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JP6092431B2 |
The present disclosure includes memory cell structures and method of forming the same. One such method includes forming a memory cell includes forming, in a first direction, a select device stack including a select device formed between ...
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JP6086097B2 |
To provide a multi-value recording phase change memory element employing a novel multistage phase change material appropriate for multi-value recording.The multi-value recording phase memory element includes a memory layer including a fi...
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JP6088630B2 |
A resistive memory apparatus and a writing method thereof are provided. In the method, logic data is received, and a corresponding resistive memory cell is selected. A logic level of the logic data is determined. When the logic data is i...
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JP6084521B2 |
A phase-change device capable of realizing a multi-level record in a superlattice phase-change memory cell in which a superlattice phase-change material is used as a recording film, and thereby achieving the reduction in power consumptio...
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JP2017505504A |
Within the scope of the present invention, by applying a write voltage, it is possible to shift from a stable state (HRS) having a high resistance value to a stable state (low deposited state (LRS)) having a low resistance value. We have...
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JP2017037689A |
To improve rewriting efficiency of a complementary switch cell using two resistance change elements forming a pair, in a semiconductor device.A semiconductor device comprises: a complementary switch cell having bipolar type first switch ...
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JP6082383B2 |
A resistance change memory device with a high ON/OFF ratio can be provided. A resistance change memory device according to an embodiment includes a first electrode containing a first element, a resistance change layer provided on the fir...
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JP2017034223A |
To provide a resistance change type memory (ReRAM) including a substrate 110, a conductor layer 120, a resistance switching layer 130, a copper-containing oxide layer 140, and an electron supply layer 150.The conductor layer 120 is provi...
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JP2017033616A |
To provide an integrated circuit capable of reducing a defective rate.The integrated circuit comprises: three or more column wires CL-CL; row wires RL-RLintersecting with the column wires; and a plurality of first resistance change eleme...
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JP2017028678A |
To provide a function-programmable circuit and a method of operating the circuit.A function-programmable circuit comprises a microcontroller unit 110 and a field-programmable gate array 120. The field-programmable gate array is connected...
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JP6071825B2 |
A non-volatile memory device of an embodiment includes: a first conductive layer; a second conductive layer; a ferroelectric film provided between the first conductive layer and the second conductive layer; and a paraelectric film provid...
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JP6073836B2 |
Structures and formation methods of memory devices are provided. The memory device includes a first electrode, a second electrode, and a resistive layer positioned between the first electrode and the second electrode. The resistive layer...
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JP2017502494A |
The microelectronic package has a dielectric element with first and second parallel openings. The first microelectronic element has contacts that overlap over the first opening, and the second microelectronic element has contacts that ov...
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JP6061058B2 |
An electronic device includes a substrate, a channel portion, a first electrode, a second electrode, and a shape change generation portion. The channel portion is provided above the substrate and includes a phase transition material that...
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JP6062155B2 |
A phase change material comprises GexSbyTez, wherein a Ge atomic concentration x is within a range from 30% to 65%, a Sb atomic concentration y is within a range from 13% to 27% and a Te atomic concentration z is within a range from 20% ...
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JP6059349B2 |
Three dimension memory arrays and methods of forming the same are provided. An example three dimension memory array can include a stack comprising a plurality of first conductive lines separated from one another by at least an insulation...
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JP2017005097A |
To provide a memory device having a structure suitable for higher integration while ensuring easiness in manufacturing.The memory device 1 includes n memory cell units MU stacked in order from a first to n-th in a first direction Z on a ...
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JP2016541109A |
Porous memory devices such as memories or switches have a memory material layer (eg, SiO) that is placed between the top and bottom electrodes and between these electrodes.x) Can be provided. A nanoporous structure can be provided in the...
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JP6052916B2 |
To provide a semiconductor device in which a short circuit between neighboring bit lines is inhibited and an interlayer insulation film is smooth polished.A semiconductor device comprises: a memory cell region where resistive recording e...
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JP6050015B2 |
A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer includ...
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JP6048710B2 |
An encryption and recording apparatus storing data, the apparatus including: a first nonvolatile memory; a second nonvolatile memory; and an encryption and decryption control unit, wherein the encryption and decryption control unit: mana...
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JP6046096B2 |
A method for making phase change memory cell includes following steps. A carbon nanotube wire is located on a surface of the substrate, wherein the carbon nanotube wire includes a first end and a second end opposite to the first end. A b...
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JP6045983B2 |
To provide a semiconductor memory device with suppressed fluctuation of memory cell characteristics.A plurality of first conductive layers are stacked with a predetermined pitch in a first direction perpendicular to a substrate and exten...
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JP6044931B2 |
To provide a semiconductor memory device having diode characteristics.A semiconductor memory device 100 according to the present embodiment comprises: an n-type first semiconductor layer 10; an electron capture layer 20 formed on the fir...
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JP6041918B2 |
It is an object of the present invention to manufacture, with high yield, semiconductor devices in each of which an element which has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturin...
