Login| Sign Up| Help| Contact|

Patent Searching and Data


Matches 551 - 600 out of 1,020

Document Document Title
JP2005094004A
To provide a photodetector having a specially improved quantum efficiency without conventional technical defects.The photodetector based on a semiconductor, silicon in particular, comprises: a detector body (1.1) having a detector surfac...  
JP2005085681A
To provide an electron beam detection apparatus and an electron tube detecting electrons with excellent response and high sensitivity by preventing deterioration in response speed and reducing noise.An insulating tube 9 has one end and t...  
JP2005085673A
To provide an electron tube easy to handle at the time of use and with high safety.An insulating cylinder 9 is protruded toward inside of an envelope 2 of the electron tube. One end of the insulating cylinder 9 is connected to the envelo...  
JP2005085680A
To provide an electron tube having a semiconductor device of an electron implantation type and preventing the adhesion of metal at undesired spots with a simple structure.An photoelectric surface 11 is formed at a prescribed section on a...  
JP2005085676A
To provide an electron tube easy to manufacture and excellent in detection precision.An outer case 2 has a glass bulb main body 4 and a glass bulb base 5. The main body 4 is composed of an upper hemisphere 4a and a lower hemisphere 4b. T...  
JPWO2005027178A
In an electron tube (1), the end of the insulating pipe (9) has projected to the inside side of enclosure machine (2), and an avalanche photo-diode (APD) (15) is provided in the end of an insulating pipe (9). The other end of the insulat...  
JP2005073270A
To reduce costs by decreasing the number of optical components used in an optical network.The method for controlling an amplifier in the optical network includes determining primary pump power information for a primary amplifier and comm...  
JP2005506851A
The present invention relates to the new method of determining the amount of taking in and burst size of the actual amount of photosynthesis (the total amount of photosynthesis), the amount of light respiration and carbon dioxide, oxygen...  
JP2005061843A
To provide a wavelength measuring instrument, a light-receiving unit and a wavelength measuring method for capable of easily realizing high precision wavelength characteristics, in a desired wavelength range.A temperature control means, ...  
JP3626313B2  
JP3623068B2  
JP2005045049A
To provide an electrooptical element for including a light emitting element and a light receiving element.The electrooptical element 100 includes a light emitting element 140 and a light-receiving element 120 that is formed on the light ...  
JP2005035455A
To provide an infrared floodlight for a vehicle in which a light-up state of an infrared light source can be visually confirmed.The infrared floodlight 32 includes a light source 31 emitting infrared rays and a visible luminous phosphor ...  
JP2005033106A
To provide a surface emitting type light emitting device which can maintain characteristics of the surface emitting type light emitting device and can accurately detect an emitted light.A surface emitting type light emitting device 100 c...  
JP2005030972A
To provide a photomultiplier module with a shutter, to achieve size reduction.In the photomultiplier module 1 with the shutter, a head-on type photomultiplier 3 is housed in a dark box 2, in which the front surface of the dark box 2 is c...  
JP2005033083A
To provide a method for manufacturing a faint-light detector including an FET without damaging the FET.The method for manufacturing a faint-light detector having a circuit including a light detecting means and a field effect transistor (...  
JP3615857B2  
JP3615856B2  
JP2005011593A
To provide a light detection tube capable of preventing a situation wherein phosphorescence or fluorescence is generated from a sapphire plate, and of reducing dark noise.Since a peripheral part of the sapphire plate 2 is airtightly ther...  
JP2005006119A
To provide an optical receiver which can receive optical signals which are transmitted from various transmission sources and quickly change and steeply fall.A time schedule stored in a time schedule storage part 16 and a reception intens...  
JP2004336320A
To provide a light receiving amplifier device provided with an APD (avalanche photodiode) capable of preventing the self-destruction of the APD even when strong light is input and capable of suppressing power consumption.The light receiv...  
JP2004311784A
To provide a photodetector which can be surface mounted stably on a circuit board, for example, and to provide its mounting method.A light receiving element 20 where a transparent conductive electrode 26 (first electrode), a semiconducto...  
JP2004289042A
To realize an integrated circuit which can increase its operating speed, enhance its functions, and can reduce the number of elements.Fine vacuums tube elements and other electronic components are integrally formed on a semiconductor sub...  
JP2004281829A
To provide an inexpensive and miniaturized chip sensor.In the chip sensor 1, a wiring pattern and a land pattern not shown in Fig. are formed on the upper surface of a substrate 2 which is a printed circuit board (PCB) composed of a glas...  
JP2004274109A
To provide an optical receiver for converting an optical signal into an electric signal and output the converted signal, which can suppress a harmful effect on the output signal due to a parasitic current generated between an photoelectr...  
JP2004260007A
To provide a light receiving module capable of surely performing wire bonding between a light receiving element and the upper surface of a die cap capacitor and a method for manufacturing the light receiving module.The light receiving mo...  
JP2004260230A
