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WO/2006/135742A2 |
An electro-hydraulic valve apparatus includes a flow channel, a hydraulic control channel defining an electro-hydraulic valve junction where the hydraulic control channel is adjacent to the flow channel, a flexible wall between the flow ...
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WO/2006/135743A2 |
A microfluidic device includes a substrate including multiple electro-hydraulic valves and/or electro-hydraulic pumps that each include a flow channel and one or more hydraulic control channels, actuators for controlling the electro-hydr...
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WO/2006/132161A1 |
Disclosed is a low-cost integrated device comprising a sensor or the like formed in a &gammad -alumina layer epitaxially grown on a silicon substrate. This integrated device comprises a silicon substrate, a first functional region formed...
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WO/2006/132155A1 |
An electronic device includes: at least one heat sensitive unit (13) having a first contact unit (24) and changing its physical characteristic by receiving irradiation of infrared rays; a detection circuit unit having a second contact un...
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WO/2006/116323A2 |
Diamond-like carbon based thermoelectric conversion devices and methods of making and using the same which have improved conversion efficiencies and increased reliability. The device can include a cathode (25) having a base member (60) w...
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WO/2006/106910A1 |
[PROBLEMS] To provide a method for producing a semiconductor porcelain composition which can shift the Currie temperature to the positive direction without the use of Pb and can produce a semiconductor porcelain composition being markedl...
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WO/2006/085929A2 |
A thermoelectric material having enhanced Seebeck coefficient is characterized by a microstructure comprising nanoscale Pb inclusions dispersed in matrix substantially composed of PbTe. The excess Pb is obtained either by adding Pb in an...
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WO/2006/062582A2 |
A thermoelectric material comprises two or more components, at least one of which is a thermoelectric material. The first component is nanostructured, for example as an electrically conducting nanostructured network, and can include nano...
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WO/2006/058417A1 |
A process for purifying a P(VDF-TrFE) copolymer to produce an improved high performance copolymer for pyroelectric conversion. Pellets of a P(VDF-TrFE) copolymer are dissolved in a solvent to form a solution. Subsequently, anhydrous etha...
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WO/2006/057191A1 |
Disclosed is an infrared sensor with high mechanical impact strength which can be easily and surely mounted for various purposes. Specifically disclosed is an infrared sensor (1) comprising a base member (10) arranged at the bottom, an i...
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WO/2006/036444A2 |
A thermoelectric composition comprises a material represented by the general formula (AgaX1-a)1±x (SnbPbl-b)m M’1-yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M' is a trivalent element selected from the gr...
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WO/2006/007830A1 |
Disclosed is a method for producing a thin piezoelectric or pyroelectric layer on a substrate, comprising the following steps: a polymer solution is produced by dissolving a polymer in an organic solvent; a ceramic powder suspension is p...
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WO/2006/009174A1 |
Disclosed is a method for manufacturing an infrared sensor (1) which comprises a step for preparing a base (20) wherein a plurality of supporting sections (22a, 22b) composed of a material having low thermal conductivity and a first elec...
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WO/2005/116594A1 |
On a pyroelectric board (1), single elements (35A, 24A, 24B, 35B) are successively arranged in a horizontal direction. The single elements (24A, 24B) form a first dual element (24), and the single elements (35A, 35B) form a second dual e...
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WO/2005/112139A2 |
A surface-plasmon-coupled thermoelectric apparatus includes a first surfaceplasmon substrate and a thermoelectric substrate electrically coupled to a plurality of electrodes. The substrates are electrically isolated from each other, an...
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WO/2005/101537A2 |
A thermoelectric device (100, 342) that includes at least one thermoelectric couple (118, 304) that contains a thermoelectric junction (156) between two dissimilar materials (P, N) that allow exploitation of either the Seebeck effect or ...
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WO2005071765B1 |
A vertical, thin-film thermoelectric device (101) is described. In at least one embodiment of the present invention, phonon transport is separated from electron transport in a thermoelectric element of a thermoelectric device. A thermoel...
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WO/2005/078399A1 |
An infrared imaging element comprising a plurality of pixel cells (1a-1d) arranged one-dimensionally or two-dimensionally, characterized in that each pixel cell includes a thermal resistor composed of a strong correlation electron based ...
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WO/2005/067031A1 |
A method of producing a device with a ferroelectric crystal thin film on a first substrate (12) comprises the steps of providing a ferroelectric crystal (1), of irradiating a first surface of said ferroelectric crystal with ions (2) so t...
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WO/2005/047560A1 |
In the field of functional devices such as thermoelectric converters, bases suitable for epitaxial growth are not always bases desirable for use. In the present invention, a certain layered structure formed on a base is separated therefr...
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WO/2005/041246A1 |
Disclosed is an infrared light emitting device (A) comprising a semiconductor substrate (1), a heat insulating layer (2) having a heat conductivity sufficiently lower that that of the semiconductor substrate (1) and formed on one surface...
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WO/2005/038097A1 |
A process characterized in that an LT substrate obtained by forming lithium tantalate crystal grown by the Czochralski method into a substrate is buried in a powdery mixture of Al and Al2O3 and heat treated at a temperature maintained at...
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WO/2005/038099A1 |
A method for producing a lithium tantalate substrate is characterized in that an LT substrate, which is obtained by processing a lithium tantalate crystal grown by the Czochralski method into a substrate form, is buried in a mixed powder...
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WO/2005/036662A1 |
A thermoelectric transducer comprises an emitter (1) that emits electrons by heat and electric field actions, a collector (2) disposed opposite to the emitter (1) and serving to collect electrons emitted from the emitter (1), and an elec...
