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WO/2002/013283A1 |
The invention concerns a method for making a plurality of pyroelectric sensors by forming a thin pyroelectric film (8) at the surface of a silicon (18) wafer wherein is provided an electric polarisation of said film between lower (10) an...
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WO/2002/012848A1 |
The invention concerns a pyroelectric sensor comprising a plurality of pixels (12A) each consisting of a thin pyroelectric film (20A) and first and second electrodes (14, 28) arranged on either side of said film. The lower electrodes (20...
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WO/2002/009202A2 |
At least one bottom electrode (U), a piezoelectric or pyroelectric layer (S) over said bottom electrode and a top electrode (O) over said layer are produced as parts of the layer sequence. The bottom electrode (U) is produced by depositi...
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WO/2002/009131A2 |
The sequence of layers has a lower electrode (U), an upper electrode (O) and a piezoelectric or pyroelectric layer (S) which is located between them. An auxiliary layer (H) is located between the lower electrode (U) and said layer (S), s...
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WO/2001/081879A2 |
A microbolometer is provided that includes an absorber element having material properties to change temperature in response to absorbing infrared radiation. An amorphous silicon detector is thermally coupled to the absorber element and i...
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WO/2001/073386A1 |
The invention relates to a device for detecting thermal radiation (3), comprising at least one thermal detector element (2) that converts the thermal radiation into an electric signal (4). The inventive device is further provided with at...
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WO/2001/069318A1 |
A ceramic blank is disclosed, in particular a ceramic blank film (10), with an, at least partially, applied platinum-containing functional layer (12), which may be photostructured under the influence of daylight and in the presence of ox...
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WO/2001/055055A1 |
The invention relates to a passive high-temperature resistant resistance element for measuring temperature consisting of an insulation layer (9; 10), which is essentially located in the interior, and of two conductive layers (8), which a...
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WO/2001/054189A1 |
The invention concerns a method of combining components to form an integrated device, wherein said components are provided on a first sacrificial wafer, and a second non-sacrificial wafer, respectively. The sacrificial wafer carries a fi...
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WO/2001/047004A1 |
A method for fabricating device chips from a thin sheet of pyroelectric material comprising the steps of forming device forming regions each having an electrode and circuit patterns for interconnecting the electrodes on both sides of a t...
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WO2000015882A9 |
A method for switching properties of perovskite thin film materials, including the colossal magnetoresistive (CMR) and high temperature superconducting (HTSC) materials, is provided. Short electrical pulses are applied to the materials i...
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WO/2001/040850A1 |
This invention relates to the production of free-standing liquid crystal elastomer films, in particular of large area for use in various devices. Example of devices include piezo and pyroelectric devices. The method of production involve...
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WO/2001/035467A1 |
A microbolometer comprising a support substrate having an interrogation surface, a film of a temperature sensitive magnetic material (10), is spaced from the interrogation surface a predetermined distance. An interrogation inductor (11),...
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WO/2001/020280A1 |
A two level microbridge infrared thermal detector having an upper detector planar section (a) comprising a temperature responsive detector of an oxide of vanadium having a high TCR and a resistivity in the range of 20K ohms to 50K ohms p...
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WO/2001/014838A1 |
A method of fabricating a micro-bridge device (14, 16) onto a substrate (20). The method includes the steps of: providing a sacrificial material (32) on a surface region of the substrate (20); patternwise etching the sacrificial material...
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WO/2000/072385A1 |
SiC (6), preferably in single crystal form, is employed as an IR radiation sensor with high temperature and power capabilities. Applications include sensing the power or energy from an IR radiation source (2).
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WO/2000/065643A1 |
A method of forming lead zirconate titanate thin films having a perovskite phase suitable for silicon signal processing circuitry by drying and firing one or more layers of a lead zirconate titanate precursor sol gel applied to a substra...
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WO/2000/064038A1 |
An apparatus for performing a thermodynamic cycle comprising: a sample having a ferromagnetic phase transition temperature; means to magnetise the sample above the ferromagnetic phase transition temperature of the sample; and means to co...
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WO/2000/062028A2 |
A system and method for analysing a material using infra-red radiation are described, along with an infra-red detector for use with the system and the method. The system (10) comprises a rectangular housing (42) to which an elongated pro...
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WO/2000/060324A1 |
The present invention provides a much more optimum design for an infrared pixel microstructure. The configuration of the microstructure itself is designed to optimum operational characteristics including faster speeds than previously ava...
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WO/2000/059047A1 |
The present invention embodies a solid state thermionic energy converter and is directed to a method and apparatus (10, 104, 108) for conversion of thermal energy to electrical energy, and electrical energy to refrigeration. The present ...
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WO/2000/054317A1 |
A method and apparatus for annealing an integrated ferroelectric device (10) is disclosed in which the device (10) comprises a first layer of material capable of existing in a ferroelectric state and a second layer of material defining a...
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WO/2000/051193A2 |
Disclosed are a rectifier of thermally moving electrons and a method for converting thermal energy into electric energy by rectifying thermally moving electrons. A rectifying surface of a current formed by an aggregate of minute rectifyi...
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WO/2000/037892A2 |
A linear temperature sensor that incorporates passive bipolar semiconductor devices (D1, D2, D3, D4, C1) and is capable of high accuracy over a very wide temperature range. The passive bipolar semiconductor device splits a voltage drop b...
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WO/2000/036656A1 |
When the temperature of pyroelectric film is increased from low to high near its phase transition temperature its ability to hold electrical charge on its surfaces diminishes, and the charge can be drawn as current through an external lo...