To provide a photoelectric current / voltage conversion circuit for suppressing distortion caused by a difference between the width of an input waveform and the width of an output waveform and distortion caused by a difference between th...  
JP3565535B2
To provide a photocathode, which has high spectral sensitivity over a wide wavelength range, and an electron tube using the same. A photocathode includes a sapphire substrate, an active layer formed from Inx1(Aly1Ga1-y1)1-x1N on the subs...  
JP2004235609A
To reduce a sensitivity degradation due to the reflection by a silicon oxide film in contact with the silicon surface of a photodiode in the conventional photoelectric transducing apparatus, and to reduce the increasing ratio of 1/f nois...  
JP2004228482A
To provide a semiconductor radiation detector that uses a surface-barrier type or pn junction type InSb single crystal, which has small leakage current at a temperature of 10K or higher, has few electron or hole trappings, and has large ...  
JPWO2004066338A
This invention relates to the alkaline metal generating agent for forming the photoelectric surface or secondary electron discharge side which can generate an alkaline metal stably, etc. The alkaline metal generating agent (1) concerned ...  
JPWO2004066339A
This invention relates to the alkaline metal generating agent for forming the photoelectric surface or secondary electron discharge side which can generate an alkaline metal stably, etc. The alkaline metal generating agent (1) concerned ...  
JPWO2004066337A
This invention relates to the alkaline metal generating agent for forming the photoelectric surface or secondary electron discharge side which can generate an alkaline metal stably, etc. The alkaline metal generating agent (1) concerned ...  
JP2004215274A
To provide the temperature compensating device for the APD optical receiver which is able to perform a linear compensation through a data look-up for compensating a decrease of a gain that corresponds to a temperature change of the APD.I...  
JP2004214924A
To compensate with high accuracy and suppress the chip area in a compensating circuit 42, which constitutes a Darlington circuit 41 in an integrated circuit and compensates optical leak currents I1, I2 generated at a base of a PNP transi...  
JP3547901B2  
JP2004187168A
To provide circuit structure capable of holding input voltage to a signal detection circuit constant without depending on voltage to be applied on an optical current monitor terminal.The circuit structure is applied to an optical receive...  
JP2004179651A
To provide a detector for incident light having a long wavelength that uses a low-priced, high-sensitivity photosensitive device which contains silicon-based germanium, and to provide its detection method.The photodetector (100) has a fi...  
JP3537515B2
PURPOSE: To provide a semiconductor photo-electric cathode device wherein the quantum efficiency is improved, and the aperture ratio is 100%, the separation of picture elements in the structure is not required, and the modulation of a si...  
JP2004165014A
To provide a photo cathode allowing a photo cathode plate to be surely held to a light transmission member with high workability.In this photo cathode 1, claw parts 16 of a holding member 7 fixed to the light transmission plate 3 is pres...  
JP2004165054A
To provide a photocathode capable of improving S/N ratio by restraining lowering of a spectral sensitivity when temperature is lowered.A light-absorbing layer 12 is formed on a substrate 11, and an electron-emitting layer 13 is formed on...  
JP2004158855A
To reduce the number of components of an optical sensor incorporated into a device such as an optical mouse and facilitate incorporation into the device.A sensor housing 60 of an optical sensor 42 is subjected to insert molding by using ...  
JP2004158301A
To provide a semiconductor photocathode with high sensitivity in an infrared region and to provide a photoelectric tube using it.A semiconductor photocathode 1 has a p+ type semiconductor substrate 2 made of GaSb and a p- type light abso...  
JP3524249B2
To provide an electron tube which can suppress the decay of light to be detected incoming to a transmission type photoelectric surface and detects slight light. A mesa transmission-type photoelectric surface 30 is placed on a glass plate...  
JP2004134748A
To provide a method of accurately measuring the current and voltage characteristics of a photoelectric conversion device, even under a light such as pulsed light and the sunlight having varying intensity.The method of measuring the curre...  
JP3518880B2
PURPOSE: To provide an excellent reflection type alkaline photoelectric surface by specifying an adhering weight of antimony in the reflection type alkaline photoelectric surface where antimony and plural kinds of alkaline metals are inc...  
JP2004509586A
[Subject] The 限 style type large current surveillance circuit of an optical power detector is offered. [Solution means] The large current surveillance circuit of an optical power detector (12) has a variable impedance transistor (50) w...  
JP2004093257A
To provide an optical sensor unit which is not influenced by an electric noise.High-frequency connectors 22 and 24 are mounted on the outer side surface of a sensor chassis 20 of the optical sensor unit. A metal plate 26 whose both ends ...  
JP2004507881A
After carrying out the getter of the wafer for a low leak current back irradiated semiconductor photodiode array, it manufactures using the production method of the transparent conductive bias electrode layer which avoids carrying out hi...  
JP2004053578A
To provide a low-cost optical object discriminating apparatus, a processing system and a transport processing system capable of discriminating a type accurately without touching an object such as a recording medium via signal processing ...  

Matches 551 - 600 out of 1,020