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JP10069875 |
To provide an ultraviolet ray detecting element, having constant sensitivity regardless of the positional relationship between an ultraviolet ray radiating source and an ultraviolet ray detecting element, when both the sides have the sam...
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JP10070291 |
To test the actual thickness of a filter layer supplied in the stage where a chip is still a part of a wafer. The semiconductor chip 10 being employed in a chip array assembly for scanning a hard copy image comprises arrays of photodetec...
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JP10054878 |
To maintain a fluorescent device under a large light emitting quantity condition, a high-resolution condition, and a high-S/N condition by providing electrodes on the electron incident surface and fluorescence radiating surface of a phos...
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JP10031970 |
To provide an electron tube which is embodied in a small size and can be assembled easily. An electron tube 1 is composed of a case 10, input face plate 21, stem 31, semiconductor element 40, and anode electrode 60. The case 10 contains ...
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JP10031971 |
To provide an electronic tube which is embodied in a small size and can be assembled easily. An electronic tube concerned 1 is composed of a case 10, input face plate 21, stem 31, semiconductor element 40, and anode electrode 60. The cas...
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JP10012182 |
To optimize liquid drop density taken in a mass spectrometry device and reduce noise in a sonic spray ion source and the mass spectrometry device. A solution sample in a sample solution introducing part 1 is introduced in a capillary 2. ...
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JP09297055 |
To obtain such a structure that can stabilize the orbit of electron accelerated and focused by an electronic lens and effectively suppress the generation of noises due to discharging. A cathode electrode 3 constituting an electronic lens...
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JP2719297 |
PURPOSE: To selectively attain high sensitivity by providing a silver layer made of a granular material at least partially having the grain size of 80-150nm and layers made of silver oxide, potassium, and cesium formed on the silver laye...
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JP09213204 |
To provide a higher sensitive photoelectric surface having an active layer dissolving crystal defects and an electronic tube using the photoelectric surface. The photoelectric surface is constituted by epitaxially growing and forming an ...
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JP09213203 |
To provide a higher sensitive photoelectric surface capable of changing the short wavelength limit and a photoelectric transfer tube using the photoelectric surface. A window layer 31 consisting of Inx(AlyGa1-y)1-x'As is closely provided...
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JP09213206 |
To provide a transmission type photoelectric surface coexisting photoelectric sensitivity and time response characteristics and having simple configuration and manufacture thereof. An active layer 32 consisting of GaAs is thinly formed r...
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JP09199075 |
To provide an electron tube which can suppress the decay of light to be detected incoming to a transmission type photoelectric surface and detects slight light. A mesa transmission-type photoelectric surface 30 is placed on a glass plate...
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JP08255580 |
PURPOSE: To improve photoelectric conversion efficiency by biasing voltage across a surface electrode of ohmic contact and a rear electrode, and applying inverse bias to a P-N junction between a contact layer and an electron emission lay...
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JP08236015 |
PURPOSE: To provide a photoelectron emission plane with a small range of travel time to the emission plane and good time response. CONSTITUTION: A p-type light absorbing layer 12 and a p-type electron emission layer 13 are layered on a p...
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JP08190889 |
PURPOSE: To prevent the dew condensation and reduce the power consumption by connecting a photoelectric surface to one end of a radiating heat conductive plate connected to the glass vessel of a photomultiplier and vacuumed in the inner ...
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JP08153462 |
PURPOSE: To provide a semiconductor photo-electric cathode device wherein the quantum efficiency is improved, and the aperture ratio is 100%, the separation of picture elements in the structure is not required, and the modulation of a si...
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JP08153461 |
PURPOSE: To provide a semiconductor photo-electric cathode device wherein the quantum efficiency is improved, and the aperture ratio is 100%, the separation of picture elements in the structure is not required, and the modulation of a si...
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JP08153463 |
PURPOSE: To provide a semiconductor photo-electric cathode device wherein the quantum efficiency is improved, and the aperture ratio is 100%, the separation of picture elements in the structure is not required, and the modulation of a si...
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JP08096705 |
PURPOSE: To provide a semiconductor photoelectric cathode and photoelectric tube attaining high sensitivity by sharpening a long wavelength absorbing end while improving quantum efficiency. CONSTITUTION: A semiconductor photoelectric cat...
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JP2500209 |
PURPOSE: To provide a reflection type photoelectric surface and a photomultiplier both having high performance by interposing a Cr layer between an Ni electrode and an Al layer. CONSTITUTION: A Cr layer 2 is deposited with a fixed thickn...
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JP08017390 |
PURPOSE: To ensure the properties of joining and fitting a detector main body and a cooling device together and to improve operability in assembling them together by joining a heat conductor and the detector main body together via a cont...
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JP07262909 |
PURPOSE: To obtain a photoelectron emission cathode for which the limit wavelength can be precisely controlled. CONSTITUTION: An applied bias between an ohmic electrode 25 and a short key electrode 24 is adjusted so that the electric fie...
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JP07161288 |
PURPOSE: To reduce a dark current due to applying bias voltage by providing an i-type intermediate layer of high resistance between a light absorbing layer and electron emitting layer of a photoelectron emitting surface, so that a photoe...
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JP07161287 |
PURPOSE: To provide a photoelectron emitting surface, where an electron can be emitted at low bias voltage, and a photomultiplier with high sensitivity further with low noise remarkably reducing a dark current. CONSTITUTION: In a conditi...
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JP07122228 |
PURPOSE: To provide a cathode contact electrode structure of photoelectric transfer tube which can generate the photoelectric surface of good workmanship at a low cost. CONSTITUTION: A cathode contact electrode consisting of the first ca...