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WO/1999/059190A2 |
A semiconductor manufacturing tool configuration and corresponding process for applying one or more levels of interconnect metallization to a generally planar dielectric surface of a semiconductor workpiece with a minimal number of workp...
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WO/1999/050913A1 |
A method for fabricating a wafer-pair having at least one recess in one wafer and the recess formed into a chamber with the attaching of the other wafer which has a port plugged with a deposited layer on its external surface. The deposit...
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WO/1999/009383A1 |
An infrared detector includes a first thermal insulation layer (14) disposed between an etch stop layer (20) and an active substrate (10). The first thermal insulation layer is a xerogel, and is preferably an aerogel. A pixel having at l...
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WO/1999/007021A1 |
A technique for enhancing the generation of carriers (ex. Electrons and/or holes) in semiconductor devices such as photovoltaic cells and the like, receiving radiation from a heated surface, through the use of micron juxtaposition of the...
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WO/1998/054554A1 |
A thermal detector device comprising an array of thermal detector elements, an array of microbridge structures comprising the array of thermal detector elements, readout silicon integrated circuitry (ROIC) and an interconnect layer on wh...
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WO/1998/052227A1 |
At the time of manufacturing a plurality of dielectric thin film elements by successively forming a base layer and a dielectric thin film on a substrate and dividing the thin film into a plurality of blocks each having a prescribed shape...
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WO/1998/052235A1 |
A process for manufacturing a plurality of dielectric thin film elements by forming an undercoating on a substrate, stacking a dielectric thin film on the undercoating, forming the dielectric thin film into a plurality of predetermined s...
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WO/1998/036395A2 |
The invention relates to a device for producing coded high-frequency signals, comprising a converter which converts environmental non-electrical primary energy into electrical energy, an element with nonlinear characteristic curves coupl...
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WO/1997/030508A1 |
The present invention embodies a piezo-pyroelectric energy converter (10) and is directed to a method and apparatus for conversion of thermal energy to electrical energy and electrical energy to refrigeration. The present invention utili...
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WO/1997/009746A1 |
A thermally stable, piezoelectric and pyroelectric polymeric substrate was prepared. This thermally stable, piezoelectric and pyroelectric polymeric substrate may be used to prepare electromechanical transducers, thermomechanical transdu...
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WO/1996/031640A1 |
Quasi-crystalline alloy thin films are disclosed. Each quasi-crystalline alloy thin film is characterised in that its thickness is of 0.01-10 'mu'm, and in that the quasi-crystalline alloy consists of one or more quasi-crystalline phases...
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WO/1996/024165A1 |
A thermal detector (B) includes a transducer layer (2) of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodim...
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WO/1996/021248A1 |
An array for projecting thermal images and a method of making same. The array of the present invention combines a two-tier architecture created with special processing whereby each pixel member (12) resides on an elevated platform direct...
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WO/1996/010263A1 |
A thermal sensing polymeric device (110) such as a capacitor is fabricated from a layer of a copolymeric material (112) including polyvinylidene fluoride and a fluorinated ethylene. The fluorinated ethylene may be selected from the group...
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WO/1995/030135A1 |
A piezoelectric device having two piezoelectric films (10, 12) bonded together to form a laminate structure by an adhesive (14) with their like polarization surfaces oriented towards each other. Where metallized surfaces (16, 18) are pro...
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WO/1995/022188A1 |
Fault tolerant thermoelectric device circuit (18) is provided including a plurality of thermoelectric elements (19, 20, 21, and 22) and a plurality of secondary by-pass circuits (24, 25, 26, and 27) coupled in parallel with a number of t...
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WO/1995/002904A1 |
A new type of pyrodetector element epitaxially grown by means of buffering layers on a monocrystalline silicium substrate allows an array of pyrodetectors to be produced with a read-out and amplification circuit integrated on a common su...
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WO/1995/001450A1 |
Esters in which the alcohol part is sterically hindered around the ester bond, i.e. derived from tertiary alcohols are enzymatically prepared under low water conditions using Candida antarctica lipase A or a lipase species having a subst...
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WO/1994/007115A1 |
An infrared detector array wherein infrared detectors are arranged in a high density and each detector has a low thermal capacity. An insulating film (2) is disposed on the surface of a silicon substrate having a (100)-plane as its upper...
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WO/1994/003908A1 |
A method of forming crystalline metal oxide thin films on silicon and the resultant structure. A crystalline buffer layer (10) of yttria-stabilized zirconia is deposited on a silicon substate (12). A thin template layer (14) of an anisot...
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WO/1994/001743A1 |
A microstructure design for high IR sensitivity having a two level infrared bolometer microstructure, the lower level having a reflective metal film surface such as Pt, Au, or Al to reflect IR penetrating to that level, the upper level b...
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WO/1994/000879A1 |
Components such as pyroelectric sensors which are particularly sensitive to piezoelectric effects and can be adversely affected as a result by any mechanical stress or vibration are described. These adverse effects may be controlled by i...
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WO/1993/026051A1 |
A sensor element that is adapted to respond to radiation, and which is adapted to the manufacture of a sensor array is manufactured into a single crystal semi-conductor means such as silicon. An anisotropically etched pit is provided und...
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WO/1993/025877A1 |
In a microbolometer infrared radiation sensor, a detector material (VO2) having a high thermal coefficient of resistance to increase the sensitivity of the apparatus.
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WO/1993/025878A1 |
A thermal isolation microstructure fabricated by a process which allows the ultra thinning of support legs for the microdetector.
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