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Patent Searching and Data


Matches 351 - 400 out of 2,700

Document Document Title
WO/2000/060324A1
The present invention provides a much more optimum design for an infrared pixel microstructure. The configuration of the microstructure itself is designed to optimum operational characteristics including faster speeds than previously ava...  
WO/2000/059047A1
The present invention embodies a solid state thermionic energy converter and is directed to a method and apparatus (10, 104, 108) for conversion of thermal energy to electrical energy, and electrical energy to refrigeration. The present ...  
WO/2000/054317A1
A method and apparatus for annealing an integrated ferroelectric device (10) is disclosed in which the device (10) comprises a first layer of material capable of existing in a ferroelectric state and a second layer of material defining a...  
WO/2000/051193A2
Disclosed are a rectifier of thermally moving electrons and a method for converting thermal energy into electric energy by rectifying thermally moving electrons. A rectifying surface of a current formed by an aggregate of minute rectifyi...  
WO2000015882A3
A method for switching properties of perovskite thin film materials, including the colossal magnetoresistive (CMR) and high temperature superconducting (HTSC) materials, is provided. Short electrical pulses are applied to the materials i...  
WO/2000/037892A2
A linear temperature sensor that incorporates passive bipolar semiconductor devices (D1, D2, D3, D4, C1) and is capable of high accuracy over a very wide temperature range. The passive bipolar semiconductor device splits a voltage drop b...  
WO/2000/036656A1
When the temperature of pyroelectric film is increased from low to high near its phase transition temperature its ability to hold electrical charge on its surfaces diminishes, and the charge can be drawn as current through an external lo...  
WO1999059190A3
A semiconductor manufacturing tool configuration and corresponding process for applying one or more levels of interconnect metallization to a generally planar dielectric surface of a semiconductor workpiece with a minimal number of workp...  
WO/2000/015882A2
A method for switching properties of perovskite thin film materials, including the colossal magnetoresistive (CMR) and high temperature superconducting (HTSC) materials, is provided. Short electrical pulses are applied to the materials i...  
WO/1999/059190A2
A semiconductor manufacturing tool configuration and corresponding process for applying one or more levels of interconnect metallization to a generally planar dielectric surface of a semiconductor workpiece with a minimal number of workp...  
WO/1999/050913A1
A method for fabricating a wafer-pair having at least one recess in one wafer and the recess formed into a chamber with the attaching of the other wafer which has a port plugged with a deposited layer on its external surface. The deposit...  
WO/1999/009383A1
An infrared detector includes a first thermal insulation layer (14) disposed between an etch stop layer (20) and an active substrate (10). The first thermal insulation layer is a xerogel, and is preferably an aerogel. A pixel having at l...  
WO/1999/007021A1
A technique for enhancing the generation of carriers (ex. Electrons and/or holes) in semiconductor devices such as photovoltaic cells and the like, receiving radiation from a heated surface, through the use of micron juxtaposition of the...  
WO/1998/054554A1
A thermal detector device comprising an array of thermal detector elements, an array of microbridge structures comprising the array of thermal detector elements, readout silicon integrated circuitry (ROIC) and an interconnect layer on wh...  
WO/1998/052227A1
At the time of manufacturing a plurality of dielectric thin film elements by successively forming a base layer and a dielectric thin film on a substrate and dividing the thin film into a plurality of blocks each having a prescribed shape...  
WO/1998/052235A1
A process for manufacturing a plurality of dielectric thin film elements by forming an undercoating on a substrate, stacking a dielectric thin film on the undercoating, forming the dielectric thin film into a plurality of predetermined s...  
WO1998036395A3  
WO/1998/036395A2
The invention relates to a device for producing coded high-frequency signals, comprising a converter which converts environmental non-electrical primary energy into electrical energy, an element with nonlinear characteristic curves coupl...  
WO/1997/030508A1
The present invention embodies a piezo-pyroelectric energy converter (10) and is directed to a method and apparatus for conversion of thermal energy to electrical energy and electrical energy to refrigeration. The present invention utili...  
WO/1997/009746A1
A thermally stable, piezoelectric and pyroelectric polymeric substrate was prepared. This thermally stable, piezoelectric and pyroelectric polymeric substrate may be used to prepare electromechanical transducers, thermomechanical transdu...  
WO/1996/031640A1
Quasi-crystalline alloy thin films are disclosed. Each quasi-crystalline alloy thin film is characterised in that its thickness is of 0.01-10 'mu'm, and in that the quasi-crystalline alloy consists of one or more quasi-crystalline phases...  
WO/1996/024165A1
A thermal detector (B) includes a transducer layer (2) of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodim...  
WO/1996/021248A1
An array for projecting thermal images and a method of making same. The array of the present invention combines a two-tier architecture created with special processing whereby each pixel member (12) resides on an elevated platform direct...  
WO/1996/010263A1
A thermal sensing polymeric device (110) such as a capacitor is fabricated from a layer of a copolymeric material (112) including polyvinylidene fluoride and a fluorinated ethylene. The fluorinated ethylene may be selected from the group...  
WO/1995/030135A1
A piezoelectric device having two piezoelectric films (10, 12) bonded together to form a laminate structure by an adhesive (14) with their like polarization surfaces oriented towards each other. Where metallized surfaces (16, 18) are pro...  
WO/1995/022188A1
