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JP2004179651A |
To provide a detector for incident light having a long wavelength that uses a low-priced, high-sensitivity photosensitive device which contains silicon-based germanium, and to provide its detection method.The photodetector (100) has a fi...
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JP3537515B2 |
PURPOSE: To provide a semiconductor photo-electric cathode device wherein the quantum efficiency is improved, and the aperture ratio is 100%, the separation of picture elements in the structure is not required, and the modulation of a si...
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JP3524249B2 |
To provide an electron tube which can suppress the decay of light to be detected incoming to a transmission type photoelectric surface and detects slight light. A mesa transmission-type photoelectric surface 30 is placed on a glass plate...
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JP2004134748A |
To provide a method of accurately measuring the current and voltage characteristics of a photoelectric conversion device, even under a light such as pulsed light and the sunlight having varying intensity.The method of measuring the curre...
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JP3518880B2 |
PURPOSE: To provide an excellent reflection type alkaline photoelectric surface by specifying an adhering weight of antimony in the reflection type alkaline photoelectric surface where antimony and plural kinds of alkaline metals are inc...
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JP2004093257A |
To provide an optical sensor unit which is not influenced by an electric noise.High-frequency connectors 22 and 24 are mounted on the outer side surface of a sensor chassis 20 of the optical sensor unit. A metal plate 26 whose both ends ...
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JP2004507881A |
Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after th...
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JP2004047560A |
To provide a small-size sophisticated photoconductive switching module having proper characteristics.The photoconductive switch module 100 comprises a light-emitting element substrate 110 including a plurality of light-emitting elements ...
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JP2004047561A |
To provide a small-size sophisticated photoconductive switch module having proper characteristics.The photoconductive switch module 100 comprises a light-emitting element substrate 110 including a plurality of light-emitting elements 112...
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JP2004004459A |
To provide an optical transmitting and receiving apparatus which is suitable to be used in a system for an optical communication member necessitating communication speed to about 250Mbps in the communication networks of the middle range ...
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JP2003338260A |
To provide a semiconductor photoelectric face and a photodetection tube wherein gettering of the residual gas near the photoelectric face can be carried out also in a small-sized photodetection tube.The semiconductor photoelectric face i...
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JP2003316509A |
To provide a means for sensing the rotation of an apparatus such as an optical pointing device.An apparatus (300) for sensing rotation is provided with a plurality of motion sensors (16) constructed in a substantially coplanar arrangemen...
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JP3455588B2 |
PURPOSE: To ensure the properties of joining and fitting a detector main body and a cooling device together and to improve operability in assembling them together by joining a heat conductor and the detector main body together via a cont...
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JP2003282935A |
To stabilize a characteristic and a quality by easily forming an optical path between a light emitting element and a light receiving element by a translucent resin.The translucent resin 19 is applied on the inside of a support frame 12, ...
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JP3441101B2 |
PURPOSE: To provide an electron tube containing semiconductor device, in which an electron introducing layer shows a good accumulation condition. CONSTITUTION: A semiconductor device 10, in which an electron introducing layer 14 consisti...
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JP3433537B2 |
PURPOSE: To provide a semiconductor photo-electric cathode device wherein the quantum efficiency is improved, and the aperture ratio is 100%, the separation of picture elements in the structure is not required, and the modulation of a si...
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JP3433538B2 |
PURPOSE: To provide a semiconductor photo-electric cathode device wherein the quantum efficiency is improved, and the aperture ratio is 100%, the separation of picture elements in the structure is not required, and the modulation of a si...
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JP2003217489A |
To provide an electron tube capable of improving uniformity of luminance by equalizing the distribution of an antimony film without limiting a structure.In depositing the antimony film on a photoelectric surface 4, a movable electrode 13...
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JP3429671B2 |
To provide a photoelectric cathode with good sensitivity in an infrared region and an electron tube using it. A photoelectric cathode is formed to emit photoelectrons corresponding to an incident light in a infrared region. In this case,...
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JP3413241B2 |
PURPOSE: To realize an electron beam radiation type diode having a structor in a thin dead zone which incidental electrons may not intrude into a p-n junction surface, so as to provide an electron tube having improved sensitivity and pre...
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JP3401044B2 |
PURPOSE: To provide a photomultiplier by which reliability can be improved by noise reduction and workability can be improved by reduction of the number of part items. CONSTITUTION: A converging electrode 7 formed of a stainless steel pl...
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JP3395255B2 |
PURPOSE: To provide a thin, sensitive, and compact photoconductive element which is strong against external environment. CONSTITUTION: A number of electric field release type cathodes with an emitter 4 on a cone are provided on an amorph...
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JP2003101738A |
To compensate for a gap in a size that cannot be predicted along a linear array in a photosensor using a simple algorithm.In the photosensitive scanning apparatus where a plurality of chips for forming a single linear array in a photosen...
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JP3375907B2 |
This invention has as an object thereof to provide an overhead-traveling carrying apparatus which is capable of inexpensively incorporating countermeasures for detecting the presence of an obstacle such as a human being or a carelessly p...
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JP3361735B2 |
It is so adapted that a sample is mounted on three-dimensional stages through a sample holder and a beam light emitted from a beam light oscillator is applied to a sample surface through a polarizing element different from polarization o...
