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JP2019067947A |
To provide a semiconductor storage capable of reducing the chip area.A semiconductor storage includes a global bit line GBL extending in the horizontal direction, a selection transistor ST provided on the global bit line GBL, and having ...
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JP2019511803A |
The memory device and method are arranged between the first conductive electrode and the second conductive electrode, and are electrically connected to the first conductive electrode and the second conductive electrode. It includes a mat...
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JP6505619B2 |
According to one embodiment, a memory includes a resistance change layer includes a first chalcogenide layer, and a second chalcogenide layer having a composition different from that of the first chalcogenide layer which are stacked alte...
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JP6502799B2 |
To generate an output signal in a probability according to a specified value.A signal generator comprises a resistance change element, a voltage setting part, a pulse generation part, a reading part, and an output part. When an applied v...
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JP2019057642A |
To improve reliability.According to the embodiment, a semiconductor storage device is laminated above a semiconductor substrate and includes: a plurality of first electrode parts WLcomb having comb shapes to which one end parts of a plur...
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JP2019057544A |
To provide a storage element of which an ON-state current is large.The present invention provides a storage element including: a conductive first layer; a conductive second layer; and a third layer. The third layer is provided between th...
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JP2019057555A |
To provide a storage device which is easy in writing.A storage device includes: a first interlayer insulation film extending in a first direction; a second interlayer insulation film extending in the first direction; a first conductive l...
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JP2019057571A |
To provide a storage device capable of improving reliability.A storage device includes: a first conductive layer; a second conductive layer; and a resistance change layer provided between the first conductive layer and the second conduct...
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JP2019057582A |
To improve characteristics of a memory.A memory device comprises: a memory cell which includes a variable resistive element 100 and is connected between a word line and a bit line; and a control circuit which controls operation of the me...
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JP2019057554A |
To provide a storage device in which a contact resistance is reduced.A storage device comprises: a transistor part having a transistor; a plurality of interlayer insulation films provided to an upper direction of the transistor part; a p...
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JP2019057621A |
To provide a storage device that can realize stable operation.A storage device according to one embodiment comprises: a first conductive layer; a second conductive layer; a ferroelectric layer that is provided between the first conductiv...
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JP2019057661A |
To provide a semiconductor storage operating at high speed.A semiconductor storage includes multiple first electric wire lines, multiple second electric wire lines, a resistance change layer, multiple semiconductor layers, multiple gate ...
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JP2019057556A |
To provide a storage device having improved reliability.A storage device of an embodiment comprises: a first conductive layer extending in a first direction; a second conductive layer extending in the first direction; a third conductive ...
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JP2019057540A |
To provide a memory element capable of improving data retention characteristics.The memory element comprises a first conductive film including an ion source, a second conductive film and a first layer. The first layer provided between th...
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JP2019054173A |
To provide a storage device capable of improving reliability.A storage device according to an embodiment comprises: a first conductive layer extending in a first direction; a second conductive layer extending in a second direction crossi...
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JP2019054197A |
To provide a storage device capable of operating at higher speed.A storage device according to an embodiment includes a first and second resistance change elements. The first resistance change element includes a first terminal and second...
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JP2019053803A |
To provide technology to reduce writing time.In a control circuit 300, for each of element arrays 1, 1, among a plurality of resistance change elements 2 connected to one row, that is, one word line, only one resistance change element 2 ...
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JP2019054206A |
To provide a memory device capable of improving integration degree.A memory device includes multiple word lines laminated in a third direction orthogonal to a first direction and a second direction, multiple main bit lines including a fi...
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JP2019054208A |
To provide a storage device where a contact resistance is reduced.A storage device according to an embodiment includes: a wiring; an electrode including a first portion, which is provided on the wiring and is electrically connected to th...
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JP2019054060A |
To provide a semiconductor memory capable of reducing a chip area.A semiconductor memory according to an embodiment comprises a semiconductor substrate. A plurality of first wirings are provided on the semiconductor substrate, and a plur...
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JP2019054207A |
To provide a storage device that can be manufactured at low cost.The storage device includes: a first conductive layer; a second conductive layer; and a variable resistance layer including an organic compound, located between the first c...
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JP2019054200A |
To improve reliability of a memory.A memory of one embodiment includes: memory cells provided between a first bit line and a first word line and between a second bit line and a second word line; a first transistor provided between the fi...
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JP2019054171A |
To provide a storage device that enables a breakage position of a memory cell to be highly resistant.A storage device according to an embodiment comprises: a first conductive layer; a second conductive layer; a resistance change layer th...
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JP2019050353A |
To provide a semiconductor device in which a structure having a high aspect ratio can be provided, and a manufacturing method therefor.According to an embodiment, a manufacturing method for a semiconductor device includes: alternately fo...
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JP6489480B2 |
A nonvolatile storage device includes a first conductive layer disposed on a substrate, a contact plug including a conductive material and disposed on the first conductive layer, a variable resistance element covering the upper surface o...
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JP2019046953A |
To provide a storage device with high durability.The storage device includes: a crystal-containing layer containing a first metal and at least partially crystallized; and a germanium oxygen-containing layer containing germanium and oxyge...
