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JP5877445B2 |
A resistance switching device having a high resistance variation ratio, an excellent response characteristic, an excellent resistance memory characteristic (retention characteristics) and an excellent repeat resistance. The resistance sw...
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JP5874905B2 |
To provide a resistance change memory element of metal-insulator (resistance change layer)-metal (MIM) structure in which the operation (formation of a filament) of forming or electron injection into a deficit is not required when formin...
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JP5871313B2 |
To provide at high yield a ReRAM, having a rewriting speed faster than predicted before, and capable of handling high capacity data with high reliability, by establishing an operation mechanism as ontology of ReRAM based on quantum mecha...
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JP5873981B2 |
A method of manufacturing a variable resistance nonvolatile memory device includes: forming, above a substrate, a metal-semiconductor-metal (MSM) diode element; forming a variable resistance element on the MSM diode element; forming a fi...
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JP5870634B2 |
To provide a nonvolatile memory in which the reliability of reading and writing data to/from a memory cell is enhanced.The nonvolatile memory is a resistance change memory having a memory cell array of basic units each consisting of two ...
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JP5869092B2 |
To provide a semiconductor device which includes: resistance change films; a resistance random storage element that decreases cross sections of lower electrodes in a current flowing direction and allows a large current to flow through a ...
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JP5869091B2 |
To provide a structure of a memory which allows a large current to flow in a selection transistor and has resistance random storage elements.A semiconductor device comprises: first columnar silicon layers 129, 131, 132, 134; a first gate...
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JP5864713B2 |
To provide a memory structure in which resetting can be performed by a reset gate and the cross-sectional area of a resistance change film and a lower electrode in the direction in which current flows can be decreased.A semiconductor dev...
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JP5863302B2 |
A method forms a two terminal device. The method includes forming a first dielectric material overlying a surface region of a substrate. A bottom wiring material is formed overlying the first dielectric material and a switching material ...
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JP5858350B2 |
Embodiments of the present disclosure describe techniques and configurations for increasing thermal insulation in a resistance change memory device, also known as a phase change memory (PCM) device. In one embodiment, an apparatus includ...
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JP5859121B2 |
The present disclosure includes memory cell structures and method of forming the same. One such memory cell includes a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode, a...
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JP2016024841A |
To provide a nonvolatile storage device enabling appropriate control, and further to provide a control method thereof.A nonvolatile storage device includes: a memory cell being interposed between a pair of pieces of wiring and including ...
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JP5851030B2 |
The purpose of the present invention is to provide a semiconductor storage device, which has small resistance in the ON state, and a small leak current in the OFF state, and which has a small-sized select transistor used therein. In this...
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JP2016015397A |
To enhance the characteristics of a semiconductor memory (resistance-changing device).A method for manufacturing a semiconductor memory comprises the steps of: forming a Ru film by a sputtering method or the like as a lower electrode LE;...
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JP5849577B2 |
To provide a resistance change element capable of obtaining high reliability and high density, preventing incorrect writing and malfunction.The resistance change element includes a lamination structure having a first electrode (201), a r...
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JP5846906B2 |
A vertical phase change memory cell (2) has an active region (24) of phase change memory material defined either by providing a contact extending only over part of the phase change memory material or an insulating layer exposing only par...
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JP5845083B2 |
A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase chan...
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JP5846240B2 |
An integrated circuit system, and a method of manufacture thereof, including: an integrated circuit die having an address switch; a bottom electrode contact, free of halogen constituents, characteristic of a chemical vapor deposition or ...
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JP2016004589A |
To provide a resistance change type memory device which has a configuration and a structure capable of obtaining a stable reference resistance value without largely increasing the number of reference elements.A resistance change type mem...
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JP5840505B2 |
According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method of manufacturing a semiconductor device, a first layer containing Si is formed on a semiconductor substrate. An impurity region and ...
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JP5838012B1 |
The columnar insulator layer (180-183), the phase change film (189-192) formed around the upper part of the columnar insulator layer, and the phase change film formed around the lower part of the columnar insulator layer. Two or more row...
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JP2015228271A |
To provide a resistance change type nonvolatile storage device that allows a low voltage operation and downsizing, and further stably performs a reading determination operation, and to provide a reading method of the resistance change ty...
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JP5832057B1 |
Two or more rows of storage elements having a columnar phase change layer (176a-176d), a reset gate insulating film (182) surrounding the columnar phase change layer, and a reset gate (183) surrounding the reset gate insulating film. Res...
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JP5831687B2 |
A memory device includes a plurality of memory elements, each having a first electrode, a second electrode, and a memory layer between the first electrode and the second electrode. The plurality of memory layers are in a dotlike pattern....