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WO/2005/031780A2 |
The present invention discloses a tunneling diode having a band gap material as the collector. This increases the tunneling of electrons having greater energy than the Fermi level from emitter to collector, leading to an increase in the ...
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WO/2005/020340A2 |
A number of compact, high-efficiency and high-power density thermoelectric systems utilizing the advantages of thermal isolation are described. Such configurations exhibit high system efficiency and power density. Some configurations exh...
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WO/2005/008073A1 |
A thermal electric power generation apparatus (100) has an electron emitting member (2) that emits electrons (e) when heat is applied to the member and electron collecting member (3) that collects electrons emitted from the electron emit...
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WO/2004/111552A2 |
The present invention is a tunnel diode, in which the space between the emitter electrode and the collector electrode is occupied by a porous material which has a thickness less then the free mean free path of an electron in the porous m...
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WO/2004/084322A1 |
A semiconductor element, a semiconductor sensor and a semiconductor memory element in which an MFMIS structure having a lower electrode can be integrated with an integrated circuit. A &gammad -Al2O3 single crystal film (2) is grown epita...
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WO/2004/079311A1 |
An SiO2 layer (3), a Ti layer (4), a Pt layer (5), a PLZT layer (6) and an IrO2 layer (7) are formed sequentially on an Si substrate (2). The IrO2 layer (7) functioning as an upper electrode has a thickness of about 100 nm. Since the IrO...
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WO/2004/068604A1 |
A heat switching device which has a completely different structure from those of conventional heat switching devices and is capable of controlling heat transfer through application of energy is disclosed. The heat switching device compri...
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WO/2004/061983A1 |
An electronic device and a method of manufacturing the electronic device, the method comprising the steps of forming etching holes (21) in a polysilicon film (14) formed in a hollow wall member, filling hydrofluoric acid from the etching...
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WO/2004/061984A1 |
The invention relates to an asynchronous generator with galvano-magnetic-thermal effect. The inventive generator comprises: means (4, 10) of generating a magnetic field in a first direction; a hot source (6) and a cold source (8), thereb...
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WO/2004/054004A1 |
An end face sensor device and a method of producing the sensor device, where the sensor device has flexibility or bendability independent of its shape and is suitable for constructing various devices with desired shapes. The end face sen...
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WO/2004/051760A1 |
A pyroelectric device comprises a first electrode layer, a pyroelectric layer having a perovskite crystal structure, and a second electrode layer sequentially formed on a substrate in this order. The first electrode layer is composed of ...
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WO/2004/044951A2 |
Apparatus providing at least one thermoelectric device for pressurizing a liquefied gas container and methods employing same are disclosed. A thermoelectric device including a heating surface and a cooling surface is used for pressurizin...
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WO/2004/038904A1 |
Thermal energy can be directly converted into electric energy with no pressure difference generated between the high-temperature side and the low-temperature side of an electrolyte. A solid electrolyte (101) consisting of β” alumina i...
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WO/2004/036724A2 |
Tunneling-effect converters of thermal energy to electricity with an emitter and a collector separated from each by a distance that is comparable to atomic dimensions and where tunneling effect plays an important role in the charge movem...
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WO/2003/093778A1 |
A temperature sensor of durable construction is disclosed, which may be simply installed and packaged, is uncomplicated to produce and with which rapid changes in temperature may be reliably recorded. The temperature sensor (1) comprises...
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WO/2003/094249A1 |
Apparatuses and methods for vaporizing a liquid cryogen (310) and producing electric power, as well as devices and methods for improving the thermal contact between thermoelectric devices and heat transfer surfaces using positive and/or ...
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WO/2003/063258A1 |
A semiconductor device keeps the base material of a semiconductor substrate (2) partially removed from the rear in a partial region of a wiring to a semiconductor element (2) arranged on the surface of a semiconductor substrate (1) to fr...
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WO/2003/056639A1 |
A casing (11) has a built-in heat exchange mechanism (12) having a thermoelectric device (20). The interior of the casing (11) has a primary channel (15) where a first air system flows and a secondary channel (16) where a second air syst...
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WO/2003/011747A1 |
This invention provides a front-side silicon micromachining process for the fabrication of suspended Porous Silicon membranes in the form of bridges or cantilevers and of thermal sensor devices employing these membranes. The fabrication ...
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WO/2003/005317A1 |
The invention relates to a supply device (GEN), comprising at least one pyroelectric voltage generator (l), which is characterised in that a highly-resistive threshold circuit (2) and a voltage transformer circuit (3) are provided in ULP...
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WO/2003/001158A1 |
The invention relates to a mass flow sensor comprising a layer construction on the top side of a silicon substrate (1) and comprising at least one heating element (8) that is structured out of a conductive layer in the layer construction...
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WO/2002/101843A1 |
The invention concerns an infrared sensor (2) comprising a plurality of pixels (12) having a structured layer (20) for infrared light absorption located at the sensor upper surface. The invention is characterised in that the absorption l...
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WO/2002/099372A2 |
A microbolometer unit cell (10) includes a substantially planar upper−level incident radiation absorption and detection structure (24), a substantially planar middle−level radiation reflection structure (26) spaced apart from the upp...
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WO/2002/047127A2 |
High quality epitaxial layers of monocrystalline materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of mono...
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WO/2002/039503A1 |
This invention relates to a portable, environmental friendly cell that can automatically convert some forms of energy in the nature, such as light, heat, electromagnetic wave (for example sound wave) etc. into electric energy. The cell e...
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WO/2002/017406A1 |
A thermoelectic conversion element enhanced in Seebeck coefficient by applying a magnetic field to a thermoelectric (electrothermal) conversion material having a large Nernst effect. When a magnetic field is applied to a Bi group thermie...
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