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JP6040544B2 |
To provide a functional element whose characteristic variations are reduced by performing a cleaning treatment while securing flatness of a copper wiring surface at an opening formed on copper wiring.A method for cleaning an exposed surf...
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JP6034980B2 |
A semiconductor device includes a memory transistor (10A) which is capable of being irreversibly changed from a semiconductor state where drain current Ids depends on gate voltage Vg to a resistor state where drain current Ids does not d...
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JP2016192510A |
To provide a resistance change element having reduced leak current in the OFF state and improved breakdown voltage at the time of reset.A variable-resistance element includes: a first electrode 1; a second electrode 2; and a resistance c...
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JP2016192514A |
To provide a storage device capable of suppressing interference among memory cells and a manufacturing method for the same.A storage device includes a plurality of first wires which are arranged in a first direction and a second directio...
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JP2016192478A |
To provide a storage device having little interference among memory cells.A storage device includes a first wiring extending in a first direction, a second wiring extending in a second direction crossing the first direction, a first laye...
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JP6021688B2 |
A memory cell is included which has a selection transistor and a variable resistance device connected to a bit line through the selection transistor. The variable resistance device includes a first electrode which has a first metal mater...
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JP6019220B2 |
Various embodiments include at least one resistance change memory (RCM) cell, In one embodiment, three or more pairs of electrical contacts are coupled to the at least one RCM cell. A first portion of the pairs are arranged laterally to ...
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JP6014753B2 |
Switching device structures and methods are described herein. A switching device can include a vertical stack comprising a material formed between a first and a second electrode. The switching device can further include a third electrode...
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JP6014521B2 |
A phase-change memory and a semiconductor recording reproducing device capable of reducing consumed power are provided. A SnxTe100-x/Sb2Te3 SL film obtained by depositing a SnxTe100-x film and a Sb2Te3 film layer by layer contains a SnTe...
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JP6009867B2 |
According to an embodiment, a non-volatile memory device includes a first conductive layer, a second conductive layer, and a resistance change layer provided between the first conductive layer and the second conductive layer. The resista...
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JP6009971B2 |
First conductive layers extend in a first direction horizontal to a substrate as a longitudinal direction, and are stacked in a direction perpendicular to a substrate. An interlayer insulating layer is provided between the first conducti...
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JP2016181312A |
To provide a resistance change memory that has high information retention resistance through improvement of the information retention resistance.On the assumption that a distinction between a special data storage memory and a general-pur...
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JP6007701B2 |
To provide a resistance variable memory and a driving method thereof which has less contamination in a semiconductor manufacturing line and which can achieve low cost and resource saving.A resistance variable memory comprises: an impurit...
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JP2016178195A |
To provide a recording device which has a small area and is inexpensive, and to provide a manufacturing method of the recording device.A recording device includes: a first wiring layer 120; a second wiring layer 130 provided above the fi...
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JP6002783B2 |
Some embodiments include memory cells which have first and second metal oxides between first and second electrodes. The first and second electrodes include metal. The first metal oxide has at least two regions which differ in oxygen conc...
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JP5999768B2 |
Disclosed is a semiconductor device (10) which is embedded with a non-volatile element (100) in which a state immediately preceding the supply of power is maintained even when power is no longer supplied. The non-volatile element (100) i...
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JP6000328B2 |
Provided is a resistive random access memory including a first electrode layer (102), a second electrode layer (106), and a variable resistance layer (104) disposed between the first electrode layer and the second electrode layer, wherei...
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JP2016171354A |
To provide a memory having a storage device which can perform reset by using a reset gate and has a resistance variable layer.A semiconductor device comprises: a columnar phase change layer 501; a reset gate insulation film 502 which sur...
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JP2016170848A |
To sufficiently increase a resistance or reduce a resistance while suppressing over-writing in writing to ReRAM.A semiconductor memory device comprises: a memory cell which includes a resistance change element; and a control circuit whic...
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JP5996324B2 |
To achieve a high-capacity, low-cost three-dimentional memory cell array having in a memory cell an element with uniform bidirectional rectification characteristics.A nonvolatile semiconductor memory device has a three-dimentional memory...
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JP2016167326A |
To stabilize a written state of a ReRAM.A semiconductor memory device has a memory cell including a resistance change element, and a control circuit capable of performing: Off-write processing for applying an Off-write pulse Pto the memo...
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JP2016167332A |
To provide a high-quality storage device.A storage device comprises: a plurality of first wires extending in a first direction and arrayed in a second direction different from the first direction; a plurality of second wires extending in...
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JP2016164938A |
To provide a phase change memory cell in which rewriting of data can be performed by low power consumption and which is large in recording density.A phase change memory cell includes: a lower electrode 3 formed on a substrate; a superlat...
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JP5984983B2 |
To provide a memory having a storage device which can perform reset by using a reset gate and has a resistance variable layer.A semiconductor device comprises: a columnar phase change layer 501; a reset gate insulation film 502 which sur...
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JP2016157864A |
To provide a resistance change memory element, with a low driving voltage and consumption power, in which manufacturing can be completed under room temperature and ambient pressure, containing an ultra-thin oxide film and a manufacturing...
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