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JP6420456B2 |
Various embodiments disclosed herein comprise methods and apparatuses for placing phase-change memory (PCM) cells of a memory array into a temperature regime where nucleation probability of the PCM cells is enhanced prior to applying a s...
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JP6419923B2 |
To perform image processing at high speed.An imaging element according to an embodiment comprises: first and second pixel cells; second wiring branched from first wiring at a first branch point and electrically connected with the first p...
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JP2018532280A |
The proposed device selectively provides a connection between a plurality of metallized layers, each of which has a plurality of conductive lines (601, 602, 603, 604), and the various conductive lines of the metallized layer. Correlated ...
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JP6415956B2 |
According to one embodiment, a semiconductor memory device includes a plurality of first wirings, a plurality of second wirings, a variable resistance layer, a first barrier insulating layer, and a second barrier insulating layer. The fi...
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JP6410095B2 |
A nonvolatile memory device includes an insulating layer, oxygen diffusion prevention layers disposed on the insulating layer, a plurality of contact plugs, each of the plurality of the contact plugs penetrating through each of the plura...
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JP6412949B2 |
The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, A memory device is provided, comprising:a substrate;a lower con...
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JP2018163718A |
To provide a storage device capable of increasing operation speed.A storage device includes: a first conductive layer WL1 extending in a first direction; a second conductive layer BL1 extending in a second direction crossing the first di...
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JP2018163971A |
To provide a storage which can stabilize characteristics of a memory cell.A storage comprises: first, second, third and fourth conductive layers WL11, WL12,WL21 and WL22 extending in a first direction x; a fifth conductive layer BL11 ext...
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JP2018163987A |
To provide a semiconductor memory device comprising resistance-change films with preferable characteristics.A semiconductor memory device according to one embodiment comprises a plurality of first wiring extending in a first direction an...
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JP2018163706A |
To provide a storage device capable of increasing operation speed.The application of a first voltage between a first conductive layer WL1 and a third conductive layer BL1 is started; after a first delay time has passed from the start of ...
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JP2018163969A |
To provide a storage device capable of improving reliability.A storage device according to an embodiment comprises a first conductive layer, a second conductive layer, and a resistance change layer provided between the first conductive l...
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JP2018164085A |
To provide a memory element including a variable resistance material layer.A memory element includes a variable resistance layer and a selective element layer positioned so as to be electrically connected to the variable resistance layer...
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JP2018163907A |
To provide a storage by which a mutual interference between memory cells can be kept down.A storage according to an embodiment hereof comprises: a first conductive layer extending in a first direction; a second conductive layer extending...
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JP2018160547A |
To provide a storage device in which an operation voltage is adjusted.A storage device according to one embodiment comprises: a first conductive layer; a second conductive layer; a first metal oxide layer being located between the first ...
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JP6401896B2 |
A resistive random access memory (ReRAM) (10) includes a first metal layer (18) having a first metal and a metal-oxide layer (22) on the first metal layer. The metal-oxide layer includes the first metal. The ReRAM further includes a seco...
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JP2018157114A |
To provide a storage device capable of stable operation.In an embodiment, a storage device includes first and second wiring and first and second layers. The first wiring includes a first region extending in a first direction and includin...
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JP2018157006A |
To provide a semiconductor storage capable of simplifying production process.Assuming a first direction, a second direction and a third direction, intersecting each other, a semiconductor storage includes a semiconductor substrate spread...
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JP2018157020A |
To provide a storage device capable of driving a memory cell with low electric power and a manufacturing method thereof.A storage device includes a first wiring extending in a first direction, a second wiring connected to the first wirin...
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JP2018157104A |
To provide a storage device capable of suppressing a leakage current between word lines connected to memory cells sharing a resistance change film.A storage device includes a plurality of word lines 10 extending in the Y direction, a loc...
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JP2018157068A |
To provide a storage device capable of suppressing a half selected leak current.The storage device includes: a first conductive layer; a second conductive layer; and a first metal oxide layer having a first region containing titanium oxi...
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JP2018157011A |
To provide a semiconductor storage device capable of achieving a multi-value cell system without increasing area penalties.A semiconductor storage device comprises: a plurality of global first wirings; a plurality of global second wiring...
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JP6398591B2 |
To provide a technology of improving reliability of an electronic device including a channel part containing a phase transition material.An electronic device 1 includes a channel part 30 and a light-emitting element 60. The channel part ...
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JP2018152497A |
To provide a resistance change element and a memory device capable of stable operation.A resistance change element includes a first conductive layer, a second conductive layer, a first layer and a second layer. The first conductive layer...
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JP2018152153A |
To provide a nonvolatile storage realizing a write operation with high reliability.A nonvolatile storage includes a first wiring layer 10, a second wiring layer 20, a metal ion source layer 30, a resistance change layer 40, and a control...
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JP2018148087A |
To provide a storage device capable of independently driving a memory cell with accuracy.A storage device comprises: a first wire line extending in a first direction; a plurality of second wire lines extending in a second direction cross...