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JP3361367B2 |
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JP2002368251A |
To provide a photosensitive electric device, operating as an optically- controlled switch. The optically-controlled switch (10) comprises first and second electrodes (18, 20), a channel (26) extending between the electrodes, and a light ...
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JP2002539026A |
A vehicle lamp assembly (209) includes a housing (202) and an LED lamp (218) carried in the housing. A signal mirror (100) includes a mirror (222) and an LED lamp. The LED lamp includes a heat extraction member (400).
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JP3333449B2 |
To provide an image read apparatus which can read fluorescent images with high sensitivity. This image read apparatus comprises laser exciting light sources 1, 2, 3 for emitting a laser excitated light 4, an optical detector for photoele...
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JP2002290683A |
To provide an image sensor which is capable of outputting scan signals which are high in fidelity and have low noises.The image sensor adopting a plurality of photodetector arrays is provided. Each photodetector array comprises photodete...
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JP3327289B2 |
A detection apparatus for detecting the process end point in the removal process of a layer on a wafer in an IC or other semiconductor device manufacturing process. This point can be detected in-situ and at high precision even when there...
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JP3323636B2 |
PURPOSE: To obtain a photoelectron emission cathode for which the limit wavelength can be precisely controlled. CONSTITUTION: An applied bias between an ohmic electrode 25 and a short key electrode 24 is adjusted so that the electric fie...
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JP3320335B2 |
A photoelectric conversion device and an image sensor having a plurality of photodetectors and peripheral circuits, configured with MOS transistors, which are integrally formed on a semiconductor substrate. In the peripheral circuits, in...
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JP2002245961A |
To reduce depletion layer capacity, restrain an off electric current small and realize high speed responsiveness by restraining formation of a depletion layer 13 on a surface of a semiconductor substrate 11.A photoelectric transfer devic...
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JP2002184302A |
To provide a semiconductor photoelectric cathode that is capable of improving its property.When the light absorption layer 2 is thick, deterioration phenomenon in the time resolution appears, but when the thickness of the light resolutio...
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JP2002150928A |
To provide a semiconductor photocathode that has a light-absorbing layer, formed of AlxGa1-x(0≤x≤1) and has high quantum efficiency.An ultraviolet region light, made to be incident from a surface layer 5 side goes through the surface...
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JP2002040300A |
To obtain a light receiving and emitting device that allows low cost and small size through a simple structure and that has little environmental impact in discarding.The light receiving and emitting device is provided with an electron em...
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JP2001526446A |
An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the condu...
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JP2001523383A |
This invention discloses a thin-film-coated photocathode, including a photocathode formed of first material consisting of potassium cesiuin antimonide and a thin-film coating of a second material consisting of cesium bromide (CsBr).
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JP2001319565A |
To provide a photocathode capable of easily and effectively improving quantum efficiency on a photoelectric face.The photocathode comprises a ferroelectric substrate 12 and a photoelectric face 11 formed on the ferroelectric substrate 12...
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JP3220245B2 |
PURPOSE: To provide a high-sensitive photomultiplier capable of effectively utilizing light entered in a light incident window. CONSTITUTION: In a head-on type photomultiplier in which one side end surface of a translucent glass bulb 1 i...
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JP3216944B2 |
PURPOSE: To provide a reflex type photoelectric tube of such a structure as embodied in a small size, suitable for massproducing and unlikely to go into breakage, while a sufficient sensitivity for incident beam of light is maintained. C...
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JP2001267621A |
To provide a photodetector capable of improving detection accuracy and reducing the size and cost of a device.A photodetector, which has a photodiode 11 for detecting entering light in a state set at a predetermined bias voltage and a co...
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JP2001236877A |
To provide a light detection device, that has a structure combining a field-emission-type electron source and a photodiode, and can detect correctly two-dimensional distribution of the intensity of light.A field-emission-type electron so...
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JP2001237778A |
To solve the problem that it is difficult to use a light-receiving circuit in a high-frequency region, due to the increase of an input capacitance at integration of an input protecting circuit, and that it is impossible to sufficiently r...
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JP2001202873A |
To provide a cathode for photoelectron or secondary electron emission in which quantum efficiency, more particularly red color sensitivity can be improved and the spectrophoto sensitivity or secondary electron emission property can be im...
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JP2001195974A |
To provide a photoelectric emission surface and a photodetector utilizing the same, which comprises a Si substrate having PS area and is of a low noise for practical use. This photodetector 100 comprises a photoelectron emission surface ...
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JP3184489B2 |
To efficiently collect photons by providing a light reception part on one end face, providing a cathode and an anode in a container, a circular part being vacuum-sealed, performing photoelectric conversion at the cathode the incident lig...
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JP3179537B2 |
PURPOSE: To lessen the dark current in a photomultiplier including a photoelectric surface, a multiplier for multiplying the photoelectrons emitted therefrom, and an anode electrode for collecting electrons, by providing a substrate ther...
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JP3177253B2 |
A proximity detector and ambient light monitor (PALM) is provided, comprising a light source for generating an optical composite signal, a light detector for providing a detected signal, a circuit for separating the ac component from the...
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