magnetic shielding unit for magnetic security transmission, according to an embodiment of the present invention, has a magnetic shielding layer formed of fragm...
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WO/2017/048493A1 |
Magnetic Tunnel Junction (MTJ) devices particularly suited for efficient spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) are disclosed. In one aspect, a MTJ structure with a reduced thickness first pinned layer...
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WO/2017/034564A1 |
Described is an apparatus which comprises: a first ferromagnetic (FM) layer with magneto-strictive (MS) property; a layer operable to exert strain on the first FM layer; and a first anti-FM layer coupled to the layer and operable to exer...
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WO/2017/029976A1 |
The present invention provides an electronic device that is provided with: a first driving electrode; a second driving electrode spaced apart from the first driving electrode; and a topological insulator that is in contact with both the ...
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WO/2017/018391A1 |
A memory element (10) comprises a magnetization free layer (12) formed in film shape on which a nonmagnetic layer (13) and a magnetization fixed layer (14) are laminated. The magnetization free layer (12) stores one bit of data "0" or "1...
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WO/2017/015294A1 |
A magnetic tunnel junction is disclosed wherein the reference layer and free layer each comprise one layer having a boron content from 25 to 50 atomic%, and an adjoining second layer with a boron content from 1 to 20 atomic%. One of the ...
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