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JP5829317B2 |
A method for fabricating a phase change memory pore cell that includes forming a bottom electrode, forming a dielectric layer on the bottom electrode, and forming a sacrificial layer on the dielectric layer. The method further includes s...
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JP2015220465A |
To provide a high density two terminal memory architecture which enjoys the benefit of the performance of a two terminal memory, and can be manufactured at a relatively low cost.A two terminal memory architecture is formed on a substrate...
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JP5826835B2 |
A method for operating a phase change memory that includes initializing a memory cell that includes: a first conductive electrode having a length greater than its width and an axis aligned with the length; a second conductive electrode h...
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JP5826779B2 |
According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell which stores data with two or more levels. The memory cell includes a structure includes a first electrode layer, a first semiconductor layer, ...
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JP5827414B2 |
The present invention relates to micro- and nano-electronics devices based on non-conventional materials. Such memristor devices with stable and reproducible characteristics can be used in the production of computer systems based on the ...
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JP5826074B2 |
The present invention provides a resistive memory element (10) comprising a top electrode element (12) lying in a plane parallel to a reference plane, and having, in perpendicular projection on the reference plane, a top electrode projec...
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JP5823833B2 |
A first ReRAM unit having a resistance change layer is provided between a first access transistor configuring the SRAM and a first bit line, and a second ReRAM unit having a resistance change layer is provided between a second access tra...
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JP5819822B2 |
A non-volatile memory cell and associated method is disclosed that includes a non-ohmic selection layer. In accordance with some embodiments, a non-volatile memory cell consists of a resistive sense element (RSE) coupled to a non-ohmic s...
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JP5814867B2 |
A semiconductor storage device includes word lines extending in first and second directions, and separated from each other in a third direction, sense amplifier circuits that partially overlap the word lines in the third direction, memor...
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JP5810056B2 |
According to one embodiment, a memory device includes a first interconnect, a second interconnect and a pillar connected between the first interconnect and the second interconnect. The pillar includes a first high-resistance layer, a sec...
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JP5809651B2 |
In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack...
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JP5808811B2 |
A resistive switching device. The device includes a first electrode comprising a first metal material overlying the first dielectric material and a switching material comprising an amorphous silicon material. The device includes a second...
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JP5807789B2 |
The present invention has an ion-conducting layer (11), and a first electrode (21) and a second electrode (22) respectively formed on front and reverse surfaces of the ion-conducting layer (11). The first electrode (21) is formed from a ...
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JP2015531996A |
A method of depositing an oxygen-deficient metal film having a predetermined oxygen deficiency on a substrate by a chemical reaction of at least one precursor is described. A typical method is to expose the substrate to a metal reaction ...
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JP5805275B2 |
Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a ...
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JP5799504B2 |
Disclosed is a semiconductor device with a built-in resistance change element that makes it possible to increase reliability, increase density, and decrease electrode resistance. Disclosed is a semiconductor device that has a resistance ...
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JP2015185605A |
To provide a resistance change element capable of stabilized operation, and a nonvolatile storage device.A resistance change element including first and second electrodes, first and second layers, and a metal part is provided. The first ...
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JP2015185771A |
To make it possible to increase reliability and achieve high density by preventing erroneous programming when changing a metal bridge type resistance change element from low resistance to high-resistance.When programming to make first an...
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JP5798025B2 |
A magnetic random access memory (MRAM) cell (1) comprising: a magnetic tunnel junction (2) comprising a tunnel barrier layer (22) between a first magnetic layer (21) having a first magnetization direction, and a second magnetic layer (23...
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JP5796079B2 |
A memristor includes a first electrode formed of a first metal, a second electrode formed of a second material, wherein the second material comprises a different material from the first metal, and a switching layer positioned between the...
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JP5798052B2 |
To provide a storage device with small variation of a switching operation.A storage device according to an embodiment comprises a first electrode, a second electrode, and a resistance change film connected between the first electrode and...
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JP5794231B2 |
A semiconductor device includes multilayer interconnects and two variable resistance elements (22a, 22b) that are provided among the multilayer interconnects and that include first electrodes (5), second electrodes (10a, 10b), and variab...
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JP5790660B2 |
A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing laye...
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JP2015173224A |
To provide a programmable logic device capable of preventing erroneous rewriting of a memory which is in operation.The programmable logic device includes: a first memory element which has a first electrode connected to first wiring, a se...
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JP5788274B2 |
A resistance change nonvolatile memory device, includes: a first wiring; an interlayer insulating layer formed over the first wiring; and a second wiring formed over the interlayer insulating layer, wherein the interlayer insulating laye...
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JP2015170852A |
To provide a non-volatile storage capable of preventing interference among neighboring memory cells in a 3 dimensional structured ReRAM.Plural first wirings are disposed in a first direction and a second direction crossing each other and...
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