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JP6602328B2 |
According to one embodiment, a semiconductor includes a first wiring, a second wiring, a first electrode, a second electrode and a memory cell. The first wiring extends in a first direction. The second wiring extends in a second directio...
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JPWO2018123678A1 |
In order to provide a metal cross-linked resistance changing element suitable for high-density integration with reduced switching voltage and its variation, a metal precipitation type resistance changing film and a first surface of the r...
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JP6598166B2 |
In order to obtain a phase-change material having a novel composition suitable for obtaining a highly practical phase-change type memory element, and a phase-change type memory element using the same, a phase-change material comprises Cr...
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JP6594464B2 |
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a first source/drain ...
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JP6594945B2 |
In accordance with an example embodiment of the present invention, a device is disclosed. The device comprises: a sensing region comprising an active material and two or more electrodes in electrical contact with the active material; and...
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JP2019179499A |
To provide a semiconductor device and a product-sum computation device which further reduce a mounting area per synapse, and thereby enable integration with higher density.A semiconductor device comprises: a plurality of synapses in whic...
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JP2019169571A |
To provide a storage device with reduced memory cell current.A storage device 100 includes a substrate, a first insulating layer 12 extending in an x direction, a second insulating layer 14 extending in the x direction, a first conductiv...
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JP2019169214A |
To provide a high quality semiconductor storage device.A semiconductor storage device comprises a first charge unit charging an electrical charge based on current flowing through a memory cell, a second charge unit connected to the first...
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JP2019169591A |
To provide a semiconductor storage device capable of adjusting cell current of a memory cell.A semiconductor storage device of an embodiment includes: a substrate; a signal line extending in a first direction perpendicular to the substra...
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JP2019167274A |
To provide: a titanium suboxide that contains TiOwith a crystal structure that phase-transitions between a β phase and a λ phase, and can be manufactured at relatively low cost; and a process for producing titanium suboxide.The titaniu...
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JP2019169570A |
To provide a storage device with reduced contact resistance.A storage device of an embodiment comprises: a substrate; a plurality of insulation layers extending in a first direction; a plurality of first conductive layers extending in th...
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JP2019169569A |
To provide a storage device capable of reducing contact resistance.A storage device 100 comprises: a first lamination structure 10 including a plurality of first conductive layers 12 laminated along a Z direction and a first insulation l...
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JP2019169494A |
To provide a storage device and a manufacturing method thereof with high operational stability.A storage device includes a first semiconductor member. In the first semiconductor member, a first portion of a first conductivity type, a sec...
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JP2019165090A |
To provide a semiconductor device manufacturing method which enables the suitable adjustment of a film thickness of a film on a substrate and a semiconductor manufacturing machine.A semiconductor device manufacturing method according to ...
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JP2019165114A |
To provide a resistance change type storage device having high operational stability.The resistance change type storage device includes: a substrate; a plurality of electrodes arranged along a first direction parallel to an upper surface...
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JP2019165235A |
To provide a cross-point memory that reduces the disturbance of adjacent memory cells and a manufacturing method thereof.A cross-point memory array 120 includes a first memory cell pillar disposed between a lower conductor 22 and an uppe...
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JP2019164874A |
To provide a storage device capable of performing appropriate falling voltage control on a resistance change storage element.A storage device according to an embodiment comprises: a first circuit 10 including a resistance change storage ...
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JP2019165084A |
To provide a crosspoint element and a storage device capable of improving repetition characteristics.The crosspoint element includes: a first electrode; a second electrode disposed opposite to the first electrode; and a memory element, a...
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JP2019165161A |
To provide a resistance change element capable of improving the characteristics by obtaining enough resistance change for functioning as the resistance change element.A resistance change element 1 comprises: a columnar variable resistanc...
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JP2019165162A |
To provide a resistance change element capable of improving the characteristics by obtaining enough resistance change for functioning as the resistance change element.A resistance change element 1 comprises: a resistance change layer 2 t...
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JP2019161056A |
To reduce a writing voltage.A nonvolatile semiconductor memory device includes: a semiconductor substrate; a first wiring layer 10 provided to an upper direction of the semiconductor substrate, and extended to a first direction; a plural...
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JP2019161179A |
To provide a magnetic storage device capable of preventing degradation of retention characteristics of magnetoresistive effect element.The magnetic storage device comprises a first memory cell including: a magnetoresistive effect element...
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JP2019161061A |
To suppress increase of a chip area.A nonvolatile semiconductor memory device includes: a first wiring layer 10; a plurality of second wiring layers 14 provided to an upper direction of the first wiring layer 10, and arranged along a thi...
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JP6577490B2 |
Exemplary embodiments of the present invention are directed towards a method for fabricating a semiconductor memory device comprising selectively depositing a material to form a cap above a recessed cell structure in order to prevent deg...
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JP6577954B2 |
Some embodiments include a switching component which includes a selector region between a pair of electrodes. The selector region contains silicon doped with one or more of nitrogen, oxygen, germanium and carbon. Some embodiments include...
