To provide a ferroelectric memory which improves reliability and to provide a method of manufacturing the same.
The ferroelectric memory includes a substrate 10, a first insulating layer 12 formed above the substrate 10, a second insulating layer 14 formed above the first insulating layer 12, a contact hole 20 penetrating the first and second insulating layers 12 and 14, a plug 34 formed in the interior of the contact hole 20, and a barrier layer 36 above the plug 34, and a ferroelectric capacitor 40 formed by sequentially laminating a lower electrode 42, a ferroelectric layer 44 and an upper electrode 46 on the region including the upper part of the plug 34. The second insulating layer 14 has a property which is hard to be ground rather than the plug 34 and the first insulating layer 12.
MASUDA KAZUHIRO
FUKADA SHINICHI
Mitsue Obuchi