Fault tolerant thermoelectric device circuit (18) is provided including a plurality of thermoelectric elements (19, 20, 21, and 22) and a plurality of secondary by-pass circuits (24, 25, 26, and 27) coupled in parallel with a number of t...  
WO/1995/002904A1
A new type of pyrodetector element epitaxially grown by means of buffering layers on a monocrystalline silicium substrate allows an array of pyrodetectors to be produced with a read-out and amplification circuit integrated on a common su...  
WO/1995/001450A1
Esters in which the alcohol part is sterically hindered around the ester bond, i.e. derived from tertiary alcohols are enzymatically prepared under low water conditions using Candida antarctica lipase A or a lipase species having a subst...  
WO/1994/007115A1
An infrared detector array wherein infrared detectors are arranged in a high density and each detector has a low thermal capacity. An insulating film (2) is disposed on the surface of a silicon substrate having a (100)-plane as its upper...  
WO/1994/003908A1
A method of forming crystalline metal oxide thin films on silicon and the resultant structure. A crystalline buffer layer (10) of yttria-stabilized zirconia is deposited on a silicon substate (12). A thin template layer (14) of an anisot...  
WO/1994/001743A1
A microstructure design for high IR sensitivity having a two level infrared bolometer microstructure, the lower level having a reflective metal film surface such as Pt, Au, or Al to reflect IR penetrating to that level, the upper level b...  
WO/1994/000879A1
Components such as pyroelectric sensors which are particularly sensitive to piezoelectric effects and can be adversely affected as a result by any mechanical stress or vibration are described. These adverse effects may be controlled by i...  
WO/1993/026051A1
A sensor element that is adapted to respond to radiation, and which is adapted to the manufacture of a sensor array is manufactured into a single crystal semi-conductor means such as silicon. An anisotropically etched pit is provided und...  
WO/1993/025877A1
In a microbolometer infrared radiation sensor, a detector material (VO2) having a high thermal coefficient of resistance to increase the sensitivity of the apparatus.  
WO/1993/025878A1
A thermal isolation microstructure fabricated by a process which allows the ultra thinning of support legs for the microdetector.  
WO/1993/020589A1
A reversible thermoelectric converter includes first and second quantum well diodes (10, 20) and an electrical connection between the diodes without a thermal barrier between them. Each diode includes first and second electrodes (40, 42)...  
WO/1993/016750A1
A tube holding clamp (14) in the form of a cylinder open at both ends is attached at one end to a connection (16) which is attached to an adhesive member for attachment to the nose of a patient. The cylinder is slit (32) along its length...  
WO/1993/013561A1
A method for fabricating an integrated infrared sensitive bolometer having a polycrystalline element whereby an oxide region deposited on silicon nitride (24) covered with a first polysilicon layer (30) which is etched to provide a locat...  
WO/1993/009414A1
A thin film pyroelectric imaging array (N, M) fabricated as a Si wafer. A thin film (40) of PbTiO3 is deposited on a thermally isolated bridge (45). The bridge (45) suspends the PbTiO3 sensor (40) over a preferentially etched cavity (70)...  
WO/1993/009570A1
A thermoelectric device for cooling a mass; the device comprising a capacitor having two electrodes and being in thermal contact with the mass to be cooled. The capacitor produces a cooling effect when it is repeatedly isothermally charg...  
WO/1992/019564A1
Amorphous ferroelectric materials are formed by a sol-gel type process and the ferroelectric properties stabilized by complete hydrolysis and polycondensation, and extraction of residual organic materials, preferably by heating at temper...  
WO/1991/016607A1
A thermal infrared detector comprising a dielectric pellicle (5) suspended over a cavity in a substrate (6), the pellicle supporting a detector element (1) comprising a heat sensitive semiconductor layer (3) between a pair of thin film m...  
WO/1991/008593A1
A semiconductive structure where the relationship between the admixture concentrations is such that the number of carriers generated by an admixture of first-type conductivity and compensated by a third admixture is essentially equal to,...  
WO/1990/006495A1
A thermal detector is provided in which a material sensitive to received thermal radiation to produce an electrical response has contacts to signal electrodes on one surface only of the detector material.  
WO/1989/000754A1
In a process for manufacturing a material having predetermined dielectric, pyroelectric and/or magnetic properties use is made of the fact that the electrical properties of mesoscopic particles (approximately 1 nm to 100 nm), for example...  
WO/1988/004475A1
Multi-layer piezoelectric/pyroelectric elements and methods of manufacturing these elements. Producing multi-layer devices required many steps such as laminating. Laminating processes often resulted in undesirable short circuiting of the...  
WO/1988/001793A1
A pyroelectric focal plane array useful for thermal imaging applications comprises a detector (10), comprises a reticulated and aluminized pyroelectric chip (12) interfaced with a signal processor chip (14) by thermally insulating bumps ...  
WO/1988/000132A1
Process for making polarized material by forming a solution of a material capable of being polarized with a polarization solvent which can be removed by evaporation. The material in solution is poled to provide a polarized material which...  
WO/1987/000347A1
Novel Langmuir-Blodgett (LB) films of ABAB structure in which the compounds A and B are different and contain complementary groups which result in non-centrosymmetry of the layer plane. Three types of structure are described (i) in which...  
WO/1983/000404A1
A method of manufacturing a pyroelectric unit which includes the steps of imparting a temperature change to pyroelectrically coupling particles dispersed between a pair of opposed electrodes (13, 14) applied by an electric field before t...  

Matches 351 - 400 out of 2,700