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JP2001093407A |
To provide a semiconductor photoelectric cathode having a wavelength classifying function, and an optical detector and an optical detection equipment using the semiconductor photoelectric cathode. A semiconductor photoelectric cathode ac...
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JP3122327B2 |
PURPOSE: To provide a photoelectron emission plane with a small range of travel time to the emission plane and good time response. CONSTITUTION: A p-type light absorbing layer 12 and a p-type electron emission layer 13 are layered on a p...
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JP2000357449A |
To allow film formation on low softening substrate or low melting- point substrate and provide a photoelectric surface with high quantum efficiency, by making the photoelectric surface or emitting photoelectrons with incident light out o...
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JP2000149858A |
To obtain a sufficient linearity characteristic and a sufficient angle characteristic dependent on COSθ, and to aim at cost reduction. This photoelectric tube has such a formation that a photoelectric surface 5 is arranged adjacently to...
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JP2000149857A |
To provide a sufficient COSθ-dependent angular characteristic and improve reliability. A photoelectric surface 5 is arranged close to a light incident surface plate 2, and the photoelectric surface 5 is limited to be smaller than a ligh...
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JP2000021297A |
To provide a semiconductor photo-electric cathode capable of increasing quantum efficiency of forming a semiconductor optical absorption layer with high crystallinity. This semiconductor photo-electric cathode has a semiconductor optical...
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JP2000021295A |
To provide a semiconductor photo-electric cathode capable of increasing quantum efficiency by forming a semiconductor photo absorption layer with high crystallinity. A region of a second semiconductor layer 2d on a first insulator layer ...
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JP3000979B2 |
In a multi-element sensor calibration apparatus, an image signal derived from a multi-element sensor installed in a facsimile or a satellite is periodically calibrated based upon a zero level signal and a calibration signal having more t...
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JPH11260248A |
To obtain a photocathode whose temperature characteristics and sensitivity characteristics can be improved. This photocathode 5 is formed on a compound semiconductor layer 5c and equipped with an alkali-metal containing layer 5d, which c...
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JP2923395B2 |
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JP2923462B2 |
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JP2902708B2 |
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JPH11135003A |
To provide a photoelectric surface provided with a light absorption layer having little crystalline defect, and highly sensitive against visible light and infrared rays of an arbitrary wave length zone, and provide an electron tube using...
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JPH11102657A |
To provide a photo-detecting tube which selectively detects only the light of wavelength near 125 nm. The detecting tube 1 is provided with an incidence window 3 and a photocathode 5, the incidence window 3 is made of MgF2, and the photo...
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JPH11102658A |
To provide a photo-detecting tube which selectively detects only the light of wavelength near 360 nm. A photo-detecting tube 1 is provided with an incidence window 3 and a photocathode 5, the incidence window 3 is made of covar glass, an...
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JPH11102659A |
To provide a photo-detecting tube which selectively detects only the light of wavelength near 170 nm. A photo-detecting tube 1 is provided with an incidence window 3 and a photocathode 5, the incidence window 3 is made of quartz glass, a...
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JPH11102656A |
To provide a photo-detecting tube which selectively detects only the light of wavelength near 250 nm. A photo-detecting tube 1 is provided with an incidence window 3 and a photocathode 5, the incidence window 3 is made of ozone free quar...
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JPH1196896A |
To provide a semiconductor photoelectric surface with high quantum efficiency and low doping concentration. A photoelectric tube 10 using a photoelectric surface as a photoelectric cathode 30 is formed by facing a photoelectric cathode 3...
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JPH1196897A |
To provide a photoelectric cathode having high photoelectric transfer quantum efficiency up to long wave length, and an electron tube having the photoelectric cathode. A photoelectric cathode 11 has a basic structure comprising a GaAs su...
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JP2877487B2 |
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JP2589953Y2 |
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JPH10512087A |
A focused electron/bombarded hybrid photomultiplier tube comprising a photocathode, focusing electrodes, and a collection anode disposed in a detector body. The collector anode includes a diode for receiving the focused output electron b...
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JP2801266B2 |
Photomultiplier tube (10) comprising a photocathode (20), a first cylindrical dynode (30), an electron multiplier device (40) of the "leaf" type, and a device (50) for coupling the first dynode (30) to the multiplier device (40). Accordi...
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JPH10241555A |
To provide a photoelectric cathode with which the number of emitted electrons can be increased. This transmission type photoelectric cathode 10 comprises a semiconductor substrate having a first and a second through holes 10b, 10c neighb...
