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Patent Searching and Data


Matches 701 - 750 out of 1,024

Document Document Title
JPH10335625A
To provide a photoelectric transducer composed of a photodetecting element and a peripheral circuit integrated on the same semiconductor substrate, where a fixed pattern noise caused by stray carriers which flow into the photodetecting e...  
JPH10512087A
(57) A summary mixed photo-multiplier contains the photocathode (130) arranged by the main part (110) of a detector, a convergence ring (134, 136), a photo-diode (132), and the 捕 collection anode (120). A vacuum envelope (116) encloses...  
JPH10302620A
To provide a method for simultaneously forming activation layers onto the photoelectron emitting surfaces of plural of photocathodes. A substantially spatially uniform activator gas flow is diffused toward a plurality of photocathodes 10...  
JPH10294077A
To provide a light-electric current converter which can respond at high speed, make the current amount to be converted higher, and lower noise much more. It is so designed that a plurality of small needle shaped electron emitting sources...  
JPH10285464A
To obtain a photoelectric converter with high sensitivity and less noise by isolating a reference potential of a photoelectric conversion section from a reference potential of a control section in terms of AC. A plurality of photoelectri...  
JPH10275587A
To efficiently collect photons by providing a light reception part on one end face, providing a cathode and an anode in a container, a circular part being vacuum-sealed, performing photoelectric conversion at the cathode the incident lig...  
JP2801266B2  
JPH10241555A
To provide a photoelectric cathode with which the number of emitted electrons can be increased. This transmission type photoelectric cathode 10 comprises a semiconductor substrate having a first and a second through holes 10b, 10c neighb...  
JPH10241554A
To provide a photoelectric cathode whose productivity is improved together with the detection sensitivity of an electron tube using the cathode. This photoelectric cathode comprises an UV glass substrate 3 and a layered body 10 produce b...  
JPH10241622A
To provide an electronic tube having good airtightness and which is suitable for mass production. Because a low-melting point metal 23 of this electronic tube is extended to an outer surface 2B of an input surface plate 21 by a first sea...  
JP2796046B2  
JPH10188782A
To provide a photocathode, which has high spectral sensitivity over a wide wavelength range, and an electron tube using the same. A photocathode includes a sapphire substrate, an active layer formed from Inx1(Aly1Ga1-y1)1-x1N on the subs...  
JPH10149761A
To provide a photo-electric cathode which is applicable for both reflection type or permeation type electron tubes gives higher quantum efficiency than a crystal diamond thin film and provide an electron tube equipped with the cathode. T...  
JP2759049B2
PURPOSE: To increase mobility of electrons by connecting one of two electrodes with a power supply of an electron emission electrode, and by controlling quantity of the current within an electron collection electrode by the intensity of ...  
JP2758529B2
PURPOSE: To provide a highly sensitive reflection type photoelectric surface in high yield by accumulating a layer on an Al thin film formed on a backing substrate in a prescribed thickness, and activating it by means of alkaline metal. ...  
JP2752312B2  
JP2738899B2
PURPOSE: To improve the degradation in measurement accuracy caused by dispersion among elements and to obtain the simple solid-state image pickup device by eliminating a component of a background light or the like with charge coupling am...  
JPH1069875A
To provide an ultraviolet ray detecting element, having constant sensitivity regardless of the positional relationship between an ultraviolet ray radiating source and an ultraviolet ray detecting element, when both the sides have the sam...  
JPH1070291A
To test the actual thickness of a filter layer supplied in the stage where a chip is still a part of a wafer. The semiconductor chip 10 being employed in a chip array assembly for scanning a hard copy image comprises arrays of photodetec...  
JP2719297B2
PURPOSE: To selectively attain high sensitivity by providing a silver layer made of a granular material at least partially having the grain size of 80-150nm and layers made of silver oxide, potassium, and cesium formed on the silver laye...  
JPH1054878A
To maintain a fluorescent device under a large light emitting quantity condition, a high-resolution condition, and a high-S/N condition by providing electrodes on the electron incident surface and fluorescence radiating surface of a phos...  
JPH1031970A
To provide an electron tube which is embodied in a small size and can be assembled easily. An electron tube 1 is composed of a case 10, input face plate 21, stem 31, semiconductor element 40, and anode electrode 60. The case 10 contains ...  
JPH1031971A
To provide an electronic tube which is embodied in a small size and can be assembled easily. An electronic tube concerned 1 is composed of a case 10, input face plate 21, stem 31, semiconductor element 40, and anode electrode 60. The cas...  
JP2700065B2  
JPH1012182A