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JP07105904 |
PURPOSE: To provide a transmissive type photoelectric tube of such a structure as embodied in a small size, suitable for massproducing and unlikely to go into breakage, while a sufficient sensitivity for incident beam of light is maintai...
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JP07105903 |
PURPOSE: To provide a reflex type photoelectric tube of such a structure as embodied in a small size, suitable for massproducing and unlikely to go into breakage, while a sufficient sensitivity for incident beam of light is maintained. C...
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JP07094138 |
PURPOSE: To provide a small type electron tube device having the capability of evenly maintaining the temperature of the whole of a photoelectron target at a desired level. CONSTITUTION: A fluid having temperature adjusted to the preset ...
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JP07078554 |
PURPOSE: To provide a photoelectron emission surface having excellent photoelectric transfer quantum efficiency, a high-sensitivity electron tube having photoelectron multiplication function, and a high-sensitivity light detection device...
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JP07050149 |
PURPOSE: To provide a photoelectric cathode, a photoelectric tube, and a photo- detecting device having position resolution and high sensitivity. CONSTITUTION: The surface electrode 105 of a photoelectric cathode 1 is divided into a plur...
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JP07014502 |
PURPOSE: To selectively attain high sensitivity by providing a silver layer made of a granular material at least partially having the grain size of 80-150nm and layers made of silver oxide, potassium, and cesium formed on the silver laye...
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JP06341893 |
PURPOSE: To provide a thin, sensitive, and compact photoconductive element which is strong against external environment. CONSTITUTION: A number of electric field release type cathodes with an emitter 4 on a cone are provided on an amorph...
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JP06342626 |
PURPOSE: To provide a reflection type alkali-tellirium photoelectric face excellent in its radiation sensitivity and quantum efficiency. CONSTITUTION: In an alkali-tellirium photoelectric face, a thin layer of Te is deposited on a base d...
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JP06342625 |
PURPOSE: To provide high sensitivity and improve yielding by making the deposi tion weight of thin layer of CsI, KBr or CuI formed on a base 100μg/cm2 or less. CONSTITUTION: A fully thin layer of CsI, KBr or CuI is deposited on a base a...
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JP06318447 |
PURPOSE: To realize an electron beam radiation type diode having a structor in a thin dead zone which incidental electrons may not intrude into a p-n junction surface, so as to provide an electron tube having improved sensitivity and pre...
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JP06310086 |
PURPOSE: To provide a photomultiplier by which reliability can be improved by noise reduction and workability can be improved by reduction of the number of part items. CONSTITUTION: A converging electrode 7 formed of a stainless steel pl...
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JP06290704 |
PURPOSE: To provide an excellent reflection type alkaline photoelectric surface by specifying an adhering weight of antimony in the reflection type alkaline photoelectric surface where antimony and plural kinds of alkaline metals are inc...
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JP06243795 |
PURPOSE: To provide an electron tube containing semiconductor device, in which an electron introducing layer shows a good accumulation condition. CONSTITUTION: A semiconductor device 10, in which an electron introducing layer 14 consisti...
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JP06119872 |
PURPOSE: To provide a cathode for emitting a photoelectron or a secondary electron, incorporating improved quantum efficiency. CONSTITUTION: Many grains 5c composed of a compound of cesium metal, sodium metal, potassium metal and antimon...
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JP06068840 |
PURPOSE: To improve the quantum efficiency of a UV-ray photoelectric surface. CONSTITUTION: A photoelectric surface or a photomultiplier tube is provided with a window material to transmit incidental light, a substrate film including alu...
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JP06060845 |
PURPOSE: To provide a high-sensitive photomultiplier capable of effectively utilizing light entered in a light incident window. CONSTITUTION: In a head-on type photomultiplier in which one side end surface of a translucent glass bulb 1 i...
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JP05299052 |
PURPOSE: To provide a highly sensitive reflection type photoelectric surface in high yield by accumulating a layer on an Al thin film formed on a backing substrate in a prescribed thickness, and activating it by means of alkaline metal. ...
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JP05290996 |
PURPOSE: To carry out processes such as etching by forming a clean neutral particle beam by electron combination reaction regardless of what kind of gas is used. CONSTITUTION: A neutral particle beam processor is provided with a plasma c...
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JP05282991 |
PURPOSE: To realize a sensitive photoelectron emission plane having a simple structure by producing electron holes by incident light and emitting electrons into the external vacuum atmosphere. CONSTITUTION: When light is applied on the b...
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JP05273256 |
PURPOSE: To obtain an insulator built-in type photo voltage sensor which can a ready-made standard insulator, allows the device to be assembled and adjusted easily, has a large designing freedom according to a voltage to be measured and ...
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JP05159740 |
PURPOSE: To improve quantum efficiency by providing the first photoelectron generating means and the second photoelectron generating means for generating a photoelectron by using at least light of not contributing to generation of the ph...
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JP05144409 |
PURPOSE: To lessen the dark current in a photomultiplier including a photoelectric surface, a multiplier for multiplying the photoelectrons emitted therefrom, and an anode electrode for collecting electrons, by providing a substrate ther...
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JP05110051 |
PURPOSE: To provide an electron multiplying device having an inner electron multiplying function and simple in structure and to easily realize a photoelectron emission device having an inner electron multiplying function and high in phot...
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JP05082076 |
PURPOSE: To provide a photo-tube which can effectively collect photo-electrons generated by a photo-electric cathode, and also provide a radiations sensing device which is equipped with a good sensing efficiency for radiations. CONSTITUT...
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JP05074406 |
PURPOSE: To provide a reflection type photoelectric surface and a photomultiplier both having high performance by interposing a Cr layer between an Ni electrode and an Al layer. CONSTITUTION: A Cr layer 2 is deposited with a fixed thickn...
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