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JP2796046B2 |
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JP2759049B2 |
PURPOSE: To increase mobility of electrons by connecting one of two electrodes with a power supply of an electron emission electrode, and by controlling quantity of the current within an electron collection electrode by the intensity of ...
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JP2758529B2 |
PURPOSE: To provide a highly sensitive reflection type photoelectric surface in high yield by accumulating a layer on an Al thin film formed on a backing substrate in a prescribed thickness, and activating it by means of alkaline metal. ...
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JP2752312B2 |
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JP2738899B2 |
PURPOSE: To improve the degradation in measurement accuracy caused by dispersion among elements and to obtain the simple solid-state image pickup device by eliminating a component of a background light or the like with charge coupling am...
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JPH1069875A |
To provide an ultraviolet ray detecting element, having constant sensitivity regardless of the positional relationship between an ultraviolet ray radiating source and an ultraviolet ray detecting element, when both the sides have the sam...
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JPH1070291A |
To test the actual thickness of a filter layer supplied in the stage where a chip is still a part of a wafer. The semiconductor chip 10 being employed in a chip array assembly for scanning a hard copy image comprises arrays of photodetec...
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JP2719297B2 |
PURPOSE: To selectively attain high sensitivity by providing a silver layer made of a granular material at least partially having the grain size of 80-150nm and layers made of silver oxide, potassium, and cesium formed on the silver laye...
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JPH1054878A |
To maintain a fluorescent device under a large light emitting quantity condition, a high-resolution condition, and a high-S/N condition by providing electrodes on the electron incident surface and fluorescence radiating surface of a phos...
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JP2700065B2 |
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JPH1012182A |
To optimize liquid drop density taken in a mass spectrometry device and reduce noise in a sonic spray ion source and the mass spectrometry device. A solution sample in a sample solution introducing part 1 is introduced in a capillary 2. ...
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JPH09297055A |
To obtain such a structure that can stabilize the orbit of electron accelerated and focused by an electronic lens and effectively suppress the generation of noises due to discharging. A cathode electrode 3 constituting an electronic lens...
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JP2651352B2 |
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JP2651329B2 |
A cathode for photoelectric emission or a cathode for secondary electron emission comprises a thin film made of a material which emits photoelectrons (4) by an incident light (3) or emits secondary electrons by an electron input on a bas...
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JPH09213206A |
To provide a transmission type photoelectric surface coexisting photoelectric sensitivity and time response characteristics and having simple configuration and manufacture thereof. An active layer 32 consisting of GaAs is thinly formed r...
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JPH09503091A |
An image intensifier tube that utilizes a photoresponsive layer for producing electrons in response to received radiation, a solid state electron amplifier for multiplying the electrons produced by the photoresponsive layer, a cold catho...
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JPH08190889A |
PURPOSE: To prevent the dew condensation and reduce the power consumption by connecting a photoelectric surface to one end of a radiating heat conductive plate connected to the glass vessel of a photomultiplier and vacuumed in the inner ...
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JP2500209B2 |
PURPOSE: To provide a reflection type photoelectric surface and a photomultiplier both having high performance by interposing a Cr layer between an Ni electrode and an Al layer. CONSTITUTION: A Cr layer 2 is deposited with a fixed thickn...
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JPH0896705A |
PURPOSE: To provide a semiconductor photoelectric cathode and photoelectric tube attaining high sensitivity by sharpening a long wavelength absorbing end while improving quantum efficiency. CONSTITUTION: A semiconductor photoelectric cat...
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JPH081796B2 |
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JPH07118790B2 |
A photodetector sensing system is disclosed which combines staring and scanning features. By providing both temporal and spatial filtering, many system benefits are obtained. Each pixel in the viewed scene has a "dedicated" filter, which...
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JPH07320681A |
PURPOSE: To provide a high-sensitivity hybrid photomultiplier tube which improves an electron focusing property of a focused electron-bombarded(FEB) ion detector and brings its stable operation. CONSTITUTION: A focused electron-bombarded...
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JPH07161287A |
PURPOSE: To provide a photoelectron emitting surface, where an electron can be emitted at low bias voltage, and a photomultiplier with high sensitivity further with low noise remarkably reducing a dark current. CONSTITUTION: In a conditi...
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JPH07161288A |
PURPOSE: To reduce a dark current due to applying bias voltage by providing an i-type intermediate layer of high resistance between a light absorbing layer and electron emitting layer of a photoelectron emitting surface, so that a photoe...
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JPH0736316B2 |
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JPH0794138A |
PURPOSE: To provide a small type electron tube device having the capability of evenly maintaining the temperature of the whole of a photoelectron target at a desired level. CONSTITUTION: A fluid having temperature adjusted to the preset ...
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