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JP6391009B2 |
A resistive nonvolatile storage device includes a first interlayer insulating layer provided above a substrate, a contact hole penetrating through the first interlayer insulating layer, a contact layer wholly covering a bottom surface an...
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JP6388235B2 |
A data generating device includes: a memory cell array including a plurality of memory cells; a read circuit operative to obtain a plurality of resistance value information pieces from the plurality of memory cells; and a data generator ...
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JP6386349B2 |
According to one embodiment, a nonvolatile memory device includes a first metal layer, a second metal layer, a first layer, a second layer, and a third layer. The first metal layer contains at least one first metal selected from the grou...
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JP2018133410A |
To provide a storage device having highly reliable memory cells.A storage device includes: first wiring that extends in a first direction; second wiring that extends in a second direction intersecting the first direction and includes met...
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JP2018133436A |
To provide a storage device capable of properly performing an insulation test between wirings connected to a resistance-change memory cell in a low resistance state.A storage device includes: a first wiring extending in a first direction...
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JP6367035B2 |
To solve the following problem in which a conventional manufacturing technology for a tunnel resistance change type of nonvolatile memory element using a barrier layer of ferroelectric oxide has a difficulty in controlling the quality of...
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JP6367152B2 |
A storage device of an embodiment includes a first conductive layer containing a first element selected from the group consisting of Si, Ge, and a metal element, a second conductive layer including a first region containing a first metal...
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JP6364390B2 |
According to one embodiment, a memory device includes a conductive member and a stacked body provided on the conductive member. The stacked body includes a plurality of first interconnections being stacked to be separated from each other...
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JP6356486B2 |
To operate a resistance change memory using a ferroelectric more stably by expressing the electrical characteristics, resulting from the ferroelectricity, with a simpler structure.A resistance change memory 100 includes a ferroelectric l...
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JP6350525B2 |
To provide a switching element having excellent operational stability and a high production yield, and a semiconductor device using the switching element, a switching element according to this invention includes a non-volatile resistive-...
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JP6352980B2 |
Embodiments of the present disclosure generally relate to non-volatile memory and, in particular, non-volatile memory with adjustable cell bit shapes. In one embodiment, an adjustable memory cell is provided. The memory cell generally in...
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JP2018516447A |
To describe a resistance RAM (RRAM) device having increased uniformity and a related manufacturing method. Greater performance uniformity across the chip, including a larger number of RRAM cells, is achieved by uniformly forming improved...
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JP6344243B2 |
In switching elements each using a two-terminal-type variable resistance element, improper writing or any improper operation is often caused and the reliability of the switching elements cannot be improved easily. A switching element acc...
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JP2018092980A |
To provide a semiconductor integrated circuit capable of preventing program disturb from occurring.A semiconductor integrated circuit comprises: a plurality of first current limiting circuits provided corresponding to a plurality of firs...
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JP2018093095A |
To provide a memory device capable of independently driving a memory cell with high accuracy.A memory device includes first wiring that extends in a first direction, second wiring that extends in a second direction that crosses the first...
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JP6343040B2 |
Provided is a three-dimensional resistive memory (10) with selection transistors at different levels above a substrate (100), comprising a common channel pillar (114) with gate dielectric layer (108) and gate pillar (120), first and seco...
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JP2018085361A |
To provide a variable-resistance element and a storage device which can both operate with stability.According to an embodiment, the variable-resistance element comprises first and second conductive layers and a first layer. The first con...
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JP6335743B2 |
To provide a thin film forming apparatus with high mass productivity at a low cost.A functional element 27 of the present invention includes a functional thin film 16 formed by epitaxial growth of vanadium dioxide, the functional thin fi...
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JP6332691B2 |
A phase change memory cell includes a first circuit and a second circuit. The first circuit includes a first electrode, a carbon nanotube wire and a second electrode electrically connected in series; wherein the first circuit is adapted ...
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JP6333566B2 |
To provide a neuron operation element capable of achieving a series of neuron operations with a single element.A three-terminal structure is formed by arranging an input metal electrode in one, and arranging output electrodes 1 and 2 in ...
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JP6319553B2 |
To provide a resistance change element in which high resistance ratio window, endurance and a stable electrode having less resistance fluctuation are achieved.A resistance change element includes: a first electrode 11 and a second electr...
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JP2018064106A |
To provide a non-volatile storage device capable of suppressing voltage drop generated at the time of a switching operation, in a non-volatile storage device in which a resistance change element is connected with a selection transistor.A...
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JP6308136B2 |
There are provided a memory device and a memory unit that make it possible to improve retention property of a resistance value in low-current writing. The memory device of the technology includes a first electrode, a memory layer, and a ...
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JP6308795B2 |
To provide an iron oxide thin film mainly consisting of a maghemite crystal phase, and a method for manufacturing the same.The iron oxide thin film has a structure represented by a general formula FeMgO(where, 60≤x+y≤66, 0
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JP6306835B2 |
A method for the manufacture of a layer of material over a substrate, said method comprising the steps of a) providing a substrate, and b) depositing a layer of material on said substrate via ALD at a temperature of from 250 to 500°C, s...
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