To optimize liquid drop density taken in a mass spectrometry device and reduce noise in a sonic spray ion source and the mass spectrometry device. A solution sample in a sample solution introducing part 1 is introduced in a capillary 2. ...  
JPH09297055A
To obtain such a structure that can stabilize the orbit of electron accelerated and focused by an electronic lens and effectively suppress the generation of noises due to discharging. A cathode electrode 3 constituting an electronic lens...  
JPH09283075A
To provide a photomultiplier capable of utilizing its high S-N ratio characteristic and attaining higher light detection efficiency by forming a photoelectric transfer face into a conical structure so that the incident light repeats mult...  
JP2651352B2  
JP2651329B2  
JPH09213203A
To provide a higher sensitive photoelectric surface capable of changing the short wavelength limit and a photoelectric transfer tube using the photoelectric surface. A window layer 31 consisting of Inx(AlyGa1-y)1-x'As is closely provided...  
JPH09213204A
To provide a higher sensitive photoelectric surface having an active layer dissolving crystal defects and an electronic tube using the photoelectric surface. The photoelectric surface is constituted by epitaxially growing and forming an ...  
JPH09213206A
To provide a transmission type photoelectric surface coexisting photoelectric sensitivity and time response characteristics and having simple configuration and manufacture thereof. An active layer 32 consisting of GaAs is thinly formed r...  
JPH09199075A
To provide an electron tube which can suppress the decay of light to be detected incoming to a transmission type photoelectric surface and detects slight light. A mesa transmission-type photoelectric surface 30 is placed on a glass plate...  
JPH09503091A
(57) A summary image intensifier (40) uses the optical response layer which answers the radiation which entered and generates an electron, the solid electronic amplifier which 増倍 the electron generated by the optical response layer, ...  
JPH08255580A
PURPOSE: To improve photoelectric conversion efficiency by biasing voltage across a surface electrode of ohmic contact and a rear electrode, and applying inverse bias to a P-N junction between a contact layer and an electron emission lay...  
JPH08236015A
PURPOSE: To provide a photoelectron emission plane with a small range of travel time to the emission plane and good time response. CONSTITUTION: A p-type light absorbing layer 12 and a p-type electron emission layer 13 are layered on a p...  
JPH08190889A
PURPOSE: To prevent the dew condensation and reduce the power consumption by connecting a photoelectric surface to one end of a radiating heat conductive plate connected to the glass vessel of a photomultiplier and vacuumed in the inner ...  
JPH08153463A
PURPOSE: To provide a semiconductor photo-electric cathode device wherein the quantum efficiency is improved, and the aperture ratio is 100%, the separation of picture elements in the structure is not required, and the modulation of a si...  
JPH08153462A
PURPOSE: To provide a semiconductor photo-electric cathode device wherein the quantum efficiency is improved, and the aperture ratio is 100%, the separation of picture elements in the structure is not required, and the modulation of a si...  
JPH08153461A
PURPOSE: To provide a semiconductor photo-electric cathode device wherein the quantum efficiency is improved, and the aperture ratio is 100%, the separation of picture elements in the structure is not required, and the modulation of a si...  
JP2500209B2
PURPOSE: To provide a reflection type photoelectric surface and a photomultiplier both having high performance by interposing a Cr layer between an Ni electrode and an Al layer. CONSTITUTION: A Cr layer 2 is deposited with a fixed thickn...  
JPH0896705A
PURPOSE: To provide a semiconductor photoelectric cathode and photoelectric tube attaining high sensitivity by sharpening a long wavelength absorbing end while improving quantum efficiency. CONSTITUTION: A semiconductor photoelectric cat...  
JPH0817390A
PURPOSE: To ensure the properties of joining and fitting a detector main body and a cooling device together and to improve operability in assembling them together by joining a heat conductor and the detector main body together via a cont...  
JPH081796B2  
JPH07118790B2  
JP7118790B2  
JPH07320681A
PURPOSE: To provide a high-sensitivity hybrid photomultiplier tube which improves an electron focusing property of a focused electron-bombarded(FEB) ion detector and brings its stable operation. CONSTITUTION: A focused electron-bombarded...  
JPH07262909A
PURPOSE: To obtain a photoelectron emission cathode for which the limit wavelength can be precisely controlled. CONSTITUTION: An applied bias between an ohmic electrode 25 and a short key electrode 24 is adjusted so that the electric fie...  
JPH07161287A
PURPOSE: To provide a photoelectron emitting surface, where an electron can be emitted at low bias voltage, and a photomultiplier with high sensitivity further with low noise remarkably reducing a dark current. CONSTITUTION: In a conditi...  
JPH07161288A
PURPOSE: To reduce a dark current due to applying bias voltage by providing an i-type intermediate layer of high resistance between a light absorbing layer and electron emitting layer of a photoelectron emitting surface, so that a photoe...  

Matches 701 - 750 out of 1,024