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JP2019047003A |
To provide a semiconductor device with resistance change element of metal deposition type, capable of suppressing a voltage required for switch operation and its variations.The resistance change element includes: a resistance change film...
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JP6487090B1 |
To provide a resistance-changing non-volatile storage device having excellent performance. A non-volatile storage device according to an embodiment is provided on a first conductive portion 14, an insulating film 16 surrounding a side su...
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JP2019040658A |
To provide a semiconductor storage device which suppresses occurrence of stuck-off faults while suppressing an increase in circuit scale.In a semiconductor storage device according to one embodiment, a first pulse voltage is applied to a...
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JP6479480B2 |
To achieve a barrier layer and an electrode interface having extremely high flatness in a tunnel junction structure using a ferroelectric material for a barrier layer and provide a high performance nonvolatile memory operation in a nonvo...
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JP2019033327A |
To provide a semiconductor integrated circuit which enables low power consumption and high-speed writing and reading.A semiconductor integrated circuit has: first wires 12-12; second wires 16, 16crossing the first wires; third wires 16-1...
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JP2019028569A |
To utilize changes in inversion probability due to data write, for data storage.A memory system comprises: a non-volatile memory having a plurality of readable and writable memory cells; a write voltage control unit which controls at lea...
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JP6472773B2 |
The present disclosure generally relates to a structure, system, and method for manufacturing an electrical component for a memory device. For example, depositing alternating layers of conductive and insulator materials over an etch stop...
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JP6469215B2 |
An example memristor includes a first conductive layer, a switching layer, and a second conductive layer. The first conductive layer may include a first conductive material and a second conductive material. The second conductive material...
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JP2019021784A |
To provide a semiconductor storage device capable of operating a memory cell having a resistance change film at a suitable voltage and a manufacturing method thereof.A semiconductor storage according to an embodiment includes a first wir...
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JP2019016652A |
To provide a semiconductor device capable of enhancing a ratio of an ON-state current and an OFF-state current.A columnar semiconductor part 20 is arranged between one first wiring GBL and one second wiring BL, and connected with the fir...
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JP2019012711A |
To provide a nonvolatile memory element with low power consumption.In a nonvolatile memory with low power consumption, electrode layers 24 and 26 are arranged so as to sandwich a bismuth ferrite layer 22 from the direction perpendicular ...
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JP2019009415A |
To provide a memory device and a manufacturing method thereof.A memory device comprises a first conductive line, a second conductive line extending in a direction crossing the first conductive line, and a memory cell pillar connected to ...
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JP6448897B2 |
A semiconductor device, comprising: a plurality of memory cell strings; a bitline; and an interconnection coupling at least two of the memory cell strings to the bitline. Memory cell strings can be coupled to corresponding bitlines throu...
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JP6437351B2 |
According to one embodiment, a semiconductor memory device includes a plurality of first wirings, second wirings, a plurality of memory cells, selection gate transistors, and a third wiring. The first wirings are disposed in a first dire...
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JP6433439B2 |
In one embodiment of the present invention, a resistive switching device includes a first electrode disposed over a substrate and coupled to a first potential node, a switching layer disposed over the first electrode, a conductive amorph...
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JP6433860B2 |
According to one embodiment, a memory device includes a first electrode, a second electrode, a first layer, and a second layer. The first electrode includes a first element. The first layer is provided between the first electrode and the...
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JP6434719B2 |
A method of manufacturing a semiconductor device may include forming a material layer on a substrate, performing a selective oxidation process to form a capping oxide layer on a first surface of the material layer, wherein a second surfa...
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JP6428860B2 |
The present invention provides a non-volatile switching element that can be applied to a programmable-logic wiring changeover switch and in which an electrochemical reaction is used. Of the two electrodes for applying a bias voltage to t...
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JP6429184B2 |
To form a functional thin film of vanadium dioxide on a semiconductor substrate.In the present invention, a hexagonal aluminum nitride thin film formed at high temperature is used as a buffer thin film 13, and a functional thin film 16 c...
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JP6430306B2 |
According to one embodiment, a memory device includes a first conductive layer, a second conductive layer, a first insulating layer and a first layer. The first conductive layer includes a first metal capable of forming a compound with s...
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JP6430576B2 |
A resistive random access memory with superior area efficiency and higher reliability is provided. The resistive random access memory RRAM in the present invention includes a memory array, which includes a plurality of memory cells MC ar...
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JP2018182319A |
To provide a manufacturing method of a semiconductor device in which an integration degree is more improved.A three-dimensional semiconductor memory device and a manufacturing method are provided. The three-dimensional semiconductor memo...
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JP2018174333A |
To provide non-volatile memory with an adjustable cell bit shape.For recording one or more bits in at least one memory cell having a channel layer, a recording layer and a gate, a current is channeled from the channel layer into the reco...
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JP2018174227A |
To provide a method for manufacturing a variable-resistance element in a copper wiring layer, by which a foreign material like a particle can be removed while holding flatness of a copper surface used as an activation electrode.A method ...
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