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JP2019149473A |
To provide a semiconductor memory device and a manufacturing method thereof capable of reducing an operating current supplied to a phase change material.In an embodiment, a semiconductor memory device includes a first electrode. The devi...
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JP2019145603A |
To allow for elimination of forming process, employment of MOS structure, and non-use of expensive metal as electrode material, in resistance change type semiconductor memory element.A resistance change type semiconductor memory element ...
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JP2019523999A |
Electrical switching techniques use line defects in crystalline materials that are otherwise undesirable in order to form conductive filaments. The switching cell includes a crystal layer arranged between the active electrode and another...
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JP2019145798A |
To provide a method for producing or fabricating a sensing device, or a method for producing or fabricating a sensor combined with a memristor.A method comprises: depositing two bottom electrodes 202; depositing an active material 203 ov...
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JP6567441B2 |
According to one embodiment, a memory device includes a superlattice structure portion containing first chalcogen-compound layers and second chalcogen-compound layers differing in composition from the first chalcogen-compound layers are ...
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JP6562445B2 |
To provide a resistance change element capable of being operated repeatedly while maintaining a high ON/OFF ratio.In a two terminal element whose resistance changes by oxygen vacancies moving in metal oxide through an electric field, amo...
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JP2019129239A |
To provide a storage element and a storage device that can realize increase of a capacity.A storage element according to an embodiment of the present disclosure comprises: a first electrode; a second electrode that is oppositely arranged...
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JP6552614B2 |
The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the firs...
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JP6553848B2 |
A semiconductor device includes gate structures spaced apart above a top surface of a substrate. The gate structures include a horizontal electrode extending in a first direction parallel with the top surface of a substrate. An isolation...
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JP6548003B2 |
A nonvolatile memory device includes: a pair of first wirings extending in a first direction; a second wiring extending in a second direction crossing the first direction; a pair of third wirings extending in the second direction; and a ...
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JP6550135B2 |
A memory device (and method of making and using the memory device) includes a first electrode of conductive material, a second electrode of conductive material, and a layer transition metal oxide material that includes first and second e...
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JP2019121663A |
To reduce a size of a nonvolatile variable resistance element having an all solid secondary battery structure.The variable resistance element has a laminated structure of an all solid secondary battery in which a lower electrode, a posit...
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JP6544555B2 |
The forming voltage of a variable resistance device used in a non-volatile memory and the like is decreased, and repetition characteristics are improved. In an element structure in which a metal oxide film 12 is sandwiched between a lowe...
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JP6545805B2 |
Disclosed technology relates generally to integrated circuits, and more particularly, to structures incorporating and methods of forming metal lines including tungsten and carbon, such as conductive lines for memory arrays. In one aspect...
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JP2019114644A |
To provide a memory device capable of reducing an operating current using a resistance change film.A storage device 1 includes: a filament type first resistance change film 12 which becomes a low resistance state by a current path being ...
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JP6543727B2 |
A non-destructive readout ferroelectric memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory are disclosed. The ferroelectric memory comprises a ferroelectric thin film layer...
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JP6535971B2 |
Devices and systems operable to generate random numbers are disclosed and described. Such include an array of phase change material cells electrically coupled to circuitry configured to initially set all cells in the array to a high stat...
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JP2019517131A |
The present invention relates to a method of manufacturing a layer of ReRAM memory and the use of an injector. According to the present invention, in order to manufacture a ReRAM memory, TMO layers are applied onto the electrodes in a de...
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JP6532207B2 |
A method for manufacturing a three-dimensional resistive memory array is disclosed. The method comprises forming a repetitive sequence (102) comprising an isolating layer (104), a semiconductor layer (106), a gate insulating layer (108),...
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JP6529051B2 |
Provided are a resonant tunneling diode element which is capable of ultrafast operation, has high manufacturability, and achieves low-loss and low-power consumption, and a non-volatile memory using the same. In the resonant tunneling dio...
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JP6524006B2 |
A semiconductor memory device of an embodiment includes a memory cell array. The memory cell array comprises: a semiconductor layer extending in a first direction; a plurality of conductive layers that face a side surface of the semicond...
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JP2019514195A |
The present invention a) provides a non-conductive substrate, b) arranges a first conductive path made of a conductive material on the substrate, c) dots a porous derivative having a redox active molecule on the first conductive path. D)...
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JP6517184B2 |
A memory element programmable between different impedance states can include a first electrode layer comprising a semimetal or semiconductor (semimetal/semiconductor); a second electrode; and a switch layer formed between the first and s...
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JP6518779B2 |
Some embodiments include a construction having a first memory array deck and a second memory array deck over the first memory array deck. The second memory array deck differs from the first memory array deck in one or more operating char...
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JP2019071152A |
To provide a storage device in which a memory cell is easily multi-valued.A storage device comprises a memory cell capable of achieving a resistance value of three or more level, a drive circuit determining a level of the